摘要:
Methods of forming a fluid channel in a semiconductor substrate may include providing a semiconductor substrate having a backside and a device side, wherein the device side is configured to secure ink ejecting devices thereon and applying a material layer to the backside of the semiconductor substrate. The method may further include providing a gray scale mask configured with a pattern corresponding to a fluid channel having a plurality of slots, exposing the material layer to sufficient light radiation energy through the gray scale mask and etching the exposed material layer and the semiconductor substrate through to the device side of the semiconductor substrate.
摘要:
A micro-fluid ejection assembly including a silicon substrate having accurately formed fluid paths therein. The fluid paths are formed by a deep reactive ion etching process conducted on a substrate having a surface characteristic before etching selected from the group consisting of a dielectric layer thickness of no more than about 5000 Angstroms, and a substantially dielectric material free pitted surface wherein a root mean square depth of surface pitting is less than about 500 Angstroms and a maximum surface pitting depth is no more than about 2500 Angstroms. Fluid paths in such substrates having improved flow characteristics for more reliable fluid ejection operations.
摘要:
A method of substantially simultaneously forming at least two fluid supply slots through a thickness of semiconductor substrate from a first surface to a second surface thereof. The method includes the steps of applying a photoresist layer to the first surface of the semiconductor substrate. The photoresist layer is patterned and developed using a gray scale mask for a first fluid supply slot. The semiconductor substrate is then reactive ion etched, to form the at least two fluid supply slots through the thickness of the substrate. The first fluid supply slot is substantially wider than the second fluid supply slot, and the first and second fluid supply slots are etched through the substrate at substantially the same rate.
摘要:
A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要:
A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要:
A method for fabricating an ejection chip of a fluid ejection device includes forming a drive circuitry layer on a substrate, fabricating at least one fluid ejection element on the substrate, forming at least one slot within a top portion of the substrate, filling each slot of the at least one slot with a protective material, grinding the substrate from a bottom portion of the substrate up to a predetermined height, removing the protective material from the each slot of the at least one slot, and laminating a flow feature layer and a nozzle plate over the substrate having the at least one slot.
摘要:
A method for fabricating a fluid ejection device includes forming a drive circuitry layer on a substrate, fabricating at least one fluid ejection element on a top portion of the substrate, grinding the substrate from a bottom portion of the substrate up to a predetermined height, etching the top portion of the substrate to configure at least one slot within the top portion of the substrate, depositing a layer of an etch-stop material over the top portion of the substrate while filling the at least one slot with the etch-stop material, etching the bottom portion of the substrate to configure at least one fluid feed trench within the bottom portion of the substrate, removing the layer of the etch-stop material from the top portion of the substrate, and laminating a flow feature layer and a nozzle plate as a single unit over the top portion of the substrate.
摘要:
A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要:
A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要:
A method for manufacturing an inkjet print cartridge and an inkjet cartridge produced thereby are disclosed. An inkjet print cartridge in accordance with one aspect includes a component of the inkjet print cartridge and an applied adhesive on at least a portion of the component, wherein the applied adhesive is formed from an adhesive having a rheology viscosity ratio ηi/ηmin of from 1.0 to less than 2.1. The method in accordance with one aspect includes applying an adhesive onto at least a portion of a component of an inkjet print cartridge at an application temperature, Tα, and heating the adhesive from an initial temperature, Ti, to a cure temperature for the adhesive, Tc. The adhesive has a rheology cure profile characterized by at least one of the following parameters: a) a rheology viscosity ratio ηi/ηmin of from 1.0 to less than 2.1, b) a temperature of the adhesive is approximately equal to a minimum viscosity temperature for the adhesive, Tηmin, within less than about 10 minutes from the start of the cure cycle, and c) viscosity of the adhesive increases within less than about 5 minutes from the start of the cure cycle.