公开(公告)号：US20050153473A1

公开(公告)日：2005-07-14

申请号：US10510357

申请日：2003-04-04

申请人： Jing Hua Teng ,  Soo Jin Chua ,  Jian Rong Dong

发明人： Jing Hua Teng ,  Soo Jin Chua ,  Jian Rong Dong

IPC分类号： H01L21/18 ,  H01L29/12 ,  H01L33/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/40 ,  H01L21/00

CPC分类号： B82Y10/00 ,  B82Y20/00 ,  H01L21/182 ,  H01L29/122 ,  H01L29/125 ,  H01L29/127 ,  H01L33/0095 ,  H01S5/1003 ,  H01S5/1092 ,  H01S5/162 ,  H01S5/3412 ,  H01S5/3414 ,  H01S5/4087

摘要： A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface. The methods result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.

摘要翻译： 用于形成具有多个带隙的修改的半导体的方法涉及提供具有表面的半导体和响应于电或光刺激而发射光子的量子区域，该量子区域具有原始带隙并设置在该表面下方， 将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起在紧邻下面布置的量子区域的多个部分中的多个不同程度的混合 每个表面的选定区域。 可以以点或线图案或两者来施加材料层以增加多个带隙调谐。 该方法包括将层热层退火到表面。 该方法产生一种修饰的半导体，其取决于材料层在量子区的相应部分上方的表面上的位置，在量子区的多个部分中表现出许多不同的带隙。

公开(公告)号：US07223623B2

公开(公告)日：2007-05-29

申请号：US10510357

申请日：2003-04-04

申请人： Jing Hua Teng ,  Soo Jin Chua ,  Jian Rong Dong

发明人： Jing Hua Teng ,  Soo Jin Chua ,  Jian Rong Dong

IPC分类号： H01L21/00

CPC分类号： B82Y10/00 ,  B82Y20/00 ,  H01L21/182 ,  H01L29/122 ,  H01L29/125 ,  H01L29/127 ,  H01L33/0095 ,  H01S5/1003 ,  H01S5/1092 ,  H01S5/162 ,  H01S5/3412 ,  H01S5/3414 ,  H01S5/4087

摘要： A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface. The methods result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.

摘要翻译： 用于形成具有多个带隙的修改的半导体的方法涉及提供具有表面的半导体和响应于电或光刺激而发射光子的量子区域，该量子区域具有原始带隙并设置在该表面下方， 将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起在紧邻下面布置的量子区域的多个部分中的多个不同程度的混合 每个表面的选定区域。 可以以点或线图案或两者来施加材料层以增加多个带隙调谐。 该方法包括将层热层退火到表面。 该方法产生一种修饰的半导体，其取决于材料层在量子区的相应部分上方的表面上的位置，在量子区的多个部分中表现出许多不同的带隙。

公开(公告)号：US08421058B2

公开(公告)日：2013-04-16

申请号：US13130649

申请日：2009-11-20

申请人： Wei Liu ,  Chew Beng Soh ,  Soo Jin Chua ,  Jing Hua Teng

发明人： Wei Liu ,  Chew Beng Soh ,  Soo Jin Chua ,  Jing Hua Teng

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/04 ,  H01L33/08 ,  H01L33/32

摘要： A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure includes a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer including the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.

摘要翻译： 提供发光二极管结构和形成发光二极管结构的方法。 该结构包括超晶格，其包括第一阻挡层; 第一量子阱层，包括形成在第一阻挡层上的第一金属氮化物基材料; 形成在第一量子阱层上的第二阻挡层; 以及第二量子阱层，包括形成在所述第二阻挡层上的所述第一金属氮化物基材料; 并且其中所述第一量子阱层的导带能量与所述第二量子阱层的导带能量之间的差与用于减小所述超晶格中的电子动能的单个或多个纵向光学声子能量匹配。

公开(公告)号：US20110284824A1

公开(公告)日：2011-11-24

申请号：US13130649

申请日：2009-11-20

申请人： Wei Liu ,  Chew Beng Soh ,  Soo Jin Chua ,  Jing Hua Teng

发明人： Wei Liu ,  Chew Beng Soh ,  Soo Jin Chua ,  Jing Hua Teng

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  H01L33/08 ,  H01L33/32

摘要： A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure comprises a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer comprising the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.

摘要翻译： 提供发光二极管结构和形成发光二极管结构的方法。 该结构包括超晶格，其包括第一阻挡层; 第一量子阱层，包括形成在第一阻挡层上的第一金属氮化物基材料; 形成在第一量子阱层上的第二阻挡层; 以及第二量子阱层，包括形成在所述第二阻挡层上的所述第一金属氮化物基材料; 并且其中所述第一量子阱层的导带能量与所述第二量子阱层的导带能量之间的差与用于减小所述超晶格中的电子动能的单个或多个纵向光学声子能量匹配。

公开(公告)号：US08436334B2

公开(公告)日：2013-05-07

申请号：US12682526

申请日：2007-10-12

申请人： Chew Beng Soh ,  Soo Jin Chua ,  Wei Liu ,  Jing Hua Teng

发明人： Chew Beng Soh ,  Soo Jin Chua ,  Wei Liu ,  Jing Hua Teng

IPC分类号： H01L21/00

CPC分类号： H01L33/06 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32

摘要： A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.

摘要翻译： 提供了用于发光二极管的多量子阱（MQW）结构和用于制造用于发光二极管的MQW结构的方法。 MQW结构包括多个量子阱结构，每个量子阱结构包括：阻挡层; 以及在所述阻挡层上形成有嵌入其中的量子点纳米结构的阱层，所述势垒层和所述阱层包含第一金属氮化物基材料; 其中所述量子阱结构中的至少一个还包括形成在所述阱层上的覆盖层，所述覆盖层包含与所述第一金属氮化物基材料相比具有不同金属元素的第二金属氮化物基材料。

公开(公告)号：US20100224857A1

公开(公告)日：2010-09-09

申请号：US12682526

申请日：2007-10-12

申请人： Chew Beng Soh ,  Soo Jin Chua ,  Wei Liu ,  Jing Hua Teng

发明人： Chew Beng Soh ,  Soo Jin Chua ,  Wei Liu ,  Jing Hua Teng

IPC分类号： H01L33/06 ,  H01L21/20

CPC分类号： H01L33/06 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32

摘要： A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.

摘要翻译： 提供了用于发光二极管的多量子阱（MQW）结构和用于制造用于发光二极管的MQW结构的方法。 MQW结构包括多个量子阱结构，每个量子阱结构包括：阻挡层; 以及在所述阻挡层上形成有嵌入其中的量子点纳米结构的阱层，所述势垒层和所述阱层包含第一金属氮化物基材料; 其中所述量子阱结构中的至少一个还包括形成在所述阱层上的覆盖层，所述覆盖层包含与所述第一金属氮化物基材料相比具有不同金属元素的第二金属氮化物基材料。