公开(公告)号：US20130288460A1

公开(公告)日：2013-10-31

申请号：US13864849

申请日：2013-04-17

申请人： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

发明人： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

IPC分类号： H01L21/02

CPC分类号： H01L21/0262 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

摘要翻译： 本发明的实施例一般涉及在其中处理衬底的腔室和方法。 这些室通常包括单独的工艺气体和吹扫气体区域。 处理气体区域和吹扫气体区域各自具有相应的气体入口和气体出口。 所述方法通常包括将衬底定位在腔室内的衬底支撑件上。 衬底支架的平面限定了工艺气体区域和吹扫气体区域之间的边界。 吹扫气体通过至少一个吹扫气体入口被引入净化气体区域中，并且使用至少一个净化气体出口从净化气体区域中除去。 工艺气体通过至少一个工艺气体入口引入工艺气体区域，并通过至少一个工艺气体出口从工艺气体区域中移出。 工艺气体被热分解以在衬底上沉积材料。

公开(公告)号：US20140199785A1

公开(公告)日：2014-07-17

申请号：US13796169

申请日：2013-03-12

申请人： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

发明人： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

IPC分类号： H01L21/67 ,  H01L21/66

CPC分类号： C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

摘要翻译： 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。