公开(公告)号：US20170336565A1

公开(公告)日：2017-11-23

申请号：US15282728

申请日：2016-09-30

申请人： Judson D. Ryckman ,  Harel Frish ,  George A. Ghiurcan ,  Ansheng Liu ,  Haisheng Rong ,  Pradeep Srinivasan ,  Carsten Brandt ,  Isako Hoshino ,  Michael A. Creighton

发明人： Judson D. Ryckman ,  Harel Frish ,  George A. Ghiurcan ,  Ansheng Liu ,  Haisheng Rong ,  Pradeep Srinivasan ,  Carsten Brandt ,  Isako Hoshino ,  Michael A. Creighton

IPC分类号： G02B6/14 ,  G02B1/115 ,  G02B6/122 ,  G02B6/136 ,  G02B6/12

CPC分类号： G02B6/14 ,  G02B1/115 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12157

摘要： Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

公开(公告)号：US20190339585A1

公开(公告)日：2019-11-07

申请号：US16517315

申请日：2019-07-19

申请人： John Heck ,  Harel Frish ,  Derchang Kau ,  Charles Dennison ,  Haisheng Rong ,  Jeffrey Driscoll ,  Jonathan K. Doylend ,  George A. Ghiurcan ,  Michael E. Favaro

发明人： John Heck ,  Harel Frish ,  Derchang Kau ,  Charles Dennison ,  Haisheng Rong ,  Jeffrey Driscoll ,  Jonathan K. Doylend ,  George A. Ghiurcan ,  Michael E. Favaro

IPC分类号： G02F1/295

摘要： Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.

公开(公告)号：US20210119710A1

公开(公告)日：2021-04-22

申请号：US17133360

申请日：2020-12-23

申请人： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

发明人： Meer Nazmus Sakib ,  Peicheng Liao ,  Ranjeet Kumar ,  Duanni Huang ,  Haisheng Rong ,  Harel Frish ,  John Heck ,  Chaoxuan Ma ,  Hao Li ,  Ganesh Balamurugan

IPC分类号： H04B10/61

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

公开(公告)号：US20230020440A1

公开(公告)日：2023-01-19

申请号：US17955378

申请日：2022-09-28

申请人： John Heck ,  Harel Frish ,  Hari Mahalingam ,  Haisheng Rong

发明人： John Heck ,  Harel Frish ,  Hari Mahalingam ,  Haisheng Rong

IPC分类号： G02B6/30

摘要： Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.

公开(公告)号：US20050265679A1

公开(公告)日：2005-12-01

申请号：US10933652

申请日：2004-09-02

申请人： Ansheng Liu ,  Mario Paniccia ,  Haisheng Rong

发明人： Ansheng Liu ,  Mario Paniccia ,  Haisheng Rong

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/26

CPC分类号： G02B6/122 ,  G02B2006/12097 ,  H01S3/063 ,  H01S3/083 ,  H01S3/0941 ,  H01S3/30

摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

摘要翻译： 具有降低的双光子吸收的半导体基拉曼激光器和/或放大器产生载流子寿命。 根据本发明的实施例的装置包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。 光波导将耦合到泵激光器以接收具有第一波长和第一功率电平的第一光束，以导致在半导体波导中发射第二波长的第二光束。 二极管结构被偏置以从响应于光波导中的两个光子吸收而产生的光波导扫出自由载流子。

公开(公告)号：US20110073989A1

公开(公告)日：2011-03-31

申请号：US12567645

申请日：2009-09-25

申请人： Haisheng Rong ,  Ansheng Liu

发明人： Haisheng Rong ,  Ansheng Liu

IPC分类号： H01L29/94 ,  H01L21/30

CPC分类号： H01L29/94 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2202/105 ,  H01L21/76254 ,  H01L29/66181

摘要： Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.

