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21 条记录 (耗时 0.026 秒)

    Sintered silicon carbide ceramic body
    1.
    发明授权
    Sintered silicon carbide ceramic body 失效
    烧结碳化硅陶瓷体

    公开(公告)号：US4312954A

    公开(公告)日：1982-01-26

    申请号：US584226

    申请日：1975-06-05

    申请人： John A. Coppola ,  Lawrence N. Hailey ,  Carl H. McMurtry

    发明人： John A. Coppola ,  Lawrence N. Hailey ,  Carl H. McMurtry

    IPC分类号： C04B35/565 ,  C04B35/56

    CPC分类号： C04B35/565

    摘要： Pressureless sintering of silicon carbide to produce ceramic bodies having 75% and greater theoretical densities, can be accomplished by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900.degree. C. to about 2500.degree. C.

    摘要翻译： 碳化硅的无压烧结以产生具有75％或更高理论密度的陶瓷体，可以通过将包含细碎碳化硅，硼源如碳化硼，碳源如酚醛树脂和临时粘合剂的成形体烧制在 烧结温度为约1900℃至约2500℃

    Process for producing sintered silicon carbide ceramic body
    3.
    发明授权
    Process for producing sintered silicon carbide ceramic body 失效
    烧结碳化硅陶瓷体的制造方法

    公开(公告)号：US4124667A

    公开(公告)日：1978-11-07

    申请号：US790354

    申请日：1977-04-25

    申请人： John A. Coppola ,  Laurence N. Hailey ,  Carl H. McMurtry

    发明人： John A. Coppola ,  Laurence N. Hailey ,  Carl H. McMurtry

    IPC分类号： C04B35/565 ,  C04B35/52

    CPC分类号： C04B35/565

    摘要： Pressureless sintering of silicon carbide to produce ceramic bodies having 75% and greater theoretical densities, can be accomplished by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900.degree. C to about 2500.degree. C.

    摘要翻译： 碳化硅的无压烧结以产生具有75％或更高理论密度的陶瓷体，可以通过将包含细碎碳化硅，硼源如碳化硼，碳源如酚醛树脂和临时粘合剂的成形体烧制在 烧结温度为约1900℃至约2500℃

    Sintered alpha silicon carbide ceramic body having equiaxed microstructure
    4.
    发明授权
    Sintered alpha silicon carbide ceramic body having equiaxed microstructure 失效
    具有等轴显微组织的烧结α碳化硅陶瓷体

    公开(公告)号：US4346049A

    公开(公告)日：1982-08-24

    申请号：US930435

    申请日：1978-07-31

    申请人： John A. Coppola ,  Laurence N. Hailey ,  Carl H. McMurtry

    发明人： John A. Coppola ,  Laurence N. Hailey ,  Carl H. McMurtry

    IPC分类号： C04B35/565 ,  F27B9/04

    CPC分类号： C04B35/565

    摘要： Pressureless sintered silicon carbide ceramic bodies, having an equiaxed microstructure and an alpha crystalline habit can be produced by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900.degree. C. to about 2250.degree. C., depending on the sintering atmosphere, under conditions such that a coating of carbon source is maintained on the finely divided silicon carbide, and sufficient boron is maintained within the shaped body during firing. Boron can be maintained within the shaped body by various techniques, such as the use of a "seasoned boat" or graphite container for the body being sintered, which has been saturated with boron by exposure to boron at or about the temperature of sintering.There is also disclosed a process for producing a sintered silicon carbide ceramic body, with or without the equiaxed crystal microstructure, from silicon carbide powders of alpha or beta crystal structure, or amorphous noncrystalline silicon carbide, or mixtures thereof.

