公开(公告)号：US20090084406A1

公开(公告)日：2009-04-02

申请号：US12214658

申请日：2008-06-20

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/06 ,  B08B7/04

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US07968507B2

公开(公告)日：2011-06-28

申请号：US12214658

申请日：2008-06-20

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/06

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US08163095B2

公开(公告)日：2012-04-24

申请号：US13101973

申请日：2011-05-05

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/50

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US20070278487A1

公开(公告)日：2007-12-06

申请号：US11706012

申请日：2007-02-12

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和薄膜晶体管基板的制造方法包括形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US08158470B2

公开(公告)日：2012-04-17

申请号：US13018309

申请日：2011-01-31

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，其中栅极绝缘层相互插入并限定基板上的像素区域，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US07901965B2

公开(公告)日：2011-03-08

申请号：US11706012

申请日：2007-02-12

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交;薄膜晶体管，电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。