摘要:
Disclosed herein are an artificial ear and a method for detecting the direction of a sound source using the same. The artificial ear includes a plurality of microphones; and one or more structures disposed between the plurality of microphones. In the artificial ear, the amplitudes of output signals respectively inputted to the plurality of microphones are designed to be different based on the direction of a sound source. The method for detecting the direction of a sound source includes receiving output signals with different amplitudes from a plurality of microphones; determining front-back discrimination of the sound source from a difference between the amplitudes of the output signals of the microphones; and determining an angle corresponding to the position of the sound source from a difference between delay times of the output signals of the microphones.
摘要:
Disclosed herein are an artificial ear and a method for detecting the direction of a sound source using the same. The artificial ear includes a plurality of microphones; and one or more structures disposed between the plurality of microphones. In the artificial ear, the amplitudes of output signals respectively inputted to the plurality of microphones are designed to be different based on the direction of a sound source. The method for detecting the direction of a sound source includes receiving output signals with different amplitudes from a plurality of microphones; determining front-back discrimination of the sound source from a difference between the amplitudes of the output signals of the microphones; and determining an angle corresponding to the position of the sound source from a difference between delay times of the output signals of the microphones.
摘要:
Disclosed herein is a signal processing apparatus and method for removing a reflected wave generated by a robot platform. The signal processing apparatus includes a transfer function measuring unit for measuring an inter-channel transfer function (IcTF) from signals of a plurality of channels; an impulse response obtaining unit for obtaining an inter-channel impulse response (IcIR) from the IcTF measured by the transfer function measuring unit; and reflected wave removing unit for removing the reflected wave by differentiating a direct wave directly generated by a sound source and the reflected wave with a time delay from the IcIR obtained by the impulse response obtaining unit. The signal processing method of removing a reflected wave includes measuring an IcTF from signals of a plurality of channels; obtaining an IcIR from the measured IcTF; and removing the reflected wave by differentiating a direct wave directly generated by a sound source and a the reflected wave with a time delay from the obtained IcIR.
摘要:
Disclosed herein is a signal processing apparatus and method for removing a reflected wave generated by a robot platform. The signal processing apparatus includes a transfer function measuring unit for measuring an inter-channel transfer function (IcTF) from signals of a plurality of channels; an impulse response obtaining unit for obtaining an inter-channel impulse response (IcIR) from the IcTF measured by the transfer function measuring unit; and reflected wave removing unit for removing the reflected wave by differentiating a direct wave directly generated by a sound source and the reflected wave with a time delay from the IcIR obtained by the impulse response obtaining unit. The signal processing method of removing a reflected wave includes measuring an IcTF from signals of a plurality of channels; obtaining an IcIR from the measured IcTF; and removing the reflected wave by differentiating a direct wave directly generated by a sound source and a the reflected wave with a time delay from the obtained IcIR.
摘要:
A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles.
摘要:
A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles.