公开(公告)号：US20090212044A1

公开(公告)日：2009-08-27

申请号：US11911520

申请日：2006-04-11

申请人： John Stanton ,  Sarah Barrington ,  David Anderson

发明人： John Stanton ,  Sarah Barrington ,  David Anderson

IPC分类号： H05B6/80 ,  A47J27/04 ,  A47J27/12

CPC分类号： A47J36/321

摘要： The present invention seeks to solve the above problem by providing a cooking appliance comprising a cooking appliance comprising a heating component; an area for receiving, in use, an ingredient storage device comprising a plurality of ingredient locations, each ingredient location storing an ingredient; control means; and a cooking region the appliance being arranged to selectively control, in use, in accordance with instructions provided by the control means, the cooking position of the ingredient locations such that the ingredient in a location is only heated when said location coincides with the cooking region, to bring, in use, the ingredients to readiness for consumption at the same time.

摘要翻译： 本发明旨在通过提供一种烹饪器具来解决上述问题，所述烹饪器具包括包括加热部件的烹饪器具; 用于在使用中接收包含多个成分位置的成分存储装置的区域，每个成分位置存储成分; 控制手段 以及烹饪区域，所述烹饪区域被布置成在使用中根据由所述控制装置提供的指令选择性地控制所述配料位置的烹饪位置，使得当所述位置与烹饪区域重合时，位置中的成分仅被加热 在使用中将成分同时投入使用。

公开(公告)号：US20060179738A1

公开(公告)日：2006-08-17

申请号：US11355424

申请日：2006-02-16

申请人： Craig Parrino ,  Ralph Hughes ,  Charles Robb ,  William Kardash ,  John Stanton

发明人： Craig Parrino ,  Ralph Hughes ,  Charles Robb ,  William Kardash ,  John Stanton

IPC分类号： E04C3/02

CPC分类号： E04C3/02 ,  E04C2003/023

摘要： A lintel is disclosed for supporting a course of blocks with a binder above an opening. The opening is defined between a first supporting surface and a second supporting surface. The course of blocks include a first bearing portion and a second bearing portion. The lintel comprises an elongated base having a first end and a second end for extending between the first supporting surface and the second supporting surface. The elongated base has a top portion and a bottom portion, a first side and a second side. A riser extends from the top portion of the elongated base for increasing the load capacity of the lintel. A first dam extends upwardly from the first side of the elongated base for pooling the binder adjacent to the first dam. A second dam extends upwardly from the second side of the elongated base for pooling the binder adjacent to the second dam. The first and second bearing portions of the course of blocks are positioned above the first and second dams with the pooled binder supporting the first and second bearing portions of the course of blocks.

摘要翻译： 公开了一种用于在开口上方支撑具有粘合剂的块的过程的楣。 开口限定在第一支撑表面和第二支撑表面之间。 块的过程包括第一轴承部分和第二轴承部分。 楣板包括细长基部，其具有第一端和第二端，用于在第一支撑表面和第二支撑表面之间延伸。 细长基部具有顶部和底部，第一侧和第二侧。 提升器从细长基部的顶部延伸，以增加楣板的承载能力。 第一个水坝从细长基部的第一侧向上延伸，以便将活页夹靠近第一个水坝。 第二个水坝从细长基座的第二侧向上延伸，以便将活页夹靠近第二个水坝。 块体的第一和第二轴承部分位于第一和第二坝的上方，其中汇集的活页夹支撑块体的第一和第二轴承部分。

公开(公告)号：US20080026536A1

公开(公告)日：2008-01-31

申请号：US11870543

申请日：2007-10-11

申请人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

发明人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

IPC分类号： H01L21/02

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process including, applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and forming interconnect metal layers.

摘要翻译： 使用HF / HCL清洁工艺提供半导体材料中的器件的形成。 在一个实施例中，该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模。 形成半导体器件的硅衬底的工作表面的至少一个开口。 用稀释的HF / HCL工艺清洗半导体器件。 HF / HCL方法包括在稀释的时间内稀释HF并在一定时间内稀释HCL。 在用稀释的HF / HCL工艺清洗之后，在硅衬底的工作表面的开口中的至少一个中形成硅化物接触点并形成互连金属层。

公开(公告)号：US08338914B2

公开(公告)日：2012-12-25

申请号：US12689376

申请日：2010-01-19

申请人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

发明人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

IPC分类号： H01L29/00

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.

