公开(公告)号：US20120263204A1

公开(公告)日：2012-10-18

申请号：US13442974

申请日：2012-04-10

Applicant: Jun-ichi HASHIMOTO ,  Katsuhisa Tawa

Inventor： Jun-ichi HASHIMOTO ,  Katsuhisa Tawa

IPC: H01S5/34

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214

Abstract: A quantum cascade laser includes a substrate having a first surface, a second surface opposite the first surface, and a recess provided in the second surface; a semiconductor region provided on the first surface of the substrate; a ridge portion extending in one direction on the semiconductor region; a first electrode provided along the ridge portion; and a second electrode provided on the second surface of the substrate. Furthermore, the semiconductor region includes a first cladding layer of n-type, a core layer, and a second cladding layer of n-type stacked in that order. The recess is provided at a position corresponding to the ridge portion in the second surface of the substrate, and the second electrode is provided in the recess.

Abstract translation: 量子级联激光器包括具有第一表面，与第一表面相对的第二表面和设置在第二表面中的凹槽的基底; 设置在所述基板的第一表面上的半导体区域; 在半导体区域上沿一个方向延伸的脊部; 沿所述脊部设置的第一电极; 以及设置在所述基板的第二表面上的第二电极。 此外，半导体区域包括依次层叠的n型，芯层和n型的第二包层的第一包层。 凹部设置在与基板的第二表面中的脊部对应的位置处，第二电极设置在凹部中。

公开(公告)号：US20110091151A1

公开(公告)日：2011-04-21

申请号：US12906427

申请日：2010-10-18

Applicant: Jun-ichi HASHIMOTO

Inventor： Jun-ichi HASHIMOTO

IPC: G02B6/12

CPC classification number: G02B6/122

Abstract: An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary.

Abstract translation: 集成半导体光学器件包括第一和第二半导体光学器件。 第一半导体光学器件包括第一芯层，包括第一脊部的第一上包层，围绕第一脊部的第一掩埋层和设置在第一掩埋层和第一脊部之间的第一调整层。 第二半导体光学器件包括第二芯层，包括第二脊部的第二上包层。 第一半导体光学器件和第二半导体光学器件沿预定的轴线方向彼此相邻地布置。 第一芯层通过对接方法在第一和第二半导体光学器件之间的接合边界处连接到第二芯层。 第一调整层的折射率低于第一芯层的折射率，并且高于第一掩埋层的折射率。 第一调整层在规定的轴方向上延伸。 第一调整层从一个端面到接合边界具有恒定的宽度。

公开(公告)号：US20110243491A1

公开(公告)日：2011-10-06

申请号：US13038895

申请日：2011-03-02

Applicant: Jun-ichi HASHIMOTO

Inventor： Jun-ichi HASHIMOTO

IPC: G02F1/035

CPC classification number: G02F1/225 ,  G02F1/035 ,  G02F2001/212 ,  G02F2201/17 ,  G02F2201/34

Abstract: A Mach-Zehnder interferometer type optical modulator includes a first end facet and a reflecting portion opposing the first end facet; a single optical coupler including input and output ports, the optical coupler being disposed between the first end facet and the reflecting portion; first and second optical waveguides that are connected to the input ports of the optical coupler; third and fourth optical waveguides that are connected to the output ports of the optical coupler; and a phase shifting section disposed between the optical coupler and the reflecting portion. The phase shifting section includes a first optical waveguide structure constituting part of the third optical waveguide; a first upper electrode on the first optical waveguide structure; a second optical waveguide structure constituting part of the fourth optical waveguide; and a second upper electrode on the second optical waveguide structure.

Abstract translation: 马赫 - 曾德干涉仪型光调制器包括第一端面和与第一端面相对的反射部分; 包括输入和输出端口的单个光耦合器，所述光耦合器设置在所述第一端面与所述反射部分之间; 第一和第二光波导，其连接到光耦合器的输入端口; 第三和第四光波导，其连接到光耦合器的输出端口; 以及设置在光耦合器和反射部分之间的相移部分。 相移部分包括构成第三光波导的一部分的第一光波导结构; 第一光波导结构上的第一上电极; 构成第四光波导的一部分的第二光波导结构; 和在第二光波导结构上的第二上电极。

公开(公告)号：US20090203161A1

公开(公告)日：2009-08-13

申请号：US12404762

申请日：2009-03-16

Applicant: Jun-ichi HASHIMOTO

Inventor： Jun-ichi HASHIMOTO

IPC: H01L21/00

CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01S5/209 ,  H01S5/2224 ,  H01S5/34306 ,  H01S5/34353

Abstract: The present invention provides a laser diode with a current blocking layer without a pn-junction. The laser diode includes a lower cladding layer, an active region and an upper cladding layer on the GaAs substrate in this order. The active region includes first and second regions. The upper cladding layer, which includes a ridge structure, locates on the first region, while, the current blocking region is on the second region of the active region so as to sandwich the ridge structure. The current blocking layer of the invention is made of one of un-doped GaInP and un-doped AlGaInP grown at a relatively low temperature and shows high resistance greater than 105 Ω·cm.

