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公开(公告)号：US20110201509A1
公开(公告)日：2011-08-18
申请号：US13123395
申请日：2009-10-09
CPC分类号： B01L3/502761 , B01L7/00 , B01L2200/0663 , B01L2300/0877 , B01L2300/1805 , B01L2300/1833 , B01L2300/1861 , C12Q1/6816 , G01N21/6458 , Y10T436/143333 , C12Q2565/629 , C12Q2565/107
摘要： The invention relates to a method for analysis of the AT/GC ratio of DNA by stretching the DNA in nanochannels and performing melting mapping of the AT/GC ratio along the DNA molecule.
摘要翻译： 本发明涉及通过拉伸纳米通道中的DNA并进行沿着DNA分子的AT / GC比率的熔解图谱来分析DNA的AT / GC比例的方法。
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公开(公告)号：US10434512B2
公开(公告)日：2019-10-08
申请号：US15462023
申请日：2017-03-17
IPC分类号： C12Q1/68 , B01L3/00 , C12Q1/6816 , B01L7/00 , G01N21/64
摘要： The invention relates to a method for analysis of the AT/GC ratio of DNA by stretching the DNA in nanochannels and performing melting mapping of the AT/GC ratio along the DNA molecule.
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公开(公告)号：US09597687B2
公开(公告)日：2017-03-21
申请号：US13123395
申请日：2009-10-09
CPC分类号： B01L3/502761 , B01L7/00 , B01L2200/0663 , B01L2300/0877 , B01L2300/1805 , B01L2300/1833 , B01L2300/1861 , C12Q1/6816 , G01N21/6458 , Y10T436/143333 , C12Q2565/629 , C12Q2565/107
摘要： The invention relates to a method for analysis of the AT/GC ratio of DNA by stretching the DNA in nanochannels and performing melting mapping of the AT/GC ratio along the DNA molecule.
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公开(公告)号：US20130306476A1
公开(公告)日：2013-11-21
申请号：US13982892
申请日：2012-02-01
申请人： Lars Samuelson , Jonas Tegenfeldt
发明人： Lars Samuelson , Jonas Tegenfeldt
IPC分类号： B81B1/00
摘要： The invention relates to a nanowire device for manipulation of charged molecules, comprising a tubular nanowire with a through-going channel; a plurality of individually addressable wrap gate electrodes arranged around said tubular nanowire with a spacing between each two adjacent wrap gate electrodes and means for connecting the wrap gate electrodes to a voltage source. The invention further relates to a nanowire system comprising at least one nanowire device, and to a method for manipulating of charged molecules within a through-going channel of a tubular nanowire.
摘要翻译： 本发明涉及一种用于操纵带电分子的纳米线装置，包括具有穿通通道的管状纳米线; 多个可单独寻址的环形栅电极，其布置在所述管状纳米线周围，每两个相邻的封装栅电极之间具有间隔，以及用于将封装栅电极连接到电压源的装置。 本发明还涉及包含至少一个纳米线装置的纳米线系统以及用于操纵管状纳米线的穿通通道内的带电分子的方法。
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5.发明申请GRADIENT STRUCTURES INTERFACING MICROFLUIDICS AND NANOFLUIDICS, METHODS FOR FABRICATION AND USES THEREOF 有权接触微流控和纳米级的梯度结构，其制造方法及其用途公开(公告)号：US20070020772A1
公开(公告)日：2007-01-25
申请号：US11536178
申请日：2006-09-28
申请人： Han Cao , Jonas Tegenfeldt , Stephen Chou , Robert Austin
发明人： Han Cao , Jonas Tegenfeldt , Stephen Chou , Robert Austin
IPC分类号： H01L21/00
CPC分类号： G01N21/6486 , B01L3/502707 , B01L3/502715 , B01L3/502746 , B01L3/502761 , B01L2200/027 , B01L2200/0663 , B01L2200/12 , B01L2300/0654 , B01L2300/0896 , B01L2400/0415 , B01L2400/086 , B81B2201/058 , B81C1/00119 , B81C2201/0157 , B81C2201/0159 , B82Y30/00 , G01N33/48721 , G03F7/2008 , Y10T436/143333
摘要： The present invention relates to a device for interfacing nanofluidic and microfluidic components suitable for use in performing high throughput macromolecular analysis. Diffraction gradient lithography (DGL) is used to form a gradient interface between a microfluidic area and a nanofluidic area. The gradient interface area reduces the local entropic barrier to nanochannels formed in the nanofluidic area. In one embodiment, the gradient interface area is formed of lateral spatial gradient structures for narrowing the cross section of a value from the micron to the nanometer length scale. In another embodiment, the gradient interface area is formed of a vertical sloped gradient structure. Additionally, the gradient structure can provide both a lateral and vertical gradient.
摘要翻译： 本发明涉及适用于进行高通量大分子分析的纳米流体和微流体组分的界面装置。 衍射梯度光刻（DGL）用于在微流体区域和纳流体区域之间形成梯度界面。 梯度界面面积减小了在纳米流体区域形成的纳米通道的局部熵阻挡。 在一个实施例中，梯度界面区域由横向空间梯度结构形成，用于使从微米到纳米长度尺度的值的横截面变窄。 在另一个实施例中，梯度界面区域由垂直倾斜梯度结构形成。 此外，梯度结构可以提供横向和垂直梯度。
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