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    SIMULTANEOUS PROCESSING OF MULTIPLE PHOTONIC DEVICE LAYERS
    2.
    发明申请
    SIMULTANEOUS PROCESSING OF MULTIPLE PHOTONIC DEVICE LAYERS 有权
    多个光子器件层的同时处理

    公开(公告)号：US20140254978A1

    公开(公告)日：2014-09-11

    申请号：US13789440

    申请日：2013-03-07

    Applicant: Brian Koch ,  Erik Norberg ,  Alexander W. Fang ,  Jae Shin ,  Gregory Alan Fish

    Inventor： Brian Koch ,  Erik Norberg ,  Alexander W. Fang ,  Jae Shin ,  Gregory Alan Fish

    IPC: H01L21/822 ,  G02B6/13

    CPC classification number: G02B6/13 ,  G02B6/12 ,  G02B6/12004 ,  G02F1/0018 ,  G02F2001/212 ,  H01L21/822

    Abstract: Embodiments of the invention describe photonic integrated circuits (PICs) formed using simultaneous fabrication operations performed on photonic device layers. Each device of a PIC may be made from different optimized materials by growing the materials separately, cutting pieces of the different materials and bonding these pieces to a shared wafer. Embodiments of the invention bond photonic device layers so that shared (i.e., common) processing operations may be utilized to make more than one device simultaneously. Embodiments of the invention allow for simpler, more cost effective fabrication of PICs and improve photonic device performance and reliability.

    Abstract translation: 本发明的实施例描述了使用在光子器件层上执行的同时制造操作形成的光子集成电路（PIC）。 PIC的每个装置可以通过分别生长材料而不同的优化材料制成，切割不同材料的片并将这些片粘合到共享的晶片上。 本发明的实施例将光子器件层结合起来，使得可以利用共享的（即共同的）处理操作来同时制造多个器件。 本发明的实施例允许PIC的更简单，更经济有效的制造并且提高光子器件的性能和可靠性。

    Etch-selective bonding layer for hybrid photonic devices
    3.
    发明授权
    Etch-selective bonding layer for hybrid photonic devices 有权
    用于混合光子器件的蚀刻选择性结合层

    公开(公告)号：US08774582B1

    公开(公告)日：2014-07-08

    申请号：US13461634

    申请日：2012-05-01

    Applicant: Matthew Jacob-Mitos ,  Gregory Alan Fish ,  Alexander W. Fang

    Inventor： Matthew Jacob-Mitos ,  Gregory Alan Fish ,  Alexander W. Fang

    IPC: G02B6/10 ,  G02B6/00 ,  H01L21/76 ,  H01L21/46 ,  H01L21/30

    CPC classification number: H01S5/22 ,  G02F1/025 ,  G02F2201/07 ,  G02F2202/102 ,  G02F2202/105 ,  H01L21/187 ,  H01S5/3213 ,  H01S5/3214

    Abstract: “Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device.Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected.

    Abstract translation: “混合光子器件”描述了其中光学部分即光学模式包括硅和III-V半导体区域的器件，因此半导体材料的折射率和结合层区域的折射率直接影响 光学功能的设备。 现有技术的装置利用与III-V衬底相同材料的光学柔顺层; 然而，在接合过程的最后一个子过程中，基底必须被酸去除。 这些酸可以蚀刻到结合层中，导致缺陷在接合材料的界面处传播，不利地影响器件的光学模式形状和传播损耗。 本发明的实施例利用不受接合工艺的最后阶段（例如，衬底移除）的影响的半导体蚀刻选择性接合层，并且因此保护接合界面层免受影响。

    PHOTONIC FLEXIBLE INTERCONNECT
    4.
    发明申请
    PHOTONIC FLEXIBLE INTERCONNECT 审中-公开
    光电柔性互连

    公开(公告)号：US20130230274A1

    公开(公告)日：2013-09-05

    申请号：US13412441

    申请日：2012-03-05

    Applicant: GREGORY ALAN FISH

    Inventor： GREGORY ALAN FISH

    IPC: G02B6/122

    CPC classification number: G02B6/421 ,  G02B6/1221 ,  G02B6/305

    Abstract: Embodiments of the invention describe a silicon photonic interconnect, formed from an SOI substrate, having a waveguide for receiving optical data from an integrated circuit. Said photonic interconnect may comprise a flexible interconnect including a polymer layer disposed on the SOI substrate. Said photonic interconnect may include an optical fiber component to send/receive optical data to/from optical components or devices.The waveguide of the silicon photonic interconnect may be formed for butt or evanescent coupling to the integrated circuit, may include an optical grating for coupling to the integrated circuit, or may include an etched taper for providing an adiabatic transition to a waveguide of the integrated circuit. The optical fiber interconnect component may be a taper to create large, fiber matched mode sizes or v-groove arrangements to enable alignment of optical fibers, or may include vertical couplers or evanescent couplers mode matched to optical fibers or fiber receptacles.

