公开(公告)号：US20130104972A1

公开(公告)日：2013-05-02

申请号：US13563915

申请日：2012-08-01

申请人： Jeung Hyun JEONG ,  Ju Heon YOON ,  Won Mok KIM ,  Young Joon BAIK ,  Jong Keuk PARK

发明人： Jeung Hyun JEONG ,  Ju Heon YOON ,  Won Mok KIM ,  Young Joon BAIK ,  Jong Keuk PARK

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： Provided is a Se- or S-based thin film solar cell, including a substrate, a rear electrode formed on the substrate, a light absorbing layer formed on the rear electrode and containing at least one of selenium (Se) and sulfur (S), and an rear electrode top layer. The rear electrode top layer is formed between the rear electrode and the light absorbing layer, and contains a large amount of oxygen (O) to control diffusion of sodium (Na) through the rear electrode to the light absorbing layer. In this manner, it is possible to improve the electrical conductivity and interfacial adhesion of the rear electrode while stimulating diffusion of sodium (Na) to improve the efficiency of a thin film solar cell.

摘要翻译： 提供了一种基于S或S的薄膜太阳能电池，其包括基板，形成在基板上的后电极，形成在后电极上并含有硒（Se）和硫（S）中的至少一种的光吸收层， ，和后电极顶层。 后电极顶层形成在后电极和光吸收层之间，并且含有大量的氧（O），以控制通过后电极将钠（Na）扩散到光吸收层。 以这种方式，可以改善后电极的导电性和界面粘合性，同时刺激钠（Na）的扩散以提高薄膜太阳能电池的效率。

公开(公告)号：US20150091041A1

公开(公告)日：2015-04-02

申请号：US14454559

申请日：2014-08-07

申请人： Ju Heon YOON ,  Myeong Ha KIM ,  Chan Mook LIM ,  Joon Woo JEON ,  Jin Young CHOI

发明人： Ju Heon YOON ,  Myeong Ha KIM ,  Chan Mook LIM ,  Joon Woo JEON ,  Jin Young CHOI

IPC分类号： H01L27/15 ,  H01L33/38

CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.

摘要翻译： 半导体发光器件包括衬底，第一结构，第二结构，第一和第二n电极以及第一和第二p电极。 第一结构设置在基板上，并且包括第一n型半导体层，第一有源层和第一p型半导体层。 第二结构与衬底上的第一结构间隔开，并且包括第二n型半导体层，第二有源层和第二p型半导体层。 第一n电极和第一p电极分别连接到第一n型半导体层和第一p型半导体层。 第二n电极和第二p电极分别连接到第二n型半导体层和第二p型半导体层。 第二n电极与第二有源层间隔开以包围第二有源层。

公开(公告)号：US20150207051A1

公开(公告)日：2015-07-23

申请号：US14601190

申请日：2015-01-20

申请人： Ju Heon YOON ,  Joon Woo JEON ,  Dong Hyuk JOO ,  Jin Young CHOI

发明人： Ju Heon YOON ,  Joon Woo JEON ,  Dong Hyuk JOO ,  Jin Young CHOI

IPC分类号： H01L33/62

CPC分类号： H01L33/14 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/10155

摘要： A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.

摘要翻译： 半导体发光器件包括堆叠半导体结构，其包括具有分为第一区域和第二区域的顶表面的第一导电类型半导体层以及顺序地设置在第二区域上的有源层和第二导电类型半导体层 的第一导电型半导体层。 第一和第二接触电极分别设置在第一导电型半导体层和第二导电类型半导体层的第一区域中。 电流扩散层设置在第二接触电极上，并且包括具有第一电阻率的第一导电层和具有小于第一电阻率的第二电阻率的第二导电层。

公开(公告)号：US20150162376A1

公开(公告)日：2015-06-11

申请号：US14454742

申请日：2014-08-08

申请人： Ju Heon YOON ,  Myeong Ha KIM

发明人： Ju Heon YOON ,  Myeong Ha KIM

IPC分类号： H01L27/15 ,  H01L33/36

CPC分类号： H01L27/15 ,  H01L33/38 ,  H01L2224/48247 ,  H01L2224/48257

摘要： A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.

摘要翻译： 一种半导体发光器件，包括：衬底; 发光结构和齐纳二极管结构，其被设置为在所述衬底上彼此间隔开，并且分别包括第一半导体层和第二半导体层; 以及与发光结构的第一半导体层和齐纳二极管结构的第二半导体层电连接的共同的，整体形成的电极。 由齐纳二极管结构形成的齐纳二极管的至少一部分设置在公共电极的下方。