公开(公告)号：US07880553B2

公开(公告)日：2011-02-01

申请号：US12382348

申请日：2009-03-13

申请人： Jun Kikuchi ,  Toru Matsumoto ,  Kaoru Kanehachi

发明人： Jun Kikuchi ,  Toru Matsumoto ,  Kaoru Kanehachi

IPC分类号： H03L1/00

CPC分类号： H03B5/04 ,  H03B5/368 ,  H03L1/025 ,  H03L3/00

摘要： An oscillation section for which an output frequency is controlled based on a control signal depending on an ambient temperature; a temperature compensation circuit for supplying the control signal to this oscillation section; and a switching switch circuit consisting of an output buffer and a temperature sensor output switch for which ON and OFF are controlled so that any one of an oscillation output from the oscillation section and a temperature sensor output from the temperature compensation circuit is outputted. The temperature sensor output switch is structured so that transfer gate switches are connected in a two-stage serial manner and a third switch connected to a fixed potential is sandwiched between these connection points. When an oscillation output is outputted, the transfer gate switches are OFF and the third switch is ON and, when a temperature sensor output is outputted, the transfer gate switches are ON and the third switch is OFF.

摘要翻译： 基于根据环境温度的控制信号控制输出频率的振荡部分; 温度补偿电路，用于向该振荡部提供控制信号; 以及由输出缓冲器和控制ON和OFF的温度传感器输出开关组成的切换开关电路，以便输出从振荡部分输出的振荡和从温度补偿电路输出的温度传感器中的任何一个。 温度传感器输出开关的结构使得传输门开关以两级串联方式连接，并且连接到固定电位的第三开关夹在这些连接点之间。 当输出振荡输出时，传输门开关为OFF，第三开关为ON，输出温度传感器输出时，传输门开关为ON，第三开关为OFF。

公开(公告)号：US20090231049A1

公开(公告)日：2009-09-17

申请号：US12382348

申请日：2009-03-13

申请人： Jun Kikuchi ,  Toru Matsumoto ,  Kaoru Kanehachi

发明人： Jun Kikuchi ,  Toru Matsumoto ,  Kaoru Kanehachi

IPC分类号： G01K7/00

CPC分类号： H03B5/04 ,  H03B5/368 ,  H03L1/025 ,  H03L3/00

摘要： An oscillation circuit of the present invention includes: an oscillation section for which an output frequency is controlled based on a control signal depending on an ambient temperature; a temperature compensation circuit for supplying the control signal to this oscillation section; and a switching switch circuit consisting of an output buffer and a temperature sensor output switch for which ON and OFF are controlled so that any one of an oscillation output from the oscillation section and a temperature sensor output from the temperature compensation circuit is outputted. The temperature sensor output switch is structured so that transfer gate switches are connected in a two-stage serial manner and a third switch connected to a fixed potential is sandwiched between these connection points. When an oscillation output is outputted, the transfer gate switches are OFF and the third switch is ON and, when a temperature sensor output is outputted, the transfer gate switches are ON and the third switch is OFF.

摘要翻译： 本发明的振荡电路包括：根据环境温度根据控制信号控制输出频率的振荡部分; 温度补偿电路，用于向该振荡部提供控制信号; 以及由输出缓冲器和控制ON和OFF的温度传感器输出开关组成的切换开关电路，以便输出从振荡部分输出的振荡和从温度补偿电路输出的温度传感器中的任何一个。 温度传感器输出开关的结构使得传输门开关以两级串联方式连接，并且连接到固定电位的第三开关夹在这些连接点之间。 当输出振荡输出时，传输门开关为OFF，第三开关为ON，输出温度传感器输出时，传输门开关为ON，第三开关为OFF。

公开(公告)号：US5442210A

公开(公告)日：1995-08-15

申请号：US144935

申请日：1993-10-28

申请人： Kaoru Kanehachi

发明人： Kaoru Kanehachi

IPC分类号： H01L27/112 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108 ,  H01L29/78 ,  H01L27/10

CPC分类号： H01L27/11521 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/11526

摘要： A semiconductor device has a DRAM portion forming a cache memory and a flash memory portion fabricated on a common substrate, fabricated by a process based on the process of fabricating the flash memory portion. An electrode layer common to capacitors of the DRAM portion and a floating gate layer of the flash memory portion are formed simultaneously from the same material. An electrode layer of the upper capacitor of the DRAM portion, a gate electrode layer for a transistor of the DRAM portion, and a control gate layer of the flash memory portion are formed simultaneously from the same material.