    Abstract translation: 本发明的实施例描述了由SOI衬底形成的硅光子互连，其具有用于从集成电路接收光学数据的波导。 所述光子互连可以包括柔性互连，其包括设置在SOI衬底上的聚合物层。 所述光子互连可以包括用于向/从光学部件或设备发送/接收光学数据的光纤部件。 硅光子互连的波导可以形成用于与集成电路的对接或者渐逝耦合，可以包括用于耦合到集成电路的光栅，或者可以包括用于提供对集成电路的波导的绝热过渡的蚀刻锥形 。 光纤互连部件可以是锥形，以产生大的光纤匹配模式尺寸或V形槽布置，以使得光纤对准，或者可以包括与光纤或光纤插座匹配的垂直耦合器或渐逝耦合器模式。

    Low loss heterogeneous optical waveguide transitions
    5.
    发明授权
    Low loss heterogeneous optical waveguide transitions 有权

    公开(公告)号：US09846285B2

    公开(公告)日：2017-12-19

    申请号：US13444635

    申请日：2012-04-11

    Applicant: Gregory Alan Fish ,  Jae Shin

    Inventor： Gregory Alan Fish ,  Jae Shin

    IPC: G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B6/122

    CPC classification number: G02B6/4203 ,  G02B6/1228 ,  G02B6/305 ,  G02B2006/12061 ,  G02B2006/12078

    Abstract: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

    DENSELY ARRAYED WAVEGUIDES WITH LOW CROSS-COUPLING
    8.
    发明申请
    DENSELY ARRAYED WAVEGUIDES WITH LOW CROSS-COUPLING 有权
    具有低交叉耦合的密集阵列波形

    公开(公告)号：US20160099546A1

    公开(公告)日：2016-04-07

    申请号：US14870225

    申请日：2015-09-30

    Applicant: Erik Johan Norberg ,  Brian Koch ,  Gregory Alan Fish ,  Hyundai Park ,  Jared Bauters

    Inventor： Erik Johan Norberg ,  Brian Koch ,  Gregory Alan Fish ,  Hyundai Park ,  Jared Bauters

    IPC: H01S5/06 ,  H01S5/10 ,  H01S5/068 ,  G02B6/12 ,  G02B6/293

    CPC classification number: H01S5/0612 ,  G02B6/12009 ,  G02B6/29344 ,  G02B6/2938 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/06821 ,  H01S5/14

    Abstract: Described herein are lasers comprising an output port to output an optical signal, a plurality of waveguide segments forming an optical cavity length, and a resonant optical cavity comprising the optical cavity length, a gain medium included in the resonant optical cavity to amplify the optical signal, and a heating element disposed near at least two of the plurality of waveguide segments, the heating element controllable to adjust the phase of the optical signal by heating the waveguide segments. Described herein are optical devices comprising a first plurality of ports to output a plurality of optical signals, a second plurality of ports to receive the plurality of optical signals, and a plurality of coupling waveguides. The plurality of waveguide may comprise a pair of adjacent waveguides separated by a first distance, each of the pair of adjacent waveguides comprising a different width.

    Abstract translation: 这里描述的是包括用于输出光信号的输出端口，形成光腔长度的多个波导段和包括光腔长度的谐振光腔的激光器，包括在谐振光腔中的增益介质，以放大光信号 以及设置在所述多个波导段中的至少两个附近的加热元件，所述加热元件可控制以通过加热所述波导段来调节所述光信号的相位。 这里描述的是包括用于输出多个光信号的第一多个端口，用于接收多个光信号的第二多个端口以及多个耦合波导的光学装置。 多个波导可以包括由第一距离分开的一对相邻波导，该对相邻波导中的每一个包括不同的宽度。

    TUNABLE LASER WITH INTEGRATED WAVELENGTH REFERENCE
    9.
    发明申请
    TUNABLE LASER WITH INTEGRATED WAVELENGTH REFERENCE 有权
    具有集成波长参考的可激光激光

    公开(公告)号：US20130083815A1

    公开(公告)日：2013-04-04

    申请号：US13249753

    申请日：2011-09-30

    Applicant: ALEXANDER W. FANG ,  Gregory Alan Fish ,  John Hutchinson

    Inventor： ALEXANDER W. FANG ,  Gregory Alan Fish ,  John Hutchinson

    IPC: H01S3/10

    CPC classification number: H01S5/068 ,  H01S3/0014 ,  H01S3/0637 ,  H01S3/0675 ,  H01S3/10015 ,  H01S3/10023 ,  H01S3/1003 ,  H01S3/1055 ,  H01S3/1305 ,  H01S5/021 ,  H01S5/02453 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/0612 ,  H01S5/1028 ,  H01S5/1209 ,  H01S5/142

    Abstract: In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices. For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters on silicon form a tunable laser with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.

    Abstract translation: 在现有技术中，使用基于硅的可调谐环形滤波器和基于III-V半导体的增益区域的可调谐激光器需要独立形成的基于硅和III-V半导体的光学元件的异质集成，导致需要复杂制造工艺的大型光学器件 （例如，密封包装以联接形成在不同基底上的装置，元件的精确对准等）。 本发明的实施例通过使用杂化的III-V /硅增益区域和诸如硅波长滤波器和硅波长参考的硅光学组件来消除对体光学元件和气密封装的需要，从而减小了尺寸和制造复杂度 可调谐激光装置。 例如，本发明的实施例可以利用具有硅上的环形滤波器的混合III-V /硅增益区域形成具有来自III-V区域的有效增益的可调谐激光器，同时提供宽的可调谐性，有效的可调谐性以及由于 硅环的性质。

    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS
    10.
    发明申请
    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS 审中-公开

    公开(公告)号：US20180088290A1

    公开(公告)日：2018-03-29

    申请号：US15819521

    申请日：2017-11-21

    Applicant: Gregory Alan Fish ,  Jae Shin

    Inventor： Gregory Alan Fish ,  Jae Shin

    IPC: G02B6/42 ,  G02B6/30 ,  G02B6/122

    CPC classification number: G02B6/4203 ,  G02B6/1228 ,  G02B6/305 ,  G02B2006/12061 ,  G02B2006/12078

    Abstract: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

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