摘要:
The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
摘要:
An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).
摘要:
A resonator. The resonator includes a bottom electrode overlaying at least part of a substrate, a composite structure overlaying at least part of the bottom electrode, and a top electrode overlaying at least part of the composite structure. The composite structure comprises a piezoelectric layer and a compensation layer, and the compensation layer includes silicon dioxide combined with boron.
摘要:
An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).