公开(公告)号：US20070184645A1

公开(公告)日：2007-08-09

申请号：US11737392

申请日：2007-04-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman Jr. ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman Jr. ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.

摘要翻译： 提供一种形成半导体结构的方法。 一种方法包括在衬底和接合衬垫之间形成器件区域。 在接合焊盘和具有间隙的器件区域之间形成导体。 使用比导体硬的绝缘材料填充间隙，以形成延伸穿过导体的相对硬的材料的支柱，并在导体和接合垫之间形成绝缘材料的绝缘层。