公开(公告)号：US20180337516A1

公开(公告)日：2018-11-22

申请号：US15986297

申请日：2018-05-22

申请人： Finisar Corporation

发明人： Jim Tatum ,  Gary Landry

IPC分类号： H01S5/42 ,  H01S5/183 ,  H01S5/042 ,  H01S5/10 ,  H01S5/026 ,  H01S5/343 ,  H01S5/187

CPC分类号： H01S5/423 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/1003 ,  H01S5/1021 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/187 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/343 ,  H01S2301/166 ,  H01S2301/20 ,  H01S2304/02 ,  H01S2304/04

摘要： A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

公开(公告)号：US20180241176A1

公开(公告)日：2018-08-23

申请号：US15439425

申请日：2017-02-22

申请人： International Business Machines Corporation

发明人： Stefan Abel ,  Lukas Czornomaz ,  Jean Fompeyrine ,  Utz Herwig Hahn ,  Folkert Horst ,  Marc Seifried

IPC分类号： H01S5/042 ,  H01S5/30 ,  H01S5/323 ,  H01S5/223 ,  H01S5/125 ,  H01S5/12

CPC分类号： H01S5/026 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/2031 ,  H01S5/2224 ,  H01S5/227

摘要： The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.

公开(公告)号：US20180175588A1

公开(公告)日：2018-06-21

申请号：US15579109

申请日：2016-06-06

申请人： nLIGHT, Inc.

发明人： Manoj Kanskar

IPC分类号： H01S5/125 ,  H01S5/10

CPC分类号： H01S5/125 ,  H01S5/06256 ,  H01S5/1003 ,  H01S5/1007 ,  H01S5/1064 ,  H01S5/1085 ,  H01S2301/163

摘要： A semiconductor laser device is disclosed that includes a laser resonator situated to produce a laser beam, with the laser resonator including an angled distributed Bragg reflector (a-DBR) region including first and second ends defining an a-DBR region length corresponding to a Bragg resonance condition with the first end being uncleaved and including a first mode hop region having a first end optically coupled to the a-DBR region first end and extending a first mode hop region length associated with the a-DBR region length to a second end so as to provide a variable longitudinal mode selection for the laser beam.

公开(公告)号：US20180131158A1

公开(公告)日：2018-05-10

申请号：US15866127

申请日：2018-01-09

申请人： Infinera Corporation

发明人： Peter W. Evans ,  Mingzhi Lu ,  Fred A. Kish, JR. ,  Vikrant Lal ,  Scott Corzine ,  John W. Osenbach ,  Jin Yan

IPC分类号： H01S5/06 ,  H01S5/30 ,  H01S5/22 ,  H01S5/042 ,  H01S5/026 ,  H01S5/10 ,  H01S5/024

CPC分类号： H01S5/1017 ,  G02B6/12004 ,  G02B6/2813 ,  G02B26/04 ,  G02B2006/12121 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/58 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/06256 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1215 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3214 ,  H01S2301/176 ,  H04B10/2507 ,  H04B10/40 ,  H04B10/503 ,  H04B10/616 ,  H04B10/67

摘要： Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

公开(公告)号：US09912118B2

公开(公告)日：2018-03-06

申请号：US12803476

申请日：2010-06-28

申请人： Iulian Basarab Petrescu-Prahova

发明人： Iulian Basarab Petrescu-Prahova

IPC分类号： H01S5/20 ,  H01S5/10 ,  H01S5/028 ,  H01S5/16

CPC分类号： H01S5/1032 ,  H01S5/028 ,  H01S5/1003 ,  H01S5/16 ,  H01S5/2018 ,  H01S5/2031 ,  H01S2301/18

摘要： Semiconductor laser with mirror facet protection against degradation including a modified segment near the exit window that has a double waveguide with a reduced confinement factor compared with the confinement factor of the double waveguide of the main laser segment, such that the radiation at the exit facet in the modified double waveguide is pushed away from the active region, less radiation is absorbed at the facet and less heat is produced by nonradiative recombination at the exit facet, while the field distribution of the two double waveguides have a good overlap and low transfer losses due to the use of waveguide type structures with an active waveguide and a passive trapping waveguide.

