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公开(公告)号：US20120298624A1
公开(公告)日：2012-11-29
申请号：US13418003
申请日：2012-03-12
申请人： Thomas Cowan , Steven Malekos , Grant Korgan , Jesse Adams , Yasuhiko Sentoku , Nathalie Le Galloudec , Julien Fuchs
发明人： Thomas Cowan , Steven Malekos , Grant Korgan , Jesse Adams , Yasuhiko Sentoku , Nathalie Le Galloudec , Julien Fuchs
IPC分类号： B44C1/22
CPC分类号： H05H1/24 , G21B1/19 , H01J35/08 , H05G2/00 , H05G2/001 , H05G2/008 , H05H1/02 , Y02E30/16 , Y10T428/12 , Y10T428/12299 , Y10T428/1241 , Y10T428/12493 , Y10T428/12806 , Y10T428/12868 , Y10T428/12889 , Y10T428/13
摘要： In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about 1 μm. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.
摘要翻译： 在具体实施方案中，本公开提供了包括金属层并限定中空内表面的靶。 中空的内表面具有内部顶点。 内部顶点的至少两个相对点之间的距离小于约15μm。 在具体示例中，该距离小于约1μm。 目标的具体实现是独立的。 目标具有许多公开的形状，包括锥体，金字塔，半球和封盖结构。 本公开还提供了这样的靶的阵列。 还提供了使用光刻技术（诸如光刻技术）形成靶的方法，例如所公开的靶。 在具体实例中，目标模具由硅晶片形成，然后模具的一侧或多侧涂覆有目标材料，例如一种或多种金属。
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2.发明申请公开(公告)号：US20110316270A1
公开(公告)日：2011-12-29
申请号：US13226132
申请日：2011-09-06
申请人： Jesse Adams , Steven Malekos , Grant Korgan , Al Brandano
发明人： Jesse Adams , Steven Malekos , Grant Korgan , Al Brandano
CPC分类号： B42D25/328 , A44C15/004 , B42D2035/08 , B42D2035/24 , B42D2035/44 , B44C1/227 , Y10S283/901
摘要： Described herein are various embodiments of imagery or items comprising imagery using semiconductor processing or fabrication techniques and methods of using such techniques to make imagery. For example, according to one embodiment, a method of making imagery having nano-scale or micro-scale portions can include providing a silicon wafer, coating the silicon wafer with a layer of oxide, depositing a layer of photoresist onto the oxide layer, and removing a patterned portion of the photoresist to expose a patterned portion of the oxide layer. The method can also include removing at least some of the patterned portion of the oxide such that the patterned portion of the oxide layer has a predetermined thickness resulting in a predetermined viewable color. The patterned portion of the oxide layer can define at least one of the nano-scale or micro-scale portions.
摘要翻译： 这里描述的是包括使用半导体处理的图像或制造技术的图像或物品的各种实施例以及使用这些技术来制作图像的方法。 例如，根据一个实施例，制造具有纳米尺度或微尺度部分的图像的方法可以包括提供硅晶片，用氧化层涂覆硅晶片，在氧化物层上沉积光致抗蚀剂层，以及 去除光致抗蚀剂的图案部分以暴露氧化物层的图案化部分。 该方法还可以包括去除氧化物的图案化部分中的至少一些，使得氧化物层的图案化部分具有预定的厚度，从而获得预定的可见颜色。 氧化物层的图案化部分可以限定纳米尺度或微尺度部分中的至少一个。
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3.发明申请公开(公告)号：US20080054624A1
公开(公告)日：2008-03-06
申请号：US11850607
申请日：2007-09-05
申请人： Jesse Adams , Steve Malekos , Grant Korgan , Al Brandano
发明人： Jesse Adams , Steve Malekos , Grant Korgan , Al Brandano
CPC分类号： B42D25/328 , A44C15/004 , B42D2035/08 , B42D2035/24 , B42D2035/44 , B44C1/227 , Y10S283/901
摘要： Described herein are various embodiments of imagery or items comprising imagery using semiconductor processing or fabrication techniques and methods of using such techniques to make imagery. For example, according to one embodiment, a method of making imagery having nano-scale or micro-scale portions can include providing a silicon wafer, coating the silicon wafer with a layer of oxide, depositing a layer of photoresist onto the oxide layer, and removing a patterned portion of the photoresist to expose a patterned portion of the oxide layer. The method can also include removing at least some of the patterned portion of the oxide such that the patterned portion of the oxide layer has a predetermined thickness resulting in a predetermined viewable color. The patterned portion of the oxide layer can define at least one of the nano-scale or micro-scale portions.
