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1.发明授权
公开(公告)号：US4851363A
公开(公告)日：1989-07-25
申请号：US171355
申请日：1988-03-21
IPC分类号： H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L29/78675 , H01L27/1214 , H01L29/42384 , Y10S438/967
摘要： A method of fabricating polycrystalline silicon thin film field effect transistors on low cost alkaline earth alumino-silicate glass substrates which can tolerate device processing temperatures of approximately 800.degree. C.
摘要翻译： 一种在低成本的碱土铝硅酸盐玻璃基板上制造多晶硅薄膜场效应晶体管的方法，其可以容忍大约800℃的器件处理温度。
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公开(公告)号：US07352355B2
公开(公告)日：2008-04-01
申请号：US10281863
申请日：2002-10-28
IPC分类号： G09G5/00
CPC分类号： G06F3/044 , G06F3/04886 , G06F2203/04809
摘要： A transparent overlay input device includes a transparent non-conductive substrate, a plurality of transparent conductive electrode pairs and a transparent non-conductive cover. The plurality of transparent conductive electrode pairs are formed on the substrate and each form a proximity sensitive region and include a first electrode that receives an input signal and a second electrode that provides an output signal. The first and second electrodes are capacitively coupled and the capacitance of the electrode pair changes when a conductive member, e.g., a user's finger, is located near the electrode pair. The transparent non-conductive cover is formed on the substrate over the electrode pairs.
摘要翻译： 透明覆盖输入装置包括透明非导电基板，多个透明导电电极对和透明非导电盖。 多个透明导电电极对形成在衬底上并且各自形成接近敏感区域，并且包括接收输入信号的第一电极和提供输出信号的第二电极。 第一和第二电极电容耦合，并且当导电构件（例如使用者的手指）位于电极对附近时，电极对的电容变化。 在电极对上的基板上形成透明非导电性盖。
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公开(公告)号：US07176885B2
公开(公告)日：2007-02-13
申请号：US10731644
申请日：2003-12-09
IPC分类号： G09G5/00
CPC分类号： G06F3/044 , G06F3/04886 , G06F2203/04809
摘要： An integrated switch-indicator unit includes a light emitting diode (LED) structure for providing a plurality of indicators and an overlay input device integrated with the LED structure. The overlay input device includes a non-conductive substrate and a plurality of conductive electrode pairs. The plurality of conductive electrode pairs are formed on the substrate and each form a proximity sensitive region and include a first electrode that receives an input signal and a second electrode that provides an output signal. The first and second electrodes are capacitively coupled and the capacitance of the electrode pair changes when a conductive member, e.g., a user's finger, is located near the electrode pair.
摘要翻译： 集成开关指示器单元包括用于提供多个指示器的发光二极管（LED）结构和与LED结构集成的覆盖输入设备。 覆盖输入装置包括非导电基板和多个导电电极对。 多个导电电极对形成在衬底上并且各自形成接近敏感区域，并且包括接收输入信号的第一电极和提供输出信号的第二电极。 第一和第二电极电容耦合，并且当导电构件（例如使用者的手指）位于电极对附近时，电极对的电容变化。
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公开(公告)号：US5541478A
公开(公告)日：1996-07-30
申请号：US205462
申请日：1994-03-04
CPC分类号： H01J31/15 , H01J29/467 , H01J2201/30
摘要： An active matrix transistor array substrate for a reconfigurable vacuum fluorescent display comprising a set of individually addressable pixels and an isolation grid surrounding each pixel of the set and isolating each pixel of the set from all other pixels of the set. The isolation grid is especially advantageous in a high density active matrix display for preventing one pixel that is switched off from inhibiting a neighboring pixel that is switched on from fully illuminating.
摘要翻译： 一种用于可重新配置的真空荧光显示器的有源矩阵晶体管阵列基板，包括一组单独可寻址的像素和围绕该组的每个像素的隔离栅格，并将该集合的每个像素与该集合的所有其它像素隔离。 隔离栅格在高密度有源矩阵显示器中是特别有利的，用于防止关闭的一个像素禁止从完全照明接通的相邻像素。
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公开(公告)号：US5130264A
公开(公告)日：1992-07-14
申请号：US763485
申请日：1991-09-23
IPC分类号： H01L21/762 , H01L21/336 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/84 , H01L29/78636 , H01L29/78675 , Y10S148/053 , Y10S148/15
摘要： A thin film field effect transistor has an island of polysilicon on the surface of a substrate, preferably of an insulating material. A layer of silicon dioxide is on the surface of the substrate and surrounds the polysilicon island. The silicon dioxide layer is of substantially uniform thickness and contacts the edge of the polysilicon island. A gate insulator layer, preferably of silicon dioxide, of substantially uniform thickness is on the surface of the polysilicon island. A conductive gate, preferably of doped polysilicon, is on the gate insulator layer and extends across a portion of the polysilicon island. The portions of the polysilicon island at opposite sides of the gate are doped to form the source and drain of the transistor. The transistor is formed by applying a layer of polysilicon on the surface of a substrate and applying a mask over the portion of the polysilicon layer which is to form the island. The uncovered portion of the polysilicon layer is converted to silicon dioxide, such as by heating in an atmosphere containing oxygen. After removing the mask, the gate insulator layer is formed over the surface of the polysilicon island, and the gate is formed over the gate insulator.
摘要翻译： 薄膜场效应晶体管在衬底的表面上具有优选为绝缘材料的多晶硅岛。 二氧化硅层位于衬底的表面上并且围绕多晶硅岛。 二氧化硅层具有基本均匀的厚度并且接触多晶硅岛的边缘。 在多晶硅岛的表面上具有基本均匀厚度的栅极绝缘体层，优选二氧化硅。 导电栅极，优选地是掺杂多晶硅，位于栅极绝缘体层上并延伸跨越多晶硅岛的一部分。 在栅极的相对侧的多晶硅岛的部分被掺杂以形成晶体管的源极和漏极。 通过在衬底的表面上施加多晶硅层并在将要形成岛的多晶硅层的部分上施加掩模来形成晶体管。 多晶硅层的未覆盖部分例如通过在含氧气氛中加热而转化为二氧化硅。 在去除掩模之后，在多晶硅岛的表面上形成栅极绝缘体层，并且栅极形成在栅极绝缘体上。
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公开(公告)号：US06809436B2
公开(公告)日：2004-10-26
申请号：US10389461
申请日：2003-03-14
申请人： Shih-Chia Chang , Marie I. Harrington , David Sturge Eddy , Michael W. Putty , Jeffrey M Kempisty
发明人： Shih-Chia Chang , Marie I. Harrington , David Sturge Eddy , Michael W. Putty , Jeffrey M Kempisty
IPC分类号： H02N100
CPC分类号： H02K3/26 , H02K33/02 , H02K33/16 , Y10T29/49009
摘要： An electromagnetic microactuator having a ferromagnetic substrate, preferably steel. A plurality of layers are deposited upon the substrate including an insulating layer, a seed layer and first and second photoresist layers. The first photoresist layer provides a coil well which defines the deposition location of a coil metal. The second photoresist layer provides central and peripheral core wells which define the deposition locations of a central core and a peripheral core, respectively. The second photoresist layer intersticially fills and protectively covers the coil.
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