Abstract:
Provided are a tray feeder which provides parts to a part mounting device and parts providing method using the same. The tray feeder includes: a magazine which houses at least one tray for accommodating parts; an inserting/extracting member which inserts a tray into the magazine or extracts a tray from the magazine; a buffer member which is positioned above the magazine and supports a standby tray from which parts accommodated therein are to be mounted on a board by a part mounting device; and a feeding member which is positioned above the inserting/extracting member and provides a tray supported by the feeding member so that parts accommodated in the supported tray are adsorbed by the part mounting device, wherein the inserting/extracting member is elevated or lowered to insert a tray into the magazine or extract a tray from the magazine.
Abstract:
Provided is a slurry composition for chemical mechanical polishing (CMP) of a metal. The slurry composition comprises a copolymer whose average molecular weight is from about 600,000 to about 1,300,000 and whose monomers are acrylic acid and acrylamide in a molar ratio of about 1:30 to about 30:1. The slurry composition exhibits a non-Prestonian behavior to achieve minimized dishing and attain a high degree of planarization.
Abstract:
A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.
Abstract:
A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.
Abstract:
A mobile terminal and control method to share content with a device and control the device are provide. The mobile terminal includes a communication unit to communicate with a host and the device; a search unit to receive content information and device information; an input unit to receive a content selection signal and a device selection signal; and a control unit to control the mobile terminal. The mobile terminal receives content information from a host and selects content to be outputted to a device selected from device information from the host. The mobile terminal controls the selected device using control commands transmitted to the selected device based on a control mode. If the control mode is not stored in the mobile terminal, the mobile terminal may receive the control mode from the host.
Abstract:
Provided is a CMP slurry composition for barrier polishing for manufacturing copper interconnects, the composition including abrasive particles, a copper surface protective agent, a copper corrosion inhibitor, an oxidizing agent, and a pH adjustor, wherein the abrasive particles are non-spherical colloidal silica having a ratio of an average primary particle size to an average secondary particle size of about 0.6 or less and the copper surface protective agent is a carboxyl-functionalized water-soluble polymer.