公开(公告)号：US20130256769A1

公开(公告)日：2013-10-03

申请号：US13732353

申请日：2012-12-31

Applicant: Jin-Won JEONG ,  WONCHUL LEE

Inventor： Jin-Won JEONG ,  WONCHUL LEE

IPC: H01L27/105

CPC classification number: H01L27/1052 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10894

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include storage node pads disposed adjacent to each other between word lines but spaced apart from each other by an isolation pattern. Accordingly, it is possible to prevent a bridge problem from being caused by a mask misalignment. This enables to improve reliability of the semiconductor device.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括在字线之间彼此相邻设置但是通过隔离图案彼此间隔开的存储节点焊盘。 因此，可以防止由于掩模未对准而引起桥接问题。 这能够提高半导体器件的可靠性。

公开(公告)号：US20130256828A1

公开(公告)日：2013-10-03

申请号：US13732344

申请日：2012-12-31

Applicant: WONCHUL LEE ,  Eun A. KIM ,  Ja Young LEE

Inventor： WONCHUL LEE ,  Eun A. KIM ,  Ja Young LEE

IPC: H01L27/04

CPC classification number: H01L27/04 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate including first and second junction regions, a word line buried in the substrate, a bit line provided over the word line to cross the word line, a first contact provided between the substrate and the bit line and electrically connected to the first junction region, and a second contact provided between the bit lines and electrically connected to the second junction region. An overlapping area of a lower portion of the second contact may be greater than an overlapping area of an upper portion of the second contact with respect to the second junction region.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括：衬底，其包括第一和第二接合区域，埋在衬底中的字线，设置在字线上以跨越字线的位线;设置在衬底和位线之间的电连接 以及设置在位线之间并电连接到第二结区的第二接触。 第二触点的下部的重叠区域可以大于第二触点的上部相对于第二接合区域的重叠区域。