Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
    1.
    发明授权
    Heterogeneous semiconductor photonic integrated circuit with multiple offset heights 有权
    具有多个偏移高度的非均匀半导体光子集成电路

    公开(公告)号:US08891913B1

    公开(公告)日:2014-11-18

    申请号:US13546803

    申请日:2012-07-11

    IPC分类号: G02B6/00 G02F1/035

    摘要: Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance.Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).

    摘要翻译: 本发明的实施例描述了异质光子集成电路(PIC),其中第一硅区域与异质半导体材料分离第一距离,并且第二硅区域与异质半导体材料分离大于第一距离的第二距离 。 因此,可以将本发明的实施例描述为在异质PIC的异质区域中,使用硅波导的多个高度的硅波导或者硅和异种材料之间的多个偏移高度的其他结构(如本文所述)。

    Low loss heterogeneous optical waveguide transitions

    公开(公告)号:US09846285B2

    公开(公告)日:2017-12-19

    申请号:US13444635

    申请日:2012-04-11

    摘要: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

    Eyeglass
    3.
    外观设计
    Eyeglass 有权
    眼镜

    公开(公告)号:USD700933S1

    公开(公告)日:2014-03-11

    申请号:US29427769

    申请日:2012-07-23

    申请人: Jae Shin

    设计人: Jae Shin

    Eyeglass
    4.
    外观设计
    Eyeglass 有权

    公开(公告)号:USD675667S1

    公开(公告)日:2013-02-05

    申请号:US29412207

    申请日:2012-01-31

    申请人: Jae Shin

    设计人: Jae Shin

    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS

    公开(公告)号:US20180088290A1

    公开(公告)日:2018-03-29

    申请号:US15819521

    申请日:2017-11-21

    IPC分类号: G02B6/42 G02B6/30 G02B6/122

    摘要: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

    Eyeglass
    8.
    外观设计
    Eyeglass 有权

    公开(公告)号:USD705340S1

    公开(公告)日:2014-05-20

    申请号:US29408617

    申请日:2011-12-14

    申请人: Jae Shin

    设计人: Jae Shin

    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS
    9.
    发明申请
    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS 有权
    低损耗异质光波导过渡

    公开(公告)号:US20130272646A1

    公开(公告)日:2013-10-17

    申请号:US13444635

    申请日:2012-04-11

    IPC分类号: G02B6/12

    摘要: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

    摘要翻译: 本发明的实施例描述了包括具有锥形的III-V板的光学器件,该锥形包括第一区域和小于第一区域的第二区域。 所述第一区域接收光并限制所接收的光的光学模式; 因此,与现有技术方案相反,光学装置的所述III-V区域执行模式限制的光学功能。 本发明的实施例还描述了包括用于接收来自所述III-V板的光的硅板的光学器件,并且具有包括小于第一硅区的第一硅区和第二硅区的锥形。 所述第一区域接收光并限制所接收的光的光学模式。 因此,本发明的实施例描述了由混合区域到硅区域的低损耗跃迁产生的光学器件,对硅波导和III-V波导的设计的限制较少。