公开(公告)号：US06648711B1

公开(公告)日：2003-11-18

申请号：US09592257

申请日：2000-06-12

Applicant: Jin Jang ,  Suk-jae Chung ,  Sung-hoon Lim ,  Jae-eun Yoo

Inventor： Jin Jang ,  Suk-jae Chung ,  Sung-hoon Lim ,  Jae-eun Yoo

IPC: H01J904

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  Y10S977/721 ,  Y10S977/723 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/888

Abstract: A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.

Abstract translation: 提供了即使在使用碳纳米管膜的低电压下也具有高电流密度的场致发射体，其制造方法以及具有该场致发射体的场致发射显示装置。场发射器包括绝缘基板。 形成在所述绝缘基板上的薄膜晶体管，所述薄膜晶体管具有半导体层，源极，漏极和栅电极，以及由所述薄膜的漏电极上的碳纳米管膜形成的电子发射单元 晶体管薄膜晶体管可以是共面型晶体管，交错型晶体管或反交错型晶体管。 与碳纳米管膜接触的漏电极的一部分的表面含有催化金属，其为镍或钴等过渡金属。 或者，漏电极本身可以由用于碳纳米管生长的催化金属形成。

公开(公告)号：US06331209B1

公开(公告)日：2001-12-18

申请号：US09556816

申请日：2000-04-21

Applicant: Jin Jang ,  Suk-jae Chung

Inventor： Jin Jang ,  Suk-jae Chung

IPC: C30B2518

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/17 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/888

Abstract: An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 1011 cm−3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is used as a source gas.

Abstract translation: 使用高密度等离子体形成纯化的碳纳米管的简单方法，由此除去石墨相或碳颗粒。 使用等离子体化学气相沉积法在1011cm -3以上的高等离子体密度下，在基板上生长碳纳米管。 碳纳米管形成包括：通过等离子体沉积在基板上生长具有预定厚度的碳纳米管层; 通过等离子体蚀刻来净化碳纳米管层; 并重复碳纳米管层的生长和纯化。 对于等离子体蚀刻，使用含卤素的气体，例如四氟化碳气体作为源气体。