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    Apparatus and method for allocating frequency resource in a communication system
    1.
    发明授权
    Apparatus and method for allocating frequency resource in a communication system 有权
    在通信系统中分配频率资源的装置和方法

    公开(公告)号：US08195174B2

    公开(公告)日：2012-06-05

    申请号：US12061993

    申请日：2008-04-03

    申请人： Joo-Hyun Lee ,  Sang-Boh Yun ,  Jong-Hyeuk Lee ,  Dae-Sik Hong ,  Tae-Hoon Kwon

    发明人： Joo-Hyun Lee ,  Sang-Boh Yun ,  Jong-Hyeuk Lee ,  Dae-Sik Hong ,  Tae-Hoon Kwon

    IPC分类号： H04W72/00

    CPC分类号： H04W52/346 ,  H04W72/048

    摘要： A method and apparatus for allocating resources for a mobile station in a communication system is provided. The method includes determining if a mobile station within a cell is located in one of a first region corresponding to a cell center, a third region corresponding to a cell edge, and a second region corresponding to an area between the first and third regions, allocating frequency resources within an entire frequency band to the mobile station when the mobile station is located in the first region, wherein the entire frequency band comprises at least a first frequency band and a second frequency band, allocating frequency resources within the first frequency band to the mobile station when the mobile station is located in the third region, and allocating frequency resources within the second frequency band to the mobile station when the mobile station is located in the second region.

    摘要翻译： 提供了一种在通信系统中为移动台分配资源的方法和装置。 该方法包括：确定小区内的移动台是否位于对应于小区中心的第一区域，对应于小区边缘的第三区域和对应于第一和第三区域之间的区域的第二区域中的一个中，分配 当所述移动站位于所述第一区域中时，所述整个频带内的频率资源到所述移动站，其中，所述整个频带包括至少第一频带和第二频带，将所述第一频带内的频率资源分配给所述第一频带 当所述移动站位于所述第三区域时，将所述第二频带内的频率资源分配给所述移动站。

    Methods of manufacturing complementary bipolar transistors
    4.
    发明授权
    Methods of manufacturing complementary bipolar transistors 失效
    制造互补双极晶体管的方法

    公开(公告)号：US06573146B2

    公开(公告)日：2003-06-03

    申请号：US09978521

    申请日：2001-10-16

    申请人： Jong-Hwan Kim ,  Tae-Hoon Kwon ,  Cheol-Joong Kim ,  Suk-Kyun Lee

    发明人： Jong-Hwan Kim ,  Tae-Hoon Kwon ,  Cheol-Joong Kim ,  Suk-Kyun Lee

    IPC分类号： H01L218228

    CPC分类号： H01L21/8226 ,  H01L21/8224 ,  H01L21/8228 ,  H01L21/82285 ,  H01L27/0233 ,  H01L27/0647 ,  H01L27/0826

    摘要： A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral pnp bipolar transistor has an emitter region and a collector region which includes high-density regions and low-density regions, and the emitter region is formed in an n type tub region. In the integrated injection logic circuit, collector regions are surrounded by a high-density p type region, and low-density p type regions are formed under the collector regions. The diffusion capacitor and the polysilicon capacitor are formed in one substrate. The diffusion regions except the regions formed by diffusing the impurities in the polysilicon resistors into the epitaxial layer are formed before forming the polysilicon resistors, and polysilicon electrodes are formed along with the polysilicon resistors.

    摘要翻译： 公开了具有横向npn双极晶体管，垂直和侧向pnp双极晶体管，集成注入逻辑，扩散电容器，多晶硅电容器和多晶硅电阻器的互补双极晶体管。 横向pnp双极晶体管具有包括高密度区域和低密度区域的发射极区域和集电极区域，并且发射极区域形成在n型槽区域中。 在集成注入逻辑电路中，集电极区域被高密度p型区域包围，在集电极区域形成低密度p型区域。 扩散电容器和多晶硅电容器形成在一个衬底中。 在形成多晶硅电阻器之前形成除了将多晶硅电阻器中的杂质扩散到外延层中形成的区域之外的扩散区域，并且多晶硅电极与多晶硅电阻器一起形成。

    Integrated injection logic devices including injection regions and tub or sink regions
    5.
    发明授权
    Integrated injection logic devices including injection regions and tub or sink regions 有权
    集成注入逻辑器件，包括注入区域和槽或汇点区域

    公开(公告)号：US06326674B1

    公开(公告)日：2001-12-04

    申请号：US09451623

    申请日：1999-11-30

    申请人： Jong-Hwan Kim ,  Tae-Hoon Kwon ,  Cheol-Joong Kim ,  Suk-Kyun Lee

    发明人： Jong-Hwan Kim ,  Tae-Hoon Kwon ,  Cheol-Joong Kim ,  Suk-Kyun Lee

    IPC分类号： H01L29735

    CPC分类号： H01L21/8226 ,  H01L21/8224 ,  H01L21/8228 ,  H01L21/82285 ,  H01L27/0233 ,  H01L27/0647 ,  H01L27/0826

    摘要： A complementary bipolar transistor having a lateral npn bipolar transistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral pnp bipolar transistor has an emitter region and a collector region which includes high-density regions and low-density regions, and the emitter region is formed in an n type tub region. In the integrated injection logic circuit, collector regions are surrounded by a high-density p type region, and low-density p type regions are formed under the collector regions. The diffusion capacitor and the polysilicon capacitor are formed in one substrate. The diffusion regions except the regions formed by diffusing the impurities in the polysilicon resistors into the epitaxial layer are formed before forming the polysilicon resistors, and polysilicon electrodes are formed along with the polysilicon resistors.

