公开(公告)号：US20080026536A1

公开(公告)日：2008-01-31

申请号：US11870543

申请日：2007-10-11

申请人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

发明人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

IPC分类号： H01L21/02

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process including, applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and forming interconnect metal layers.

摘要翻译： 使用HF / HCL清洁工艺提供半导体材料中的器件的形成。 在一个实施例中，该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模。 形成半导体器件的硅衬底的工作表面的至少一个开口。 用稀释的HF / HCL工艺清洗半导体器件。 HF / HCL方法包括在稀释的时间内稀释HF并在一定时间内稀释HCL。 在用稀释的HF / HCL工艺清洗之后，在硅衬底的工作表面的开口中的至少一个中形成硅化物接触点并形成互连金属层。

公开(公告)号：US20060166505A1

公开(公告)日：2006-07-27

申请号：US11101891

申请日：2005-04-08

申请人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

发明人： John Gasner ,  John Stanton ,  Dustin Woodbury ,  James Beasom

IPC分类号： H01L29/786 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02063 ,  H01L27/0802 ,  H01L28/24

摘要： The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and then forming interconnect metal layers.

摘要翻译： 在半导体材料中形成器件。 在一个实施例中，提供了形成半导体器件的方法。 该方法包括形成覆盖至少一层电阻材料的至少一个硬掩模。 形成半导体器件的硅衬底的工作表面的至少一个开口。 用稀释的HF / HCL工艺清洗半导体器件。 在用稀释的HF / HCL工艺清洗之后，在硅衬底的工作表面的开口中的至少一个中形成硅化物接触结，然后形成互连金属层。

公开(公告)号：US20060099823A1

公开(公告)日：2006-05-11

申请号：US11305987

申请日：2005-12-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L21/31

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.

公开(公告)号：US20070187837A1

公开(公告)日：2007-08-16

申请号：US11737395

申请日：2007-04-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： A semiconductor structure is provided. In one embodiment, the structure comprises at least one active device located in a substrate and directly under a bond pad. A conductor is located between the bond pad and the substrate. The conductor has a plurality of gaps filled with insulating material. The insulating material is harder than the conductor.

摘要翻译： 提供半导体结构。 在一个实施例中，该结构包括至少一个位于衬底中并且直接在接合焊盘下的有源器件。 导体位于接合焊盘和基板之间。 导体具有填充有绝缘材料的多个间隙。 绝缘材料比导体硬。

公开(公告)号：US20050042853A1

公开(公告)日：2005-02-24

申请号：US10698184

申请日：2003-10-31

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L23/485 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.

摘要翻译： 一个集成电路，具有一个接合焊盘下的电路。 在一个实施例中，集成电路包括衬底，顶部导电层，一个或多个中间导电层，绝缘材料和器件层。 顶部导电层具有至少一个焊盘和相对刚性材料的子层。 一个或多个中间导电层形成在顶部导电层和衬底之间。 绝缘材料层分离导电层。 此外，绝缘材料层的一层相对较硬，并且位于顶部导电层和最靠近顶部导电层的中间导电层之间。 器件形成在集成电路中。 此外，至少最靠近顶部导电层的中间导电层适用于接合焊盘下的选择器件的功能互连。

公开(公告)号：US20070184645A1

公开(公告)日：2007-08-09

申请号：US11737392

申请日：2007-04-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman Jr. ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman Jr. ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.

摘要翻译： 提供一种形成半导体结构的方法。 一种方法包括在衬底和接合衬垫之间形成器件区域。 在接合焊盘和具有间隙的器件区域之间形成导体。 使用比导体硬的绝缘材料填充间隙，以形成延伸穿过导体的相对硬的材料的支柱，并在导体和接合垫之间形成绝缘材料的绝缘层。