公开(公告)号：US07135720B2

公开(公告)日：2006-11-14

申请号：US10913297

申请日：2004-08-05

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

公开(公告)号：US20100019850A1

公开(公告)日：2010-01-28

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, JR. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H03F3/16 ,  H01L29/20

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07994540B2

公开(公告)日：2011-08-09

申请号：US12508871

申请日：2009-07-24

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook, Jr. ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L31/0328

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US20080246058A1

公开(公告)日：2008-10-09

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry W. Johnson ,  Kevin J. Linthicum ,  Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Sameer Singhal ,  Robert J. Therrien ,  Andrei Vescan

IPC分类号： H01L29/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07569871B2

公开(公告)日：2009-08-04

申请号：US12059182

申请日：2008-03-31

申请人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

发明人： Walter H. Nagy ,  Jerry Wayne Johnson ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Kevin J. Linthicum

IPC分类号： H01L31/072

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07352016B2

公开(公告)日：2008-04-01

申请号：US11598551

申请日：2006-11-13

申请人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

发明人： Walter H. Nagy ,  Ricardo M. Borges ,  Jeffrey D. Brown ,  Apurva D. Chaudhari ,  James W. Cook ,  Allen W. Hanson ,  Jerry Wayne Johnson ,  Kevin J. Linthicum ,  Edwin Lanier Piner ,  Pradeep Rajagopal ,  John Claassen Roberts ,  Sameer Singhal ,  Robert Joseph Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。

公开(公告)号：US07365374B2

公开(公告)日：2008-04-29

申请号：US11121793

申请日：2005-05-03

申请人： Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Kevin J. Linthicum

发明人： Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Kevin J. Linthicum

IPC分类号： H01L31/0328

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.

摘要翻译： 提供了氮化镓材料基半导体结构。 在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。 氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。 应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时​​减少整个结构的翘曲。 氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

公开(公告)号：US07791106B2

公开(公告)日：2010-09-07

申请号：US12024313

申请日：2008-02-01

申请人： Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Kevin J. Linthicum

发明人： Edwin L. Piner ,  Pradeep Rajagopal ,  John C. Roberts ,  Kevin J. Linthicum

IPC分类号： H01L29/06

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02513 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7783

摘要： Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.

摘要翻译： 提供了氮化镓材料基半导体结构。 在一些实施例中，结构包括复合衬底，氮化镓材料区域形成在复合衬底上。 氮化镓材料结构可以包括另外的特征，例如应变吸收层和/或过渡层，其也促进有利的应力条件。 应力的降低可以减少氮化镓材料区域中的缺陷形成和开裂，同时​​减少整个结构的翘曲。 氮化镓材料基半导体结构可用于诸如晶体管（例如FET）肖特基二极管，发光二极管，激光二极管，SAW器件和传感器等各种应用中。

公开(公告)号：US07247889B2

公开(公告)日：2007-07-24

申请号：US11004628

申请日：2004-12-03

申请人： Allen W. Hanson ,  John Claassen Roberts ,  Edwin L. Piner ,  Pradeep Rajagopal

发明人： Allen W. Hanson ,  John Claassen Roberts ,  Edwin L. Piner ,  Pradeep Rajagopal

IPC分类号： H01L31/00 ,  H01L21/28

CPC分类号： H01L29/267 ,  H01L29/2003 ,  H01L29/7787

摘要： III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

摘要翻译： 描述了包括硅衬底的III族氮化物材料结构以及与其相关的方法。 结构中的寄生损失可能会显着降低，这反映在性能改进中。 由本发明的结构形成的器件（例如RF器件）可以具有更高的输出功率，功率增益和效率等优点。

公开(公告)号：US20070120147A1

公开(公告)日：2007-05-31

申请号：US11598551

申请日：2006-11-13

申请人： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

发明人： Walter Nagy ,  Ricardo Borges ,  Jeffrey Brown ,  Apurva Chaudhari ,  James Cook ,  Allen Hanson ,  Jerry Johnson ,  Kevin Linthicum ,  Edwin Piner ,  Pradeep Rajagopal ,  John Roberts ,  Sameer Singhal ,  Robert Therrien ,  Andrei Vescan

IPC分类号： H01L31/00

CPC分类号： H01L29/812 ,  H01L29/2003 ,  H01L29/7787

摘要： Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

摘要翻译： 提供了氮化镓材料晶体管和与之相关的方法。 晶体管可以通过放大输入信号来产生具有增加的功率的输出信号在功率应用中使用。 晶体管可以设计成在特定传输信道（以频率定义）的情况下传输大部分输出信号，同时最小化相邻信道中的传输。 这种能力使晶体管具有良好的线性度，导致高信号质量并限制了传输数据中的误差。 晶体管可以设计成实现低ACPR值（优良线性度量），同时仍然以高漏电效率和/或高输出功率工作。 这种特性使晶体管能够用于包括基于W-CDMA调制的第三代（3G）功率应用的射频功率应用中。