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1.发明申请公开(公告)号：US20120097970A1
公开(公告)日：2012-04-26
申请号：US13232330
申请日：2011-09-14
CPC分类号： H01L23/3185 , H01L23/291 , H01L24/48 , H01L2224/05554 , H01L2224/48091 , H01L2224/8592 , H01L2924/00014 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
摘要翻译： 功率放大器和在功率放大器上涂覆氧化铝保护膜（Al 2 O 3）的方法在此公开。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此，ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。
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公开(公告)号：US20120091855A1
公开(公告)日：2012-04-19
申请号：US13232319
申请日：2011-09-14
CPC分类号： H01L41/0533 , C23C16/403 , C23C16/45525 , H03H3/08 , H03H9/02929
摘要： Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
摘要翻译： 本文公开了声波装置和在声波装置上涂覆氧化铝（Al 2 O 3）保护膜的方法。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在声波装置的表面上沉积非常薄的氧化铝层。 因此，均匀的膜不会使声波装置的操作显着失真。
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