摘要翻译： 使用HF / HCL清洁工艺提供半导体材料中的器件的形成。 在一个实施例中，该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模，形成半导体器件的硅衬底的工作表面的至少一个开口，并用稀释的HF / HCL过程。 HF / HCL方法包括在选择的时间内施用稀释的HF并将稀释的HCL施用一定时间。 用稀释的HF / HCL工艺清洗后，在至少一个开口的硅衬底的工作表面上形成硅化物接触点，并形成互连金属层。

公开(公告)号：US20100154573A1

公开(公告)日：2010-06-24

申请号：US12063481

申请日：2006-08-15

申请人： Nicholas Jackson ,  John Stanton

发明人： Nicholas Jackson ,  John Stanton

IPC分类号： F16H3/093

CPC分类号： F16H3/006 ,  F16H3/093 ,  F16H57/04 ,  F16H2003/0822 ,  F16H2003/0931 ,  F16H2200/0052 ,  Y10T74/19233

摘要： Various configurations of twin layshaft gear transmission are disclosed, typically having a large degree of common parts between single and dual clutch variants. In one embodiment reverse ratio is provided via an independent compound idler and is driven from a driving gear also associated with a forward speed ratio.

摘要翻译： 公开了双副轴齿轮传动装置的各种构造，通常在单离合器和双离合器变体之间具有大的共同部分。 在一个实施例中，反向比通过独立的复合惰轮提供，并且还由与前进速度比相关联的驱动齿轮驱动。

公开(公告)号：US07341958B2

公开(公告)日：2008-03-11

申请号：US11101891

申请日：2005-04-08

申请人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

发明人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

IPC分类号： H01L21/461

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and then forming interconnect metal layers.

摘要翻译： 在半导体材料中形成器件。 在一个实施例中，提供了形成半导体器件的方法。 该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模。 形成半导体器件的硅衬底的工作表面的至少一个开口。 用稀释的HF / HCL工艺清洗半导体器件。 在用稀释的HF / HCL工艺清洗之后，在硅衬底的工作表面的开口中的至少一个中形成硅化物接触结，然后形成互连金属层。

公开(公告)号：US07662692B2

公开(公告)日：2010-02-16

申请号：US11870543

申请日：2007-10-11

申请人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

发明人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

IPC分类号： H01L21/20

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process including, applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and forming interconnect metal layers.

摘要翻译： 使用HF / HCL清洁工艺提供半导体材料中的器件的形成。 在一个实施例中，该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模。 形成半导体器件的硅衬底的工作表面的至少一个开口。 用稀释的HF / HCL工艺清洗半导体器件。 HF / HCL方法包括在稀释的时间内稀释HF并在一定时间内稀释HCL。 在用稀释的HF / HCL工艺清洗之后，在硅衬底的工作表面的开口中的至少一个中形成硅化物接触点并形成互连金属层。

公开(公告)号：US20060166505A1

公开(公告)日：2006-07-27

申请号：US11101891

申请日：2005-04-08

申请人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

发明人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

IPC分类号： H01L29/786 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and then forming interconnect metal layers.

摘要翻译： 在半导体材料中形成器件。 在一个实施例中，提供了形成半导体器件的方法。 该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模。 形成半导体器件的硅衬底的工作表面的至少一个开口。 用稀释的HF / HCL工艺清洗半导体器件。 在用稀释的HF / HCL工艺清洗之后，在硅衬底的工作表面的开口中的至少一个中形成硅化物接触结，然后形成互连金属层。

公开(公告)号：US20050228322A1

公开(公告)日：2005-10-13

申请号：US10819650

申请日：2004-04-07

申请人： John Stanton

发明人： John Stanton

IPC分类号： A61F5/00 ,  A61L15/00 ,  A61L15/24

CPC分类号： A61L15/24 ,  C08L27/18

摘要： A device comprised of hydrophobic synthetic polymers used for cushioning and/or protecting a part from chaffing, pressure point injury, damage or discomfort from an orthopedic or non-orthopedic, cast, compression dressing, and/or brace, and to protect against a cast saw blade.

摘要翻译： 由疏水性合成聚合物组成的装置，其用于缓冲和/或保护部件免受来自整形外科或非矫形矫形器，压缩敷料和/或支架的磨损，压力伤害，损伤或不适，并防止铸件 锯片。

公开(公告)号：US20100117198A1

公开(公告)日：2010-05-13

申请号：US12689376

申请日：2010-01-19

申请人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

发明人： John T. Gasner ,  John Stanton ,  Dustin A. Woodbury ,  James D. Beasom

IPC分类号： H01L29/92 ,  H01L29/8605 ,  H01L23/52

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.

摘要翻译： 使用HF / HCL清洁工艺提供半导体材料中的器件的形成。 在一个实施例中，该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模，形成半导体器件的硅衬底的工作表面的至少一个开口，并用稀释的HF / HCL过程。 HF / HCL方法包括在选择的时间内施用稀释的HF并将稀释的HCL施用一定量的时间。 用稀释的HF / HCL工艺清洗后，在至少一个开口的硅衬底的工作表面上形成硅化物接触点，形成互连金属层。