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1.发明授权Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same 有权用于剥离光刻胶的组合物和使用其制造薄晶体管阵列面板的方法公开(公告)号：US07553710B2
公开(公告)日：2009-06-30
申请号：US11873791
申请日：2007-10-17
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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公开(公告)号：US20110206829A1
公开(公告)日：2011-08-25
申请号：US13101973
申请日：2011-05-05
申请人： Ji Sun LEE , Hong Sick PARK , Jong Hyun CHOUNG , Sun Young HONG , Bong Kyun KIM , Byeong Jin LEE , Byung Uk KIM , Jong Hyun JEONG , Suk Il YOON , Seong Bae KIM , Sung Gun SHIN , Soon Beom HUH , Se Hwan JUNG , Doo Young JANG
发明人： Ji Sun LEE , Hong Sick PARK , Jong Hyun CHOUNG , Sun Young HONG , Bong Kyun KIM , Byeong Jin LEE , Byung Uk KIM , Jong Hyun JEONG , Suk Il YOON , Seong Bae KIM , Sung Gun SHIN , Soon Beom HUH , Se Hwan JUNG , Doo Young JANG
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。
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3.发明授权Composition for photoresist stripper and method of fabricating thin film transistor array substrate 有权用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法公开(公告)号：US07956393B2
公开(公告)日：2011-06-07
申请号：US12564019
申请日：2009-09-21
申请人： Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
发明人： Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： G03F7/425 , H01L27/124 , H01L27/1288
摘要： A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
摘要翻译： 根据一个或多个实施方案提供了用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法。 在一个或多个实施方案中，组合物包含约5-30重量％的链胺化合物，约0.5-10重量％的环胺化合物，约10-80重量％的二醇醚化合物，约5-30重量％ ％的蒸馏水和约0.1-5重量％的腐蚀抑制剂。
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4.发明申请COMPOSITION FOR REMOVING PHOTORESIST AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME 有权用于去除光电元件的组合物和使用其制造阵列基板的方法公开(公告)号：US20090170037A1
公开(公告)日：2009-07-02
申请号：US12323649
申请日：2008-11-26
申请人： Jong-Hyun CHOUNG , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
发明人： Jong-Hyun CHOUNG , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
CPC分类号： G03F7/425
摘要： A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.
摘要翻译： 用于除去光致抗蚀剂的组合物包括a）具有环胺和/或二胺的胺化合物，b）二醇醚化合物，c）缓蚀剂和d）极性溶剂。 组合物还包括剥离促进剂。 进一步公开了使用除去光致抗蚀剂的组合物制造阵列基板的方法。
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5.发明申请COMPOSITION FOR STRIPPING PHOTORESIST AND METHOD FOR MANUFACTURING THIN TRANSISTOR ARRAY PANEL USING THE SAME 有权用于剥离光刻胶的组合物和使用其制造薄膜晶体管阵列的方法公开(公告)号：US20080032432A1
公开(公告)日：2008-02-07
申请号：US11873791
申请日：2007-10-17
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： H01L21/311
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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6.发明申请Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same 有权用于剥离光刻胶的组合物和使用其制造薄晶体管阵列面板的方法公开(公告)号：US20060204896A1
公开(公告)日：2006-09-14
申请号：US11217400
申请日：2005-09-02
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper comprising about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译： 本发明提供一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％ ％至约6重量％的螯合剂。
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7.发明授权公开(公告)号：US08084184B2
公开(公告)日：2011-12-27
申请号：US12323649
申请日：2008-11-26
申请人： Jong-Hyun Choung , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
发明人： Jong-Hyun Choung , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
CPC分类号： G03F7/425
摘要： A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.
摘要翻译： 用于除去光致抗蚀剂的组合物包括a）具有环胺和/或二胺的胺化合物，b）二醇醚化合物，c）缓蚀剂和d）极性溶剂。 组合物还包括剥离促进剂。 进一步公开了使用除去光致抗蚀剂的组合物制造阵列基板的方法。
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8.发明申请COMPOSITION FOR PHOTORESIST STRIPPER AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权光电子剥离器的组合物和制造薄膜晶体管阵列基板的方法公开(公告)号：US20100151610A1
公开(公告)日：2010-06-17
申请号：US12564019
申请日：2009-09-21
申请人： Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Sun-Young HONG , Young-Joo CHOI , Byeong-Jin LEE , Nam-Seok SUH , Byung-Uk KIM , Suk-Il YOON , Jong-Hyun JEONG , Sung-Gun SHIN , Soon-Beom HUH , Se-Hwan JUNG , Doo-Young JANG , Sun-Joo PARK , Oh-Hwan KWEON
发明人： Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Sun-Young HONG , Young-Joo CHOI , Byeong-Jin LEE , Nam-Seok SUH , Byung-Uk KIM , Suk-Il YOON , Jong-Hyun JEONG , Sung-Gun SHIN , Soon-Beom HUH , Se-Hwan JUNG , Doo-Young JANG , Sun-Joo PARK , Oh-Hwan KWEON
CPC分类号： G03F7/425 , H01L27/124 , H01L27/1288
摘要： A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
摘要翻译： 根据一个或多个实施方案提供了用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法。 在一个或多个实施方案中，组合物包含约5-30重量％的链胺化合物，约0.5-10重量％的环胺化合物，约10-80重量％的二醇醚化合物，约5-30重量％ ％的蒸馏水和约0.1-5重量％的腐蚀抑制剂。
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公开(公告)号：US20090084406A1
公开(公告)日：2009-04-02
申请号：US12214658
申请日：2008-06-20
申请人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
发明人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。
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公开(公告)号：US20080085850A1
公开(公告)日：2008-04-10
申请号：US11865795
申请日：2007-10-02
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
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