公开(公告)号：US20080293222A1

公开(公告)日：2008-11-27

申请号：US12179576

申请日：2008-07-24

申请人： Jih-Shun Chiang ,  Hung-Lin Shih ,  Li-Yuen Tang ,  Tian-Fu Chiang ,  Ming-Chi Fan ,  Chin-I Liao ,  Chin-Cheng Chien

发明人： Jih-Shun Chiang ,  Hung-Lin Shih ,  Li-Yuen Tang ,  Tian-Fu Chiang ,  Ming-Chi Fan ,  Chin-I Liao ,  Chin-Cheng Chien

IPC分类号： H01L21/205

CPC分类号： H01L29/66636 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/6656 ,  H01L29/66628

摘要： A method for forming a SiGe epitaxial layer is described. A first SEG process is performed under a first condition, consuming about 1% to 20% of the total process time for forming the SiGe epitaxial layer. Then, a second SEG process is performed under a second condition, consuming about 99% to 80% of the total process time. The first condition and the second condition include different temperatures or pressures. The first and the second SEG processes each uses a reactant gas that includes at least a Si-containing gas and a Ge-containing gas.

摘要翻译： 描述了形成SiGe外延层的方法。 在第一条件下执行第一SEG工艺，消耗用于形成SiGe外延层的总工艺时间的约1％至20％。 然后，在第二条件下执行第二SEG处理，消耗总处理时间的约99％至80％。 第一个条件和第二个条件包括不同的温度或压力。 第一和第二SEG方法各自使用至少包含含Si气体和含Ge气体的反应气体。

公开(公告)号：US20080076236A1

公开(公告)日：2008-03-27

申请号：US11309739

申请日：2006-09-21

申请人： Jih-Shun Chiang ,  Hung-Lin Shih ,  Li-Yuen Tang ,  Tian-Fu Chiang ,  Ming-Chi Fan ,  Chin-I Liao ,  Chin-Cheng Chien

发明人： Jih-Shun Chiang ,  Hung-Lin Shih ,  Li-Yuen Tang ,  Tian-Fu Chiang ,  Ming-Chi Fan ,  Chin-I Liao ,  Chin-Cheng Chien

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L21/36

CPC分类号： H01L29/66636 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/6656 ,  H01L29/66628

摘要： A method for forming a SiGe epitaxial layer is described. A first SEG process is performed under a first condition, consuming about 1% to 20% of the total process time for forming the SiGe epitaxial layer. Then, a second SEG process is performed under a second condition, consuming about 99% to 80% of the total process time. The first condition and the second condition include different temperatures or pressures. The first and the second SEG processes each uses a reactant gas that includes at least a Si-containing gas and a Ge-containing gas.

公开(公告)号：US20100317182A1

公开(公告)日：2010-12-16

申请号：US12862799

申请日：2010-08-25

申请人： Tian-Fu Chiang ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Chih-Hao Yu ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Tian-Fu Chiang ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Chih-Hao Yu ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L21/8234

CPC分类号： H01L29/517 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66545

摘要： A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the gate electrode of the second MOS, wherein the first MOS includes a first high-K material and a first metal for use in a first gate, and a second MOS includes a second high-K material and a second metal for use in a second gate. Then the first gate and the second gate are partially removed to form a connecting recess. Afterwards, the connecting recess is filled with a conductive material to form a bridge channel for electrically connecting the first metal and the second metal.

摘要翻译： 提供一种形成半导体元件结构的方法。 首先，提供包括第一MOS和第二MOS的基板。 第一MOS的栅电极连接到第二MOS的栅电极，其中第一MOS包括第一高K材料和用于第一栅极的第一金属，第二MOS包括第二高K 材料和用于第二栅极的第二金属。 然后，第一栅极和第二栅极被部分地去除以形成连接凹部。 之后，用导电材料填充连接凹部，以形成用于电连接第一金属和第二金属的桥接通道。

公开(公告)号：US08816439B2

公开(公告)日：2014-08-26

申请号：US12907036

申请日：2010-10-19

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L29/76 ,  H01L27/11

CPC分类号： H01L27/11

摘要： A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.

摘要翻译： 半导体器件的栅极结构包括第一低电阻导电层，第二低电阻导电层和设置在第一低电阻导电层和第二低电阻导电层的侧壁之间且直接接触的第一类型导电层。

公开(公告)号：US07799630B2

公开(公告)日：2010-09-21

申请号：US12018214

申请日：2008-01-23

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ting Lin ,  Che-Hua Hsu ,  Guang-Hwa Ma

IPC分类号： H01L21/8238

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

摘要： A method for manufacturing a CMOS device having dual metal gate includes providing a substrate having at least two transistors of different conductive types and a dielectric layer covering the two transistors, planarizing the dielectric layer to expose gate conductive layers of the two transistors, forming a patterned blocking layer exposing one of the conductive type transistor, performing a first etching process to remove a portion of a gate of the conductive type transistor, reforming a metal gate, removing the patterned blocking layer, performing a second etching process to remove a portion of a gate of the other conductive type transistor, and reforming a metal gate.

