公开(公告)号：US4772924A

公开(公告)日：1988-09-20

申请号：US129942

申请日：1987-11-25

申请人： John C. Bean ,  David V. Lang ,  Thomas P. Pearsall ,  Roosevelt People ,  Henryk Temkin

发明人： John C. Bean ,  David V. Lang ,  Thomas P. Pearsall ,  Roosevelt People ,  Henryk Temkin

IPC分类号： H01L29/161 ,  H01L31/0352 ,  H01L31/107 ,  H01L27/12

CPC分类号： B82Y20/00 ,  H01L31/035254 ,  H01L31/1075

摘要： A strained layer superlattice comprising Ge.sub.x Si.sub.1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.

摘要翻译： 包含与Si层交错的GexSi1-x层的应变层超晶格是由于超晶格中的应变引起的带隙大的偏移而在红外波长处的优异的光电检测器。

公开(公告)号：US20090148979A1

公开(公告)日：2009-06-11

申请号：US12369170

申请日：2009-02-11

申请人： Christian Leo Kloc ,  Oleg Mitrofanov ,  Theo Max Siegrist ,  John Magnus Wikberg ,  David V. Lang

发明人： Christian Leo Kloc ,  Oleg Mitrofanov ,  Theo Max Siegrist ,  John Magnus Wikberg ,  David V. Lang

IPC分类号： H01L51/40

CPC分类号： H01L51/5052 ,  H01L21/268 ,  H01L51/5253

摘要： A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.

摘要翻译： 一种方法包括在衬底的表面上形成包括多芳族分子的半导体区域。 该方法还包括在该区域上形成基本上不透氧的介电层。 形成半导体区域的行为包括将分子暴露于氧，同时将分子暴露于可见光或紫外光。

公开(公告)号：US06862394B2

公开(公告)日：2005-03-01

申请号：US10036437

申请日：2002-01-07

申请人： David A. Ackerman ,  John E. Johnson ,  David V. Lang ,  C. Lewis Reynolds, Jr.

发明人： David A. Ackerman ,  John E. Johnson ,  David V. Lang ,  C. Lewis Reynolds, Jr.

IPC分类号： G02B6/12 ,  H01S5/0625 ,  H01S5/12 ,  G02B6/10

CPC分类号： H01S5/06255 ,  G02B2006/12107 ,  G02B2006/12121 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1228

摘要： A method of increasing the monomolecular recombination and the immunity to noise of a continuously tunable laser is disclosed. A concentration of recombination centers in the range of about 1×1016 cm−3 to about 1×1018 cm−3 in the tuning region of the laser device is achieved by doping the waveguide layer with impurity atoms, by irradiating the waveguide layer with high energy particles or by varying the growth conditions of the waveguide layer to introduce native point defects due to lattice mismatch. This way, the monomolecular recombination is increased and the radiative recombination over low current ranges is reduced. By increasing the monomolecular recombination, the immunity to noise is improved but the tuning efficiency is reduced. Nevertheless, only a minimal effect on the tuning efficiency is noted over high current ranges and, therefore, the overall tuning range is only insignificantly changed.

摘要翻译： 公开了增加连续可调激光器的单分子重组和抗噪声的方法。 在激光器件的调谐区域中，在约1×10 16 cm -3至约1×10 18 cm -3范围内的复合中心浓度通过用杂质原子掺杂波导层来实现，通过 用高能粒子照射波导层，或通过改变波导层的生长条件来引入由于晶格失配引起的自然点缺陷。 这样，单分子重组增加，并且在低电流范围内的辐射复合减少。 通过增加单分子重组，提高了对噪声的抗扰性，但调谐效率降低。 然而，在高电流范围内仅注意到对调谐效率的最小影响，因此整体调谐范围只有微不足道的变化。