摘要翻译： 这里描述的是包括使用半导体处理的图像或制造技术的图像或物品的各种实施例以及使用这些技术来制作图像的方法。 例如，根据一个实施例，制造具有纳米尺度或微尺度部分的图像的方法可以包括提供硅晶片，用氧化层涂覆硅晶片，在氧化物层上沉积光致抗蚀剂层，以及 去除光致抗蚀剂的图案部分以暴露氧化物层的图案化部分。 该方法还可以包括去除氧化物的图案化部分中的至少一些，使得氧化物层的图案化部分具有预定的厚度，从而获得预定的可见颜色。 氧化物层的图案化部分可以限定纳米尺度或微尺度部分中的至少一个。
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公开(公告)号：US20100028707A1
公开(公告)日：2010-02-04
申请号：US12066479
申请日：2006-09-12
申请人： Thomas E. Cowan , Steven Malekos , Grant Korgan , Jesse Adams , Yasuhiko Sentoku , Nathalie Le Galloudec , Julien Fuchs
发明人： Thomas E. Cowan , Steven Malekos , Grant Korgan , Jesse Adams , Yasuhiko Sentoku , Nathalie Le Galloudec , Julien Fuchs
CPC分类号： H05H1/24 , G21B1/19 , H01J35/08 , H05G2/00 , H05G2/001 , H05G2/008 , H05H1/02 , Y02E30/16 , Y10T428/12 , Y10T428/12299 , Y10T428/1241 , Y10T428/12493 , Y10T428/12806 , Y10T428/12868 , Y10T428/12889 , Y10T428/13
摘要： In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about lam. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.
摘要翻译： 在具体实施方案中，本公开提供了包括金属层并限定中空内表面的靶。 中空的内表面具有内部顶点。 内部顶点的至少两个相对的点之间的距离小于约15μm。 在具体示例中，距离小于约lam。 目标的具体实现是独立的。 目标具有许多公开的形状，包括锥体，金字塔，半球和封盖结构。 本公开还提供了这样的靶的阵列。 还提供了使用光刻技术（诸如光刻技术）形成靶的方法，例如所公开的靶。 在具体实例中，目标模具由硅晶片形成，然后模具的一侧或多侧涂覆有目标材料，例如一种或多种金属。
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公开(公告)号：USD552748S1
公开(公告)日：2007-10-09
申请号：US29249853
申请日：2006-10-24
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6.发明申请公开(公告)号：US20050009197A1
公开(公告)日：2005-01-13
申请号：US10777282
申请日：2004-02-10
申请人： Jesse Adams , Benjamin Rogers
发明人： Jesse Adams , Benjamin Rogers
摘要： The invention provides a method of detecting a chemical species with an oscillating cantilevered probe. A cantilevered beam is driven into oscillation with a drive mechanism coupled to the cantilevered beam. A free end of the oscillating cantilevered beam is tapped against a mechanical stop coupled to a base end of the cantilevered beam. An amplitude of the oscillating cantilevered beam is measured with a sense mechanism coupled to the cantilevered beam. A treated portion of the cantilevered beam is exposed to the chemical species, wherein the cantilevered beam bends when exposed to the chemical species. A second amplitude of the oscillating cantilevered beam is measured, and the chemical species is determined based on the measured amplitudes.
