公开(公告)号：US20080271889A1

公开(公告)日：2008-11-06

申请号：US12048958

申请日：2008-03-14

申请人： John Gordon Misselbrook ,  Russell Meyer ,  Darcy A. Schultz ,  Trevor Gordon Hayes ,  Quentin Shane Stang

发明人： John Gordon Misselbrook ,  Russell Meyer ,  Darcy A. Schultz ,  Trevor Gordon Hayes ,  Quentin Shane Stang

IPC分类号： E21B43/267

CPC分类号： E21B43/305 ,  E21B33/134 ,  E21B43/267

摘要： An improved method for building a plug in a horizontal wellbore using a fluid pill pumped into the wellbore at the end of a fracturing treatment. The fluid pill includes a high concentration of an ultra lightweight proppant, such as a neutrally buoyant proppant or an ultra lightweight proppant mixture. The fluid pill is pumped down the wellbore until it almost reaches fractures within a zone of interest. The pumping is then ceased or reduced, allowing the fractures to partially close. The ultra lightweight proppant remains suspended within the fluid pill while stationary. The pumping is then resumed at a very slow rate or as a short pump burst, thus causing the proppant in the fluid pill to bridge off until a bridge plug is formed.

摘要翻译： 一种改进的在压裂处理结束时使用在井眼中泵送的流体药液在水平井筒中建造塞子的方法。 流体丸包括高浓度的超轻质支撑剂，例如中性浮力支撑剂或超轻质支撑剂混合物。 将液体药液泵送到井筒下方，直到其几乎达到感兴趣区域内的裂缝。 然后泵送停止或减少，允许裂缝部分关闭。 超轻型支撑剂在静止时保持悬浮在流体药片内。 然后以非常慢的速率恢复泵送，或者作为短的泵脉冲恢复，从而使流体药丸中的支撑剂桥接，直到形成桥塞。

公开(公告)号：US07735556B2

公开(公告)日：2010-06-15

申请号：US12048958

申请日：2008-03-14

申请人： John Gordon Misselbrook ,  Russell Meyer ,  Darcy A. Schultz ,  Trevor Gordon Hayes ,  Quentin Shane Stang

发明人： John Gordon Misselbrook ,  Russell Meyer ,  Darcy A. Schultz ,  Trevor Gordon Hayes ,  Quentin Shane Stang

IPC分类号： E21B43/267 ,  E21B33/134

CPC分类号： E21B43/305 ,  E21B33/134 ,  E21B43/267

摘要： An improved method for building a plug in a horizontal wellbore using a fluid pill pumped into the wellbore at the end of a fracturing treatment. The fluid pill includes a high concentration of an ultra lightweight proppant, such as a neutrally buoyant proppant or an ultra lightweight proppant mixture. The fluid pill is pumped down the wellbore until it almost reaches fractures within a zone of interest. The pumping is then ceased or reduced, allowing the fractures to partially close. The ultra lightweight proppant remains suspended within the fluid pill while stationary. The pumping is then resumed at a very slow rate or as a short pump burst, thus causing the proppant in the fluid pill to bridge off until a bridge plug is formed.

摘要翻译： 一种改进的在压裂处理结束时使用在井眼中泵送的流体药液在水平井筒中建造塞子的方法。 流体丸包括高浓度的超轻质支撑剂，例如中性浮力支撑剂或超轻质支撑剂混合物。 将液体药液泵送到井筒下方，直到其几乎达到感兴趣区域内的裂缝。 然后泵送停止或减少，允许裂缝部分关闭。 超轻型支撑剂在静止时保持悬浮在流体药片内。 然后以非常慢的速率恢复泵送，或者作为短的泵脉冲恢复，从而使流体药丸中的支撑剂桥接，直到形成桥塞。

公开(公告)号：US20050174871A1

公开(公告)日：2005-08-11

申请号：US11101801

申请日：2005-04-07

申请人： Russell Meyer ,  Ray Beffa

发明人： Russell Meyer ,  Ray Beffa

IPC分类号： G11C7/04 ,  G11C11/406 ,  G11C7/00

CPC分类号： G11C11/40626 ,  G11C11/406

摘要： The illustrated embodiments relate to a process for improving retention time of a set of integrated circuit devices. The process comprises placing the set of integrated circuit devices in a reverse bias condition, and elevating the surrounding temperature of the set of integrated circuit devices for a predetermined period of time.

摘要翻译： 所示实施例涉及一种用于改善一组集成电路器件的保持时间的方法。 该过程包括将集成电路器件集合放置在反向偏置状态，并且将集成电路器件集合的周围温度提高预定时间段。

公开(公告)号：US06723618B2

公开(公告)日：2004-04-20

申请号：US10206602

申请日：2002-07-26

申请人： Russell Meyer ,  Jeffrey W. Honeycutt ,  Stephen R. Porter

发明人： Russell Meyer ,  Jeffrey W. Honeycutt ,  Stephen R. Porter

IPC分类号： H01L218238

CPC分类号： H01L21/76205

摘要： Field isolation structures and methods of forming field isolation structures are described. In one implementation, the method includes etching a trench within a monocrystalline silicon substrate. The trench has sidewalls and a base, with the base comprising monocrystalline silicon. A dielectric material is formed on the sidewalls of the trench. Epitaxial monocrystalline silicon is grown from the base of the trench and over at least a portion of the dielectric material. An insulating layer is formed over the epitaxial monocrystalline silicon. According to one implementation, the invention includes a field isolation structure formed within a monocrystalline silicon comprising substrate. The field isolation structure includes a trench having sidewalls. A dielectric material is received on the sidewalls within the trench. Monocrystalline silicon is received within the trench between the dielectric material of the sidewalls. An insulating layer is received over the monocrystalline silicon within the trench. Additional implementations are contemplated.

摘要翻译： 描述了现场隔离结构和形成场隔离结构的方法。 在一个实施方案中，该方法包括蚀刻单晶硅衬底内的沟槽。 沟槽具有侧壁和基底，底部包括单晶硅。 介电材料形成在沟槽的侧壁上。 外延单晶硅从沟槽的底部至少部分介电材料生长。 在外延单晶硅上形成绝缘层。 根据一个实施方案，本发明包括在包含单晶硅的衬底内形成的场隔离结构。 场隔离结构包括具有侧壁的沟槽。 电介质材料被容纳在沟槽内的侧壁上。 单晶硅被接纳在侧壁的电介质材料之间的沟槽内。 绝缘层被接纳在沟槽内的单晶硅上。 考虑附加实现。