    摘要翻译： 具有等轴显微组织和α晶体习性的无压烧结碳化硅陶瓷体可以通过以下方式制造：将成形体包含细碎的碳化硅，硼源如碳化硼，碳源如酚醛树脂和临时粘结剂 烧结温度为约1900℃至约2250℃，这取决于烧结气氛，使得在细碎碳化硅上保持碳源的涂层，并且在成形体内保持足够的硼 射击 可以通过各种技术将硼保持在成形体内，例如使用烧结体的“经久化的船”或石墨容器，其在烧结温度或约烧结过程中通过暴露于硼而被硼饱和。 还公开了一种制造具有或不具有等轴晶体微结构的烧结碳化硅陶瓷体的方法，其由α或β晶体结构的碳化硅粉末，或非晶非晶碳化硅或其混合物制成。

    Silicon carbide powder compositions
    5.
    发明授权
    Silicon carbide powder compositions 失效
    碳化硅粉末组合物

    公开(公告)号：US4123286A

    公开(公告)日：1978-10-31

    申请号：US754648

    申请日：1976-12-27

    申请人： John A. Coppola ,  Harry A. Lawler ,  Carl H. McMurtry

    发明人： John A. Coppola ,  Harry A. Lawler ,  Carl H. McMurtry

    IPC分类号： C01B31/36 ,  C04B35/565 ,  H05K1/03

    CPC分类号： C04B35/565

    摘要： A powder containing substantial amounts of alpha phase silicon carbide suitable for use in subsequent sintering operations to obtain a high-density, high-strength ceramic product is described. The powder may consist substantially entirely of alpha silicon carbide or may consist of mixtures of alpha and beta phase silicon carbide. The silicon carbide powder of the present invention has an average particle size of from about 0.10 to about 2.50 microns and may contain maximum amounts of the following materials by weight based upon 100 parts of powder.______________________________________ SiO.sub.2 2.00 Free Silicon 0.25 Iron 0.50 Alkali and Alkaline Earth Metals 0.50 Total Metal Oxides 3.75 ______________________________________ Sinterable powders and methods of producing sintered products from the powders are also described.

    摘要翻译： 描述了适用于后续烧结操作以获得高密度高强度陶瓷产品的大量α相碳化硅的粉末。 粉末可以基本上由α碳化硅组成，或者可以由α相和β相碳化硅的混合物组成。 本发明的碳化硅粉末具有约0.10至约2.50微米的平均粒度，并且可以含有最大量的以100重量份的粉末为基准的最大量的以下材料。 } SiO2 2.00}游离硅0.25}铁0.50}碱金属和碱土}金属0.50}总金属氧化物3.75}还描述了可从粉末生产烧结产品的可烧结粉末和方法。

    Sintered alpha silicon carbide ceramic body having equiaxed microstructure
    6.
    发明授权
    Sintered alpha silicon carbide ceramic body having equiaxed microstructure 失效

    公开(公告)号：US4179299A

    公开(公告)日：1979-12-18

    申请号：US24148

    申请日：1979-03-26

    申请人： John A. Coppola ,  Laurence N. Hailey ,  Carl H. McMurtry

    发明人： John A. Coppola ,  Laurence N. Hailey ,  Carl H. McMurtry

    IPC分类号： C04B35/565 ,  C04B35/56

    CPC分类号： C04B35/565

    摘要： Pressureless sintered silicon carbide ceramic bodies, having an equiaxed microstructure and an alpha crystalline habit can be produced by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900.degree. C. to about 2250.degree. C., depending on the sintering atmosphere, under conditions such that a coating of carbon source is maintained on the finely divided silicon carbide, and sufficient boron is maintained within the shaped body during firing. Boron can be maintained within the shaped body by various techniques, such as the use of a "seasoned boat" or graphite container for the body being sintered, which has been saturated with boron by exposure to boron at or about the temperature of sintering.There is also disclosed a process for producing a sintered silicon carbide ceramic body, with or without the equiaxed crystal microstructure, from silicon carbide powders of alpha or beta crystal structure, or amorphous noncrystalline silicon carbide, or mixtures thereof.