Abstract translation: 本发明提供一种具有没有pn结的电流阻挡层的激光二极管。 该激光二极管依次包括在GaAs衬底上的下包层，有源区和上覆层。 有源区域包括第一和第二区域。 包括脊结构的上包层位于第一区域上，而电流阻挡区域位于有源区域的第二区域上，以夹住脊结构。 本发明的电流阻挡层由在相对低的温度下生长的未掺杂的GaInP和未掺杂的AlGaInP中的一种形成，并且显示高于105Ω·cm的高电阻。

公开(公告)号：US20110235961A1

公开(公告)日：2011-09-29

申请号：US13038809

申请日：2011-03-02

Applicant: Jun-ichi HASHIMOTO

Inventor： Jun-ichi HASHIMOTO

IPC: G02F1/035

CPC classification number: G02F1/2257

Abstract: A Mach-Zehnder interferometer type optical modulator includes first and third optical waveguides; input and output optical couplers; and a phase shifting section disposed between the input and output optical couplers. The phase shifting section includes first and second optical waveguide structures each including an n-type semiconductor section, a core layer and a cladding layer. The cladding layer of the first optical waveguide structure includes a first section disposed on the core layer, and second and third sections disposed on the first section. The second and third sections are juxtaposed to each other in a direction that intersects a waveguiding direction. The first and second sections are composed of a p-type semiconductor, and the third section is composed of an undoped semiconductor.

Abstract translation: 马赫 - 曾德干涉仪型光调制器包括第一和第三光波导; 输入和输出光耦合器; 以及设置在输入和输出光耦合器之间的相移部分。 相移部分包括每个包括n型半导体部分，芯层和包覆层的第一和第二光波导结构。 第一光波导结构的包层包括设置在芯层上的第一部分和设置在第一部分上的第二和第三部分。 第二和第三部分在与波导方向相交的方向上彼此并置。 第一和第二部分由p型半导体构成，第三部分由未掺杂的半导体构成。

公开(公告)号：US20110091147A1

公开(公告)日：2011-04-21

申请号：US12906469

申请日：2010-10-18

Applicant: Jun-ichi HASHIMOTO

Inventor： Jun-ichi HASHIMOTO

IPC: G02F1/025 ,  G02B6/122

CPC classification number: G02B6/42 ,  B82Y20/00 ,  G02B6/4203 ,  G02B2006/12097 ,  G02F1/01708 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306

Abstract: An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary.

公开(公告)号：US20110235971A1

公开(公告)日：2011-09-29

申请号：US13038719

申请日：2011-03-02

Applicant: Jun-ichi HASHIMOTO

Inventor： Jun-ichi HASHIMOTO

IPC: G02B6/26

CPC classification number: G02F1/2257 ,  B82Y20/00 ,  G02F1/01708

Abstract: A semiconductor optical device includes a first optical waveguide including first, second, and third sections; a second optical waveguide including fourth, fifth, and sixth sections; an input optical coupler; and an output optical coupler. The first and second optical waveguides and the input and output optical couplers each include a first cladding layer composed of an n-type semiconductor and a core layer. The second and fifth sections each include an intermediate semiconductor layer on the core layer, and a second cladding layer composed of an n-type semiconductor. The first, third, fourth, and sixth sections and the input and output optical couplers each further include a third cladding layer on the core layer. At least one of the third cladding layers includes a first cladding section on the core layer and a second cladding section on the first cladding section. The second cladding section is composed of a semi-insulating semiconductor.

Abstract translation: 半导体光学器件包括：第一光波导，包括第一，第二和第三部分; 包括第四，第五和第六部分的第二光波导; 输入光耦合器; 和输出光耦合器。 第一和第二光波导以及输入和输出光耦合器各自包括由n型半导体和芯层组成的第一覆层。 第二和第五部分各自包括芯层上的中间半导体层和由n型半导体构成的第二覆层。 第一，第三，第四和第六部分以及输入和输出光耦合器每个还包括在芯层上的第三覆层。 第三包层中的至少一个包括芯层上的第一包层部分和第一包层部分上的第二包层部分。 第二包层部由半绝缘半导体构成。