利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.03 秒)

    Methods of fabricating semiconductor devices having a double metal salicide layer
    3.
    发明授权
    Methods of fabricating semiconductor devices having a double metal salicide layer 有权
    制造具有双金属硅化物层的半导体器件的方法

    公开(公告)号：US07666786B2

    公开(公告)日：2010-02-23

    申请号：US11756903

    申请日：2007-06-01

    申请人： Jong-ho Yun ,  Gil-heyun Choi ,  Seong-hwee Cheong ,  Sug-woo Jung ,  Hyun-su Kim ,  Woong-hee Sohn

    发明人： Jong-ho Yun ,  Gil-heyun Choi ,  Seong-hwee Cheong ,  Sug-woo Jung ,  Hyun-su Kim ,  Woong-hee Sohn

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L29/665

    摘要： A semiconductor device is fabricated by forming a gate electrode structure, comprising a gate oxide layer pattern, a polysilicon layer pattern, and sidewall spacers on a silicon substrate, forming source/drain regions on both sides of the gate electrode structure in the silicon substrate, depositing a physical vapor deposition (PVD) cobalt layer on the gate electrode structure using PVD, depositing a chemical vapor deposition (CVD) cobalt layer on the PVD cobalt layer using CVD, annealing the silicon substrate to react the PVD and CVD cobalt layers with polysilicon on an upper surface of the gate electrode structure, stripping at least a portion of the PVD cobalt layer and the CVD cobalt layer that has not reacted, and annealing the silicon substrate after stripping the at least the portion of the PVD cobalt layer and the CVD cobalt layer.

    摘要翻译： 通过在硅衬底上形成栅极电极结构，形成栅极氧化层图案，多晶硅层图案和侧壁间隔物来制造半导体器件，在硅衬底中的栅电极结构的两侧形成源极/漏极区域， 使用PVD在栅电极结构上沉积物理气相沉积（PVD）钴层，使用CVD在PVD钴层上沉积化学气相沉积（CVD）钴层，退火硅衬底以使PVD和CVD钴层与多晶硅反应 在栅电极结构的上表面上，剥离至少一部分PVD钴层和未反应的CVD钴层，以及在剥离至少一部分PVD钴层和CVD之后退火硅衬底 钴层。

    METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING A DOUBLE METAL SALICIDE LAYER
    4.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING A DOUBLE METAL SALICIDE LAYER 有权
    制备具有双金属盐酸盐层的半导体器件的方法

    公开(公告)号：US20070224765A1

    公开(公告)日：2007-09-27

    申请号：US11756903

    申请日：2007-06-01

    申请人： Jong-ho Yun ,  Gil-heyun Choi ,  Seong-hwee Cheong ,  Sug-woo Jung ,  Hyun-su Kim ,  Woong-hee Sohn

    发明人： Jong-ho Yun ,  Gil-heyun Choi ,  Seong-hwee Cheong ,  Sug-woo Jung ,  Hyun-su Kim ,  Woong-hee Sohn

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L29/665

    摘要： A semiconductor device is fabricated by forming a gate electrode structure, comprising a gate oxide layer pattern, a polysilicon layer pattern, and sidewall spacers on a silicon substrate, forming source/drain regions on both sides of the gate electrode structure in the silicon substrate, depositing a physical vapor deposition (PVD) cobalt layer on the gate electrode structure using PVD, depositing a chemical vapor deposition (CVD) cobalt layer on the PVD cobalt layer using CVD, annealing the silicon substrate to react the PVD and CVD cobalt layers with polysilicon on an upper surface of the gate electrode structure, stripping at least a portion of the PVD cobalt layer and the CVD cobalt layer that has not reacted, and annealing the silicon substrate after stripping the at least the portion of the PVD cobalt layer and the CVD cobalt layer.

    摘要翻译： 通过在硅衬底上形成栅极电极结构，形成栅极氧化层图案，多晶硅层图案和侧壁间隔物来制造半导体器件，在硅衬底中的栅电极结构的两侧形成源极/漏极区域， 使用PVD在栅电极结构上沉积物理气相沉积（PVD）钴层，使用CVD在PVD钴层上沉积化学气相沉积（CVD）钴层，退火硅衬底以使PVD和CVD钴层与多晶硅反应 在栅电极结构的上表面上剥离至少一部分PVD钴层和未反应的CVD钴层，以及在剥离至少部分PVD钴层和CVD之后使硅衬底退火 钴层。

    Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same
    7.
    发明授权
    Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same 有权
    形成二硅化钴层的方法和使用其制造半导体器件的方法

    公开(公告)号：US07312150B2

    公开(公告)日：2007-12-25

    申请号：US10936853

    申请日：2004-09-09

    申请人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

    发明人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

    IPC分类号： H01L21/44

    CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76889 ,  H01L29/665 ,  H01L29/78

    摘要： A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1 is H or CH3, and R2 is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3 torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.

    摘要翻译： 提供了形成二硅化钴层的方法以及使用其制造半导体器件的方法。 形成二硅化钴层的方法包括使用金属有机化学气相沉积在半导体器件的至少硅表面上形成钴层，通过提供具有式CO 2（CO）2的钴前体， （R 1-C≡CR2），其中R 1是H或CH 3， / SUB，R 2是作为源气体的氢，叔丁基，苯基，甲基或乙基。 然后，在钴层上形成覆盖层。 然后在超高真空下，例如在10 -9 -10 -3托的压力下，在半导体器件上进行第一热处理，以使硅 与钴。 然后去除在第一热处理期间未反应的钴和覆盖层，并在半导体器件上进行第二热处理以形成二硅化钴（CoSi 2 N 2）层。

    Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same
    9.
    发明申请
    Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same 有权
    形成二硅化钴层的方法和使用其制造半导体器件的方法

    公开(公告)号：US20050136659A1

    公开(公告)日：2005-06-23

    申请号：US10936853

    申请日：2004-09-09

    申请人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

    发明人： Jong-ho Yun ,  Gil-heyun Choi ,  Sang-bom Kang ,  Woong-hee Sohn ,  Hyun-su Kim

    IPC分类号： H01L21/24 ,  H01L21/285 ,  H01L21/324 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L29/78

    CPC分类号： H01L21/324 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76889 ,  H01L29/665 ,  H01L29/78

    摘要： A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1 is H or CH3, and R2 is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3 torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.

    摘要翻译： 提供了形成二硅化钴层的方法以及使用其制造半导体器件的方法。 形成二硅化钴层的方法包括使用金属有机化学气相沉积在半导体器件的至少硅表面上形成钴层，通过提供具有式CO 2（CO）2的钴前体， （R 1-C≡CR2），其中R 1是H或CH 3， / SUB，R 2是作为源气体的氢，叔丁基，苯基，甲基或乙基。 然后，在钴层上形成覆盖层。 然后在超高真空下，例如在10 -9 -10 -3托的压力下，在半导体器件上进行第一热处理，以使硅 与钴。 然后去除在第一热处理期间未反应的钴和覆盖层，并在半导体器件上进行第二热处理以形成二硅化钴（CoSi 2 N 2）层。