摘要翻译： 采用晶圆键合技术的光调制器。 一种方法的实施例包括蚀刻绝缘体上硅（SOI）晶片以在SOI晶片的第一表面上产生硅波导结构的第一部分，以及制备第二晶片，所述第二晶片包括晶体硅层， 所述第二晶片包括晶体硅的第一表面。 该方法还包括使用晶片接合技术将第二晶片的第一表面与薄氧化物结合到SOI晶片的第一表面，其中硅波导结构的第二部分被蚀刻在晶体硅层中。

公开(公告)号：US20110073972A1

公开(公告)日：2011-03-31

申请号：US12567601

申请日：2009-09-25

申请人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

发明人： John Heck ,  Ansheng Liu ,  Michael T. Morse ,  Haisheng Rong

IPC分类号： H01L31/0232 ,  H01L21/306

CPC分类号： H01L31/02327 ,  G02B6/4214

摘要： A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

摘要翻译： 垂直全内反射（TIR）镜及其制造是通过使用晶体硅蚀刻创建入门轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后将其湿法蚀刻（在HF中），打开Si器件层的底表面。 然后将该底部硅表面暴露，使得在晶体刻蚀中，所得到的形状是具有刻面的重入梯形。这些刻面可以与平面硅波导结合使用以基于TIR原理向上反射光。 或者，光可以从晶片上方耦合到硅波导中，用于晶片级测试。

公开(公告)号：US07421200B2

公开(公告)日：2008-09-02

申请号：US11007858

申请日：2004-12-09

申请人： Ansheng Liu ,  Mario J. Paniccia ,  Haisheng Rong

发明人： Ansheng Liu ,  Mario J. Paniccia ,  Haisheng Rong

IPC分类号： H04J14/00

CPC分类号： H04B10/505 ,  G02F1/2257 ,  G02F1/3515 ,  G02F1/3526

摘要： An optical modulator or switch is disclosed. An apparatus includes an optical splitter disposed in a semiconductor material that splits an optical beam having a first wavelength into first and second portions. The first and second portions of the optical beam are to be directed through first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam to amplify and phase shift the first portion of the optical beam. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.

摘要翻译： 公开了一种光调制器或开关。 一种装置包括设置在半导体材料中的光分路器，其将具有第一波长的光束分成第一和第二部分。 光束的第一和第二部分分别被引导通过第一和第二光波导。 第一光波导也被光学耦合以接收泵浦光束以放大和相移光束的第一部分。 二极管结构设置在第一光波导中，并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。 光耦合器设置在半导体材料中并且光学耦合到第一和第二光波导以组合光束的第一和第二部分。

公开(公告)号：US08450186B2

公开(公告)日：2013-05-28

申请号：US12567645

申请日：2009-09-25

申请人： Haisheng Rong ,  Ansheng Liu

发明人： Haisheng Rong ,  Ansheng Liu

IPC分类号： H01L21/46

CPC分类号： H01L29/94 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2202/105 ,  H01L21/76254 ,  H01L29/66181

摘要： Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.

摘要翻译： 采用晶圆键合技术的光调制器。 一种方法的实施例包括蚀刻绝缘体上硅（SOI）晶片以在SOI晶片的第一表面上产生硅波导结构的第一部分，以及制备第二晶片，所述第二晶片包括晶体硅层， 所述第二晶片包括晶体硅的第一表面。 该方法还包括使用晶片接合技术将第二晶片的第一表面与薄氧化物结合到SOI晶片的第一表面，其中硅波导结构的第二部分被蚀刻在晶体硅层中。

公开(公告)号：US07266258B2

公开(公告)日：2007-09-04

申请号：US10933652

申请日：2004-09-02

申请人： Ansheng Liu ,  Mario J. Paniccia ,  Haisheng Rong

发明人： Ansheng Liu ,  Mario J. Paniccia ,  Haisheng Rong

IPC分类号： G02F1/025 ,  G02F1/295 ,  G02F1/35 ,  H01S3/30

CPC分类号： G02B6/122 ,  G02B2006/12097 ,  H01S3/063 ,  H01S3/083 ,  H01S3/0941 ,  H01S3/30

摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

摘要翻译： 具有降低的双光子吸收的半导体基拉曼激光器和/或放大器产生载流子寿命。 根据本发明的实施例的装置包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。 光波导将耦合到泵激光器以接收具有第一波长和第一功率电平的第一光束，以导致在半导体波导中发射第二波长的第二光束。 二极管结构被偏置以从响应于光波导中的两个光子吸收而产生的光波导扫出自由载流子。