摘要:
An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).
摘要:
An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG).
摘要:
The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
摘要:
A resonator. The resonator includes a bottom electrode overlaying at least part of a substrate, a composite structure overlaying at least part of the bottom electrode, and a top electrode overlaying at least part of the composite structure. The composite structure comprises a piezoelectric layer and a compensation layer, and the compensation layer includes silicon dioxide combined with boron.
摘要:
A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.
摘要:
A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.
摘要:
Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.
摘要:
A material, preferably a magnetic data storage disc, includes a carbon layer covering at least a portion of a magnetic substrate and a crosslinked fluoropolymer layers covering at least-a portion of the carbon layer. The crosslinked polymer layer has a thickness less than about 40 angstroms, and the carbon layer has a thickness less than about 100 angstroms. Preferred fluoropolymers include, for example, perfluoropolyethers. In some embodiments, the crosslinked fluoropolymer layer has a thickness at one point on the carbon layer greater than the thickness crosslinked fluoropolymer layer at another point on the carbon layer. The crosslinking generally is performed by irradiating the lubricant material on the carbon layer.
摘要:
Stable operation of an ion beam deposition (IBD) station forming part of a multi-station apparatus and formation therein of a tribologically robust DLC-type i-C:H ultra-thin protective overcoat for high recording density magnetic media are achieved by pulsing (i.e., limiting) the flow of a hydrocarbon source gas to the ion beam source to deposition intervals between substrate transfer/pressure cycling. Embodiments include utilizing a circularly-shaped, closed drift, end Hall type ion beam source as part of a multi-process station apparatus, wherein undesirable arcing of the ion beam source during substrate transfer is eliminated, or at least substantially reduced, as a result of the pulsed supply of hydrocarbon source gas to the ion beam source.
摘要:
A method of forming a fluorine-bearing diamond layer on non-diamond substrates, especially on tool substrates comprising a metal matrix and hard particles, such as tungsten carbide particles, in the metal matrix. The substrate and a fluorine-bearing plasma or other gas are then contacted under temperature and pressure conditions effective to nucleate fluorine-bearing diamond on the substrate. A tool insert substrate is treated prior to the diamond nucleation and growth operation by etching both the metal matrix and the hard particles using suitable etchants.