专利检索 ap:("Jung-Hoon BAK" OR "Woo-Jin KIM" OR "Mina LEE" OR "Gwan-Hyeob KOH" OR "Yoon-Jong SONG") AND inv:"Jung-Hoon BAK" 第 1 页

1.

发明申请
MTJ STRUCTURES AND MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES INCLUDING THE SAME 审中-公开

公开(公告)号：US20170110509A1

公开(公告)日：2017-04-20

申请号：US15293771

申请日：2016-10-14

申请人： Jung-Hoon BAK , Woo-Jin KIM , Mina LEE , Gwan-Hyeob KOH , Yoon-Jong SONG

发明人： Jung-Hoon BAK , Woo-Jin KIM , Mina LEE , Gwan-Hyeob KOH , Yoon-Jong SONG

IPC分类号： H01L27/22 , H01L43/10 , G11C11/16 , H01L43/02 , H01L43/08

CPC分类号： H01L27/228 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10

摘要： A magnetic tunnel junction (MTJ) structure includes a fixed layer pattern structure having a perpendicular magnetization direction, a tunnel barrier pattern on the fixed layer pattern structure, a free layer pattern on the tunnel barrier pattern, the free layer pattern having a perpendicular magnetization direction, a first surface magnetism induction pattern on the free layer pattern, the first surface magnetism induction pattern inducing a perpendicular magnetism in a surface of the free layer pattern, a conductive pattern on the first surface magnetism induction pattern, and a ferromagnetic pattern on the conductive pattern.