摘要翻译： 本发明提供了用振荡悬臂式探针检测化学物质的方法。 悬臂梁被驱动到与悬臂梁相连的驱动机构的振荡中。 摆动悬臂梁的自由端与一个连接到悬臂梁基端的机械止动件相通。 用耦合到悬臂梁的感测机构测量振荡悬臂梁的振幅。 悬臂梁的处理部分暴露于化学物质，其中当暴露于化学物质时，悬臂梁弯曲。 测量振荡悬臂梁的第二幅度，并根据测得的振幅确定化学物质。
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公开(公告)号：US08229075B2
公开(公告)日：2012-07-24
申请号：US12066479
申请日：2006-09-12
申请人： Thomas Cowan , Steven Malekos , Grant Korgan , Jesse Adams , Yasuhiko Sentoku , Nathalie Le Galloudec , Julien Fuchs
发明人： Thomas Cowan , Steven Malekos , Grant Korgan , Jesse Adams , Yasuhiko Sentoku , Nathalie Le Galloudec , Julien Fuchs
CPC分类号： H05H1/24 , G21B1/19 , H01J35/08 , H05G2/00 , H05G2/001 , H05G2/008 , H05H1/02 , Y02E30/16 , Y10T428/12 , Y10T428/12299 , Y10T428/1241 , Y10T428/12493 , Y10T428/12806 , Y10T428/12868 , Y10T428/12889 , Y10T428/13
摘要： In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about 1 μm. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.
摘要翻译： 在具体实施方案中，本公开提供了包括金属层并限定中空内表面的靶。 中空的内表面具有内部顶点。 内部顶点的至少两个相对点之间的距离小于约15μm。 在具体示例中，该距离小于约1μm。 目标的具体实现是独立的。 目标具有许多公开的形状，包括锥体，金字塔，半球和封盖结构。 本公开还提供了这样的靶的阵列。 还提供了使用光刻技术（诸如光刻技术）形成靶的方法，例如所公开的靶。 在具体实例中，目标模具由硅晶片形成，然后模具的一侧或多侧涂覆有目标材料，例如一种或多种金属。
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8.发明授权公开(公告)号：US08011697B2
公开(公告)日：2011-09-06
申请号：US11850607
申请日：2007-09-05
申请人： Jesse Adams , Steven Malekos , Grant Korgan , Al Brandano
发明人： Jesse Adams , Steven Malekos , Grant Korgan , Al Brandano
CPC分类号： B42D25/328 , A44C15/004 , B42D2035/08 , B42D2035/24 , B42D2035/44 , B44C1/227 , Y10S283/901
摘要： Described herein are various embodiments of imagery or items comprising imagery using semiconductor processing or fabrication techniques and methods of using such techniques to make imagery. For example, according to one embodiment, a method of making imagery having nano-scale or micro-scale portions can include providing a silicon wafer, coating the silicon wafer with a layer of oxide, depositing a layer of photoresist onto the oxide layer, and removing a patterned portion of the photoresist to expose a patterned portion of the oxide layer. The method can also include removing at least some of the patterned portion of the oxide such that the patterned portion of the oxide layer has a predetermined thickness resulting in a predetermined viewable color. The patterned portion of the oxide layer can define at least one of the nano-scale or micro-scale portions.
摘要翻译： 这里描述的是包括使用半导体处理的图像或制造技术的图像或物品的各种实施例以及使用这些技术来制作图像的方法。 例如，根据一个实施例，制造具有纳米尺度或微尺度部分的图像的方法可以包括提供硅晶片，用氧化层涂覆硅晶片，在氧化物层上沉积光致抗蚀剂层，以及 去除光致抗蚀剂的图案部分以暴露氧化物层的图案化部分。 该方法还可以包括去除氧化物的图案化部分中的至少一些，使得氧化物层的图案化部分具有预定的厚度，从而获得预定的可见颜色。 氧化物层的图案化部分可以限定纳米尺度或微尺度部分中的至少一个。
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公开(公告)号：USD557805S1
公开(公告)日：2007-12-18
申请号：US29249858
申请日：2006-10-24
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公开(公告)号：USD552750S1
公开(公告)日：2007-10-09
申请号：US29249856
申请日：2006-10-24
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