摘要翻译： 半导体器件具有形成高速缓冲存储器的DRAM部分和通过基于制造闪速存储器部分的工艺的工艺制造的公共衬底上制造的闪存部分。 与相同材料同时形成DRAM部分的电容器和闪存部分的浮动栅层共同的电极层。 从相同的材料同时形成DRAM部分的上部电容器的电极层，DRAM部分的晶体管的栅电极层和闪存部分的控制栅极层。

公开(公告)号：US5384274A

公开(公告)日：1995-01-24

申请号：US241946

申请日：1994-05-12

申请人： Kaoru Kanehachi

发明人： Kaoru Kanehachi

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L21/265

CPC分类号： H01L27/08

摘要： A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity such as silicon oxide buried therein. An insulator layer is formed on the cut out region and on the periphery thereof. A connection layer serves as one of the leads of the inductor and is formed using an electric conductive material such as a metal or doped polycrystalline silicon. A contact hole is provided in the interlayer insulation layer. A connection layer serves as an inductor and the other lead of the inductor, which is formed using an electric conductive material such as a metal. A protective insulator layer is also provided on the top of the structure.

摘要翻译： 制造其上形成有电感器的半导体器件的方法包括硅衬底。 通过将具有具有低复合介电常数的绝缘材料的中空形状的中空形状的硅衬底的一部分除去其中的氧化硅来获得切出区域。 在切出区域及其周围形成有绝缘体层。 连接层用作电感器的引线之一，并且使用诸如金属或掺杂多晶硅的导电材料形成。 在层间绝缘层中设置接触孔。 连接层用作电感器，并且使用诸如金属的导电材料形成的电感器的另一引线。 在结构的顶部还设有保护绝缘层。

公开(公告)号：US07496169B2

公开(公告)日：2009-02-24

申请号：US11224803

申请日：2005-09-13

申请人： Kaoru Kanehachi ,  Akira Toyama

发明人： Kaoru Kanehachi ,  Akira Toyama

IPC分类号： H03D3/24

CPC分类号： H03L7/0807 ,  H03K2005/00052 ,  H03K2005/00156 ,  H03K2005/00241

摘要： A frequency synthesizer comprises a digital/analog converter which sequentially converts difference data of phase data indicating the phase of a reference signal to an analog value, a voltage signal generator which integrates the analog value converted by the digital/analog converter, thereby generating a voltage signal interpolating between signal levels corresponding to two time-sequential pieces of the phase data, a reference-timing-signal output section which outputs a reference timing signal indicating the specific phase of the reference signal at a timing when the signal level of the voltage signal generated by the voltage signal generator crosses a preset setting voltage, and a reset section which resets the voltage signal generated by the voltage signal generator to the setting voltage. Accordingly, the noise performance of an output signal from the frequency synthesizer is improved.

摘要翻译： 频率合成器包括数字/模拟转换器，其顺序地将指示参考信号的相位的相位数据的差分数据转换为模拟值，电压信号发生器将由数字/模拟转换器转换的模拟值积分，从而产生电压 在对应于两个时序的相位数据的信号电平之间进行信号内插;参考定时信号输出部，其在电压信号的信号电平的定时输出指示参考信号的特定相位的参考定时信号 由电压信号发生器产生的电压跨越预设的设定电压，以及复位部，其将由电压信号发生器产生的电压信号复位为设定电压。 因此，提高了来自频率合成器的输出信号的噪声性能。

公开(公告)号：US20060056565A1

公开(公告)日：2006-03-16

申请号：US11224803

申请日：2005-09-13

申请人： Kaoru Kanehachi ,  Akira Toyama

发明人： Kaoru Kanehachi ,  Akira Toyama

IPC分类号： H03D3/24

CPC分类号： H03L7/0807 ,  H03K2005/00052 ,  H03K2005/00156 ,  H03K2005/00241

摘要： A frequency synthesizer comprises a digital/analog converter which sequentially converts difference data of phase data indicating the phase of a reference signal to an analog value, a voltage signal generator which integrates the analog value converted by the digital/analog converter, thereby generating a voltage signal interpolating between signal levels corresponding to two time-sequential pieces of the phase data, a reference-timing-signal output section which outputs a reference timing signal indicating the specific phase of the reference signal at a timing when the signal level of the voltage signal generated by the voltage signal generator crosses a preset setting voltage, and a reset section which resets the voltage signal generated by the voltage signal generator to the setting voltage. Accordingly, the noise performance of an output signal from the frequency synthesizer is improved.