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    Micro-fluid ejection assemblies
    1.
    发明申请
    Micro-fluid ejection assemblies 有权
    微流体喷射组件

    公开(公告)号：US20050231557A1

    公开(公告)日：2005-10-20

    申请号：US10823939

    申请日：2004-04-14

    申请人： John Krawczyk ,  Andrew McNees ,  James Mrvos ,  Carl Sullivan

    发明人： John Krawczyk ,  Andrew McNees ,  James Mrvos ,  Carl Sullivan

    IPC分类号： B41J2/16 ,  C23F1/00

    CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628

    摘要： A micro-fluid ejection assembly including a silicon substrate having accurately formed fluid paths therein. The fluid paths are formed by a deep reactive ion etching process conducted on a substrate having a surface characteristic before etching selected from the group consisting of a dielectric layer thickness of no more than about 5000 Angstroms, and a substantially dielectric material free pitted surface wherein a root mean square depth of surface pitting is less than about 500 Angstroms and a maximum surface pitting depth is no more than about 2500 Angstroms. Fluid paths in such substrates having improved flow characteristics for more reliable fluid ejection operations.

    摘要翻译： 一种微流体喷射组件，包括其中具有精确形成的流体路径的硅衬底。 流体路径是通过在具有不超过约5000埃的电介质层厚度的蚀刻之前在具有蚀刻前的表面特性的基底上进行的深反应离子蚀刻工艺形成的，以及基本上不含介质材料的凹坑表面，其中a 表面点蚀的均方根深度小于约500埃，最大表面点蚀深度不超过约2500埃。 这种衬底中的流体路径具有改进的流动特性以便更可靠的流体喷射操作。

    Methods of deep reactive ion etching
    2.
    发明申请
    Methods of deep reactive ion etching 失效

    公开(公告)号：US20060054590A1

    公开(公告)日：2006-03-16

    申请号：US10938009

    申请日：2004-09-10

    申请人： John Krawczyk ,  Andrew McNees ,  James Mrvos

    发明人： John Krawczyk ,  Andrew McNees ,  James Mrvos

    IPC分类号： B41J2/04 ,  G11B5/127

    CPC分类号： B41J2/1631 ,  B41J2/1603 ,  B41J2/1628

    摘要： A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes the steps of applying a photoresist layer to the first surface of the semiconductor substrate. The photoresist layer is patterned and developed using a gray scale mask for a first fluid supply slot. The semiconductor substrate is then reactive ion etched, to form the at least two fluid supply slots through the thickness of the substrate. The first fluid supply slot is substantially wider than the second fluid supply slot, and the first and second fluid supply slots are etched through the substrate at substantially the same rate.

    METHOD FOR DRY ETCHING FLUID FEED SLOTS IN A SILICON SUBSTRATE
    6.
    发明申请
    METHOD FOR DRY ETCHING FLUID FEED SLOTS IN A SILICON SUBSTRATE 有权
    用于在硅衬底中干燥流体进料料筒的方法

    公开(公告)号：US20070257006A1

    公开(公告)日：2007-11-08

    申请号：US11779085

    申请日：2007-07-17

    申请人： David BERNARD ,  John Krawczyk ,  Andrew McNees

    发明人： David BERNARD ,  John Krawczyk ,  Andrew McNees

    IPC分类号： C23F1/00

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B81B2201/052 ,  B81C1/00087

    摘要： A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrates. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.

    摘要翻译： 一种微加工半导体衬底以在其中形成一个或多个通孔的方法。 半导体衬底具有与器件侧相对的器件侧和流体侧。 该方法包括将p型掺杂材料扩散到半导体衬底的一个或多个通孔位置的器件侧，以通过衬底的厚度进行蚀刻。 然后用干蚀刻工艺将半导体衬底从衬底的器件侧蚀刻到衬底的流体侧，使得在衬底中形成具有折入轮廓的一个或多个通槽。

    Micro-fluid ejection head containing reentrant fluid feed slots
    7.
    发明申请
    Micro-fluid ejection head containing reentrant fluid feed slots 有权
    微流体喷射头包含可重入流体进料槽

    公开(公告)号：US20060113277A1

    公开(公告)日：2006-06-01

    申请号：US11002453

    申请日：2004-12-01

    申请人： John Krawczyk ,  Andrew McNees ,  Richard Warner

    发明人： John Krawczyk ,  Andrew McNees ,  Richard Warner

    IPC分类号： C23F1/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： B41J2/1628 ,  B41J2/1433 ,  B41J2/162

    摘要： A method of micro-machining a semiconductor substrate to form through slots therein and substrates made by the method. The method includes providing a dry etching chamber having a platen for holding a semiconductor substrate. During an etching cycle of a dry etch process for the semiconductor substrate, a source power is decreased, a chamber pressure is decreased from a first pressure to a second pressure, and a platen power is increased from a first power to a second power. Through slots in the substrate provided by the method can have a reentrant profile for fluid flow therethrough.

    摘要翻译： 一种微加工半导体衬底以形成通孔的方法和通过该方法制成的衬底。 该方法包括提供具有用于保持半导体衬底的压板的干蚀刻室。 在用于半导体衬底的干蚀刻工艺的蚀刻循环期间，源功率降低，腔室压力从第一压力降低到第二压力，并且压板功率从第一功率增加到第二功率。 通过该方法提供的衬底中的通孔可以具有用于流过其中的流体流通的折返轮廓。

    Fluid ejection device structures and methods therefor
    8.
    发明申请
    Fluid ejection device structures and methods therefor 有权

    公开(公告)号：US20060055724A1

    公开(公告)日：2006-03-16

    申请号：US11026839

    申请日：2004-12-30

    申请人： John Krawczyk ,  Andrew McNees

    发明人： John Krawczyk ,  Andrew McNees

    IPC分类号： B41J2/015

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1631

    摘要： Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.

    Method for dry etching fluid feed slots in a silicon substrate
    10.
    发明申请
    Method for dry etching fluid feed slots in a silicon substrate 有权
    在硅衬底中干蚀刻流体进料槽的方法

    公开(公告)号：US20070000863A1

    公开(公告)日：2007-01-04

    申请号：US11170895

    申请日：2005-06-30

    申请人： David Bernard ,  John Krawczyk ,  Andrew McNees

    发明人： David Bernard ,  John Krawczyk ,  Andrew McNees

    IPC分类号： C23F1/00 ,  G11B5/127 ,  H01L21/00 ,  B44C1/22

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B81B2201/052 ,  B81C1/00087

    摘要： A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrate. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.

    摘要翻译： 一种微加工半导体衬底以在其中形成一个或多个通孔的方法。 半导体衬底具有与器件侧相对的器件侧和流体侧。 该方法包括将p型掺杂材料扩散到半导体衬底的一个或多个通孔位置的器件侧，以通过衬底的厚度进行蚀刻。 然后用干蚀刻工艺将半导体衬底从衬底的器件侧蚀刻到衬底的流体侧，使得在衬底中形成具有折入轮廓的一个或多个通槽。