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公开(公告)号:US20210119710A1
公开(公告)日:2021-04-22
申请号:US17133360
申请日:2020-12-23
申请人: Meer Nazmus Sakib , Peicheng Liao , Ranjeet Kumar , Duanni Huang , Haisheng Rong , Harel Frish , John Heck , Chaoxuan Ma , Hao Li , Ganesh Balamurugan
发明人: Meer Nazmus Sakib , Peicheng Liao , Ranjeet Kumar , Duanni Huang , Haisheng Rong , Harel Frish , John Heck , Chaoxuan Ma , Hao Li , Ganesh Balamurugan
IPC分类号: H04B10/61
摘要: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.
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公开(公告)号:US20210149115A1
公开(公告)日:2021-05-20
申请号:US17133347
申请日:2020-12-23
申请人: Duanni Huang , Saeed Fathololoumi , Meer Nazmus Sakib , Mohammad Montazeri Najafabadi , Chaoxuan Ma , David Hui , Taehwan Kim , Ling Liao , Hao Li , Ganesh Balamurugan , Haisheng Rong , Aliasghar Eftekhar
发明人: Duanni Huang , Saeed Fathololoumi , Meer Nazmus Sakib , Mohammad Montazeri Najafabadi , Chaoxuan Ma , David Hui , Taehwan Kim , Ling Liao , Hao Li , Ganesh Balamurugan , Haisheng Rong , Aliasghar Eftekhar
摘要: The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.
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公开(公告)号:US20220011408A1
公开(公告)日:2022-01-13
申请号:US17483894
申请日:2021-09-24
申请人: Meer Nazmus Sakib , Ranjeet Kumar , Haisheng Rong , Chaoxuan Ma
发明人: Meer Nazmus Sakib , Ranjeet Kumar , Haisheng Rong , Chaoxuan Ma
IPC分类号: G01S7/481 , G01S7/4863 , G02B6/12
摘要: In one embodiment, an apparatus includes: a waveguide formed of a PN junction, the waveguide to propagate optical power, the PN junction having a P region adjacent to an N region; and a silicon monitor photodetector formed of the PN junction and in-line with the waveguide to measure the optical power. The silicon monitor photodetector may further be formed of a P-doped region adjacent to the P region and an N-doped region adjacent to the N region. Other embodiments are described and claimed.
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公开(公告)号:US20210006044A1
公开(公告)日:2021-01-07
申请号:US17024342
申请日:2020-09-17
申请人: Jin Hong , Ranjeet Kumar , Meer Nazmus Sakib , Haisheng Rong , Kimchau Nguyen , Mengyuan Huang , Aliasghar Eftekhar , Christian Malouin , Siamak Amiralizadeh Asl , Saeed Fathololoumi , Ling Liao , Yuliya Akulova , Olufemi Dosunmu , Ansheng Liu
发明人: Jin Hong , Ranjeet Kumar , Meer Nazmus Sakib , Haisheng Rong , Kimchau Nguyen , Mengyuan Huang , Aliasghar Eftekhar , Christian Malouin , Siamak Amiralizadeh Asl , Saeed Fathololoumi , Ling Liao , Yuliya Akulova , Olufemi Dosunmu , Ansheng Liu
摘要: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.
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公开(公告)号:US11143818B2
公开(公告)日:2021-10-12
申请号:US16457483
申请日:2019-06-28
申请人: Meer Nazmus Sakib , Guan-Lin Su , John Heck , Haisheng Rong , Ming C. Wu
发明人: Meer Nazmus Sakib , Guan-Lin Su , John Heck , Haisheng Rong , Ming C. Wu
摘要: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.
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公开(公告)号:US20190324210A1
公开(公告)日:2019-10-24
申请号:US16457483
申请日:2019-06-28
申请人: Meer Nazmus Sakib , Guan-Lin Su , John Heck , Haisheng Rong , Ming C. Wu
发明人: Meer Nazmus Sakib , Guan-Lin Su , John Heck , Haisheng Rong , Ming C. Wu
摘要: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.
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公开(公告)号:US20190339585A1
公开(公告)日:2019-11-07
申请号:US16517315
申请日:2019-07-19
申请人: John Heck , Harel Frish , Derchang Kau , Charles Dennison , Haisheng Rong , Jeffrey Driscoll , Jonathan K. Doylend , George A. Ghiurcan , Michael E. Favaro
发明人: John Heck , Harel Frish , Derchang Kau , Charles Dennison , Haisheng Rong , Jeffrey Driscoll , Jonathan K. Doylend , George A. Ghiurcan , Michael E. Favaro
IPC分类号: G02F1/295
摘要: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.
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公开(公告)号:US20230020440A1
公开(公告)日:2023-01-19
申请号:US17955378
申请日:2022-09-28
申请人: John Heck , Harel Frish , Hari Mahalingam , Haisheng Rong
发明人: John Heck , Harel Frish , Hari Mahalingam , Haisheng Rong
IPC分类号: G02B6/30
摘要: Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.
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公开(公告)号:US20170336565A1
公开(公告)日:2017-11-23
申请号:US15282728
申请日:2016-09-30
申请人: Judson D. Ryckman , Harel Frish , George A. Ghiurcan , Ansheng Liu , Haisheng Rong , Pradeep Srinivasan , Carsten Brandt , Isako Hoshino , Michael A. Creighton
发明人: Judson D. Ryckman , Harel Frish , George A. Ghiurcan , Ansheng Liu , Haisheng Rong , Pradeep Srinivasan , Carsten Brandt , Isako Hoshino , Michael A. Creighton
CPC分类号: G02B6/14 , G02B1/115 , G02B6/1228 , G02B6/136 , G02B2006/12097 , G02B2006/12104 , G02B2006/12147 , G02B2006/12157
摘要: Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.
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公开(公告)号:US09791641B2
公开(公告)日:2017-10-17
申请号:US14884430
申请日:2015-10-15
申请人: John Heck , Haisheng Rong
发明人: John Heck , Haisheng Rong
CPC分类号: G02B6/4214 , G02B6/122 , G02B6/136 , G02B6/26 , G02B6/42 , G02B6/4208 , G02B2006/12104 , H01L21/30604
摘要: Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.
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