公开(公告)号：US20180034238A1

公开(公告)日：2018-02-01

申请号：US15454202

申请日：2017-03-09

申请人： Mitsubishi Electric Corporation

发明人： Naoki NAKAMURA ,  Eiji NAKAI

IPC分类号： H01S5/042 ,  H01S5/026 ,  H01S5/343

CPC分类号： H01S5/0421 ,  H01S5/026 ,  H01S5/1003 ,  H01S5/1017 ,  H01S5/2031 ,  H01S5/2275 ,  H01S5/34313 ,  H01S5/34326

摘要： An optical semiconductor device includes: an n-type semiconductor substrate; an n-type cladding layer provided on the n-type semiconductor substrate; an active layer of a semiconductor laser provided on the n-type cladding layer; a waveguide layer of a waveguide provided on the n-type cladding layer and having a side facing a side of the active layer; a p-type cladding layer provided on the active layer and the waveguide layer; and a middle layer provided between the side of the active layer and the side of the waveguide layer, provided between the n-type cladding layer and the waveguide layer, not provided on the active layer, and having a band gap greater than a band gap of the waveguide layer.

公开(公告)号：US09711941B1

公开(公告)日：2017-07-18

申请号：US14978485

申请日：2015-12-22

申请人： Soraa Laser Diode, Inc.

发明人： James W. Raring

IPC分类号： G02B6/12 ,  H01S5/026 ,  H01S5/323 ,  H01S3/081 ,  H01S5/22

CPC分类号： H01S5/0268 ,  G02B6/126 ,  G02B2006/12085 ,  G02B2006/12121 ,  H01S3/081 ,  H01S5/005 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/1003 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34333

摘要： A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.

公开(公告)号：US20170093126A1

公开(公告)日：2017-03-30

申请号：US15375550

申请日：2016-12-12

申请人： NGK INSULATORS, LTD.

发明人： Jungo KONDO ,  Shoichiro YAMAGUCHI ,  Tetsuya EJIRI

IPC分类号： H01S5/14

CPC分类号： H01S5/141 ,  G02B6/42 ,  H01S5/10 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1215 ,  H01S5/1237 ,  H01S5/14 ,  H01S5/146

摘要： An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face on which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted.

公开(公告)号：US20170093118A1

公开(公告)日：2017-03-30

申请号：US15311798

申请日：2015-05-20

申请人： CHEM OPTICS INC.

发明人： Hak Kyu LEE ,  Joon Oh PARK ,  Jun Kyu SEO ,  Jang Uk SHIN

IPC分类号： H01S3/131 ,  H01S3/139 ,  H01S5/14

CPC分类号： H01S3/0637 ,  H01S3/063 ,  H01S3/1055 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02292 ,  H01S5/02446 ,  H01S5/026 ,  H01S5/0287 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/141

摘要： Provided is a tunable wavelength laser module including: an external cavity type light source generating broadband light; an optical waveguide; a Bragg grating formed in the optical waveguide; a heater provided above the optical waveguide in which the Bragg grating is formed and adjusting a reflection band of the Bragg grating by a thermo-optic effect; a direction change waveguide region changing direction of optical signals obtained by the adjusted reflection band of the Bragg grating, by a predetermined angle; a 45-degree reflection part transmitting some of the optical signals direction-changed by the direction change waveguide region and escaping from the optical waveguide therethrough and reflecting the others of the optical signals in a vertical upward direction thereby; and a lens making the optical signals reflected in the vertical upward direction by the 45-degree reflection part collimated light or convergent light.

公开(公告)号：US09423678B2

公开(公告)日：2016-08-23

申请号：US14159111

申请日：2014-01-20

申请人： Seiko Epson Corporation

发明人： Masamitsu Mochizuki ,  Michifumi Nagawa

IPC分类号： H01L33/00 ,  G03B21/20 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01L33/10 ,  B82Y20/00 ,  H01S5/16 ,  H01S5/343

CPC分类号： G03B21/2033 ,  B82Y20/00 ,  G03B21/2066 ,  H01L33/0045 ,  H01L33/10 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1071 ,  H01S5/162 ,  H01S5/34326

摘要： A light emitting device includes: an active layer; and a first cladding layer and a second cladding layer that sandwich the active layer, wherein the active layer forms an optical waveguide that guides light, a traveling direction of the light guided in the optical waveguide changes at a first reflection part provided on a first side surface of the active layer, and the first reflection part is located outside of a region in which the first cladding layer and the second cladding layer are provided in a plan view.

摘要翻译： 发光器件包括：有源层; 以及夹着有源层的第一包层和第二包层，其中所述有源层形成引导光的光波导，在所述光波导中引导的光的行进方向在设置在所述第一侧上的第一反射部变化 有源层的表面，第一反射部位于设置有第一覆盖层和第二覆盖层的区域的外侧。