摘要翻译： 一种用于制造具有双金属栅极的CMOS器件的方法包括：提供具有不同导电类型的至少两个晶体管的衬底和覆盖两个晶体管的电介质层，平坦化介电层以暴露两个晶体管的栅极导电层，形成图案化 阻挡层暴露导电型晶体管之一，执行第一蚀刻工艺以去除导电型晶体管的栅极的一部分，重整金属栅极，去除图案化阻挡层，执行第二蚀刻工艺以去除部分 另一导电型晶体管的栅极，以及金属栅极的重整。

公开(公告)号：US20100059833A1

公开(公告)日：2010-03-11

申请号：US12208352

申请日：2008-09-11

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Cheng-Hsien Chou ,  Tian-Fu Chiang ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Cheng-Hsien Chou ,  Tian-Fu Chiang ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L47/00 ,  H01L21/8236

CPC分类号： H01L29/6656 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.

摘要翻译： 公开了一种用于制造金属栅极晶体管的方法。 首先，提供具有第一晶体管区域和第二晶体管区域的衬底。 接下来，在基板上形成层叠膜，其中层叠膜包括至少一个高k电介质层和第一金属层。 图案化层叠的膜以在第一晶体管区域和第二晶体管区域中形成多个栅极，在栅极上形成电介质层，并且介电层的一部分被平坦化，直到到达每个栅极的顶部。 第一金属层从第二晶体管区域的栅极去除，并且第二金属层形成在电介质层的表面上，每个栅极用于在第一晶体管区域和第二晶体管区域中形成多个金属栅极。

公开(公告)号：US20090242997A1

公开(公告)日：2009-10-01

申请号：US12058208

申请日：2008-03-28

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L27/11

摘要： A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

摘要翻译： 公开了一种制造半导体结构的方法。 提供具有第一晶体管的衬底，其具有第一虚拟栅极和具有第二虚拟栅极的第二晶体管。 第一晶体管和第二晶体管的导电类型不同。 同时去除第一和第二伪栅极以形成相应的第一和第二开口。 在基板上形成高k电介质层，第二导电层和第一低电阻导电层，并填充第一和第二开口，第一低电阻导电层填充第二开口。 第一开口中的第一低电阻导电层和第二导电层被去除。 然后在第一开口中形成第一导电层和第二低电阻导电层，第二低电阻导电层填满第一开口。

公开(公告)号：US08404535B2

公开(公告)日：2013-03-26

申请号：US13304409

申请日：2011-11-25

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Cheng-Hsien Chou ,  Tian-Fu Chiang ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Cheng-Hsien Chou ,  Tian-Fu Chiang ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L21/28

CPC分类号： H01L29/6656 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.

摘要翻译： 公开了一种用于制造金属栅极晶体管的方法。 首先，提供具有第一晶体管区域和第二晶体管区域的衬底。 接下来，在基板上形成层叠膜，其中层叠膜包括至少一个高k电介质层和第一金属层。 图案化层叠的膜以在第一晶体管区域和第二晶体管区域中形成多个栅极，在栅极上形成电介质层，并且介电层的一部分被平坦化，直到到达每个栅极的顶部。 第一金属层从第二晶体管区域的栅极去除，并且第二金属层形成在电介质层的表面上，每个栅极用于在第一晶体管区域和第二晶体管区域中形成多个金属栅极。

公开(公告)号：US08193050B2

公开(公告)日：2012-06-05

申请号：US12907016

申请日：2010-10-18

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L21/8238

CPC分类号： H01L27/11

摘要： A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

摘要翻译： 公开了一种制造半导体结构的方法。 提供具有第一晶体管的衬底，其具有第一虚拟栅极和具有第二虚拟栅极的第二晶体管。 第一晶体管和第二晶体管的导电类型不同。 同时去除第一和第二伪栅极以形成相应的第一和第二开口。 在基板上形成高k电介质层，第二导电层和第一低电阻导电层，并填充第一和第二开口，第一低电阻导电层填充第二开口。 第一开口中的第一低电阻导电层和第二导电层被去除。 然后在第一开口中形成第一导电层和第二低电阻导电层，第二低电阻导电层填充第一开口。

公开(公告)号：US20110034019A1

公开(公告)日：2011-02-10

申请号：US12907016

申请日：2010-10-18

申请人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

发明人： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC分类号： H01L21/28

CPC分类号： H01L27/11

摘要： A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

摘要翻译： 公开了一种制造半导体结构的方法。 提供具有第一晶体管的衬底，其具有第一虚拟栅极和具有第二虚拟栅极的第二晶体管。 第一晶体管和第二晶体管的导电类型不同。 同时去除第一和第二伪栅极以形成相应的第一和第二开口。 在基板上形成高k电介质层，第二导电层和第一低电阻导电层，并填充第一和第二开口，第一低电阻导电层填充第二开口。 第一开口中的第一低电阻导电层和第二导电层被去除。 然后在第一开口中形成第一导电层和第二低电阻导电层，第二低电阻导电层填充第一开口。