    摘要翻译： 公开了具有横向npn双极晶体管，垂直和横向pnp双极晶体管，集成注入逻辑，扩散电容器，多晶硅电容器和多晶硅电阻器的互补双极晶体管。 横向pnp双极晶体管具有包括高密度区域和低密度区域的发射极区域和集电极区域，并且发射极区域形成在n型槽区域中。 在集成注入逻辑电路中，集电极区域被高密度p型区域包围，在集电极区域形成低密度p型区域。 扩散电容器和多晶硅电容器形成在一个衬底中。 在形成多晶硅电阻器之前形成除了将多晶硅电阻器中的杂质扩散到外延层中形成的区域之外的扩散区域，并且多晶硅电极与多晶硅电阻器一起形成。

    LIGHT EMISSION DRIVER FOR DISPLAY DEVICE, DISPLAY DEVICE AND DRIVING METHOD THEREOF
    6.
    发明申请
    LIGHT EMISSION DRIVER FOR DISPLAY DEVICE, DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
    用于显示设备的光排放驱动器，显示设备及其驱动方法

    公开(公告)号：US20140111503A1

    公开(公告)日：2014-04-24

    申请号：US13903831

    申请日：2013-05-28

    申请人： Tae-Hoon Kwon ,  Ji-Hyun Ka

    发明人： Tae-Hoon Kwon ,  Ji-Hyun Ka

    IPC分类号： G09G3/32

    CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0223 ,  G09G2320/0233

    摘要： A light emission driver for a display device is disclosed. In one aspect, the driver includes a first node to which first and second light emitting power source voltages are applied according to respective clock signals. The driver also includes a second node to which the first and third light emitting power source voltages are applied according to the respective clock signals. The driver further includes first and second transistors respectively turned on by the first and second nodes and respectively transmitting the second and first light emitting power source voltages to a light emitting signal output terminal, respectively.

    摘要翻译： 公开了一种用于显示装置的发光驱动器。 在一个方面，驱动器包括根据各个时钟信号施加第一和第二发光电源电压的第一节点。 驱动器还包括根据各个时钟信号施加第一和第三发光电源电压的第二节点。 驱动器还包括分别由第一和第二节点接通并分别将第二和第一发光电源电压发送到发光信号输出端的第一和第二晶体管。

    Complementary bipolar transistors
    7.
    发明授权
    Complementary bipolar transistors 失效
    互补双极晶体管

    公开(公告)号：US06005283A

    公开(公告)日：1999-12-21

    申请号：US949223

    申请日：1997-10-10

    申请人： Jong-Hwan Kim ,  Tae-Hoon Kwon ,  Cheol-Joong Kim ,  Suk-Kyun Lee

    发明人： Jong-Hwan Kim ,  Tae-Hoon Kwon ,  Cheol-Joong Kim ,  Suk-Kyun Lee

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8224 ,  H01L21/8226 ,  H01L21/8228 ,  H01L27/02 ,  H01L27/06 ,  H01L27/08 ,  H01L27/082 ,  H01L29/732 ,  H01L27/102 ,  H01L29/735

    CPC分类号： H01L21/8226 ,  H01L21/8224 ,  H01L21/8228 ,  H01L21/82285 ,  H01L27/0233 ,  H01L27/0647 ,  H01L27/0826

    摘要： A complementary bipolar transistor having a lateral npn bipolar trasistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral pnp bipolar transistor has an emitter region and a collector region which includes high-density regions and low-density regions, and the emitter region is formed in an n type tub region. In the integrated injection logic circuit, collector regions are surrounded by a high-density p type region, and low-density p type regions are formed under the collector regions. The diffusion capacitor and the polysilicon capacitor are formed in one substrate. The diffusion regions except the regions formed by diffusing the impurities in the polysilicon resistors into the epitaxial layer are formed before forming the polysilicon resistors, and polysilicon electrodes are formed along with the polysilicon resistors.

    摘要翻译： 公开了具有横向npn双极性trasistor，垂直和横向pnp双极晶体管，集成注入逻辑，扩散电容器，多晶硅电容器和多晶硅电阻器的互补双极晶体管。 横向pnp双极晶体管具有包括高密度区域和低密度区域的发射极区域和集电极区域，并且发射极区域形成在n型槽区域中。 在集成注入逻辑电路中，集电极区域被高密度p型区域包围，在集电极区域形成低密度p型区域。 扩散电容器和多晶硅电容器形成在一个衬底中。 在形成多晶硅电阻器之前形成除了将多晶硅电阻器中的杂质扩散到外延层中形成的区域之外的扩散区域，并且多晶硅电极与多晶硅电阻器一起形成。