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公开(公告)号:US20110259366A1
公开(公告)日:2011-10-27
申请号:US12867245
申请日:2009-02-11
申请人: Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
发明人: Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
IPC分类号: B08B7/00 , H01L21/265 , B08B5/00
CPC分类号: H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
摘要翻译: 使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分,通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻 。 还描述了使用诸如XeFx,WFx,AsFx,PFx和TaFx的反应性气体,其中x具有化学计量学上适当的值或值范围,用于清除离子注入器或植入物的组分的原位或非原生境 清洁布置,在环境温度,升高的温度或等离子体条件下。 在特定的反应性清洁剂中,BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。 还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法,包括使所述前沿与清洁气体接触,其中所述清洁气体与所述沉积物化学反应。 还描述了改进离子注入系统的性能和延长寿命的方法,包括使阴极与气体混合物接触。