公开(公告)号：US08018542B2

公开(公告)日：2011-09-13

申请号：US11502915

申请日：2006-08-10

申请人： Jung-Joon Park ,  Min-Wook Park ,  Dong-Hyeon Ki

发明人： Jung-Joon Park ,  Min-Wook Park ,  Dong-Hyeon Ki

IPC分类号： G02F1/1333

CPC分类号： G02F1/136259 ,  G02F2001/136254

摘要： A display substrate includes a base substrate, a conductive line on the base substrate, a switching element and a testing member. The switching element includes a first electrode formed on the semiconductor layer pattern and electrically connected to the conductive line, and a second electrode spaced apart from the first electrode and semiconductor layer pattern. The testing member includes a conductive line testing portion that is formed from the same layer as the conductive line and an electrode testing portion that is formed from the same layer as the first electrode. The conductive line testing portion and the electrode testing portion have substantially the same width as the conductive line and the first electrode, respectively. The testing member also includes a semiconductor layer testing portion. The display substrate lends itself to efficient manufacturing with reduced process time and cost.

摘要翻译： 显示基板包括基底基板，基底基板上的导线，开关元件和测试部件。 开关元件包括形成在半导体层图案上并电连接到导电线的第一电极和与第一电极和半导体层图案间隔开的第二电极。 测试构件包括由与导电线相同的层形成的导线测试部分和由与第一电极相同的层形成的电极测试部分。 导线测试部分和电极测试部分分别具有与导电线和第一电极基本上相同的宽度。 测试构件还包括半导体层测试部分。 显示基板有助于有效的制造，缩短了处理时间和成本。

公开(公告)号：US20070034522A1

公开(公告)日：2007-02-15

申请号：US11502915

申请日：2006-08-10

申请人： Jung-Joon Park ,  Min-Wook Park ,  Dong-Hyeon Ki

发明人： Jung-Joon Park ,  Min-Wook Park ,  Dong-Hyeon Ki

IPC分类号： C25B1/34

CPC分类号： G02F1/136259 ,  G02F2001/136254

摘要： A display substrate includes a base substrate, a conductive line on the base substrate, a switching element and a testing member. The switching element includes a first electrode formed on the semiconductor layer pattern and electrically connected to the conductive line, and a second electrode spaced apart from the first electrode and semiconductor layer pattern. The testing member includes a conductive line testing portion that is formed from the same layer as the conductive line and an electrode testing portion that is formed from the same layer as the first electrode. The conductive line testing portion and the electrode testing portion have substantially the same width as the conductive line and the first electrode, respectively. The testing member also includes a semiconductor layer testing portion. The display substrate lends itself to efficient manufacturing with reduced process time and cost.

摘要翻译： 显示基板包括基底基板，基底基板上的导线，开关元件和测试部件。 开关元件包括形成在半导体层图案上并电连接到导电线的第一电极和与第一电极和半导体层图案间隔开的第二电极。 测试构件包括由与导电线相同的层形成的导线测试部分和由与第一电极相同的层形成的电极测试部分。 导线测试部分和电极测试部分分别具有与导电线和第一电极基本上相同的宽度。 测试构件还包括半导体层测试部分。 显示基板有助于有效的制造，缩短了处理时间和成本。

公开(公告)号：US20050082535A1

公开(公告)日：2005-04-21

申请号：US10926719

申请日：2004-08-26

申请人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

发明人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1339 ,  G02F1/1368 ,  G03C1/85 ,  G03C5/00 ,  G09F9/30 ,  H01L21/00 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/1339

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在下导电膜的第一和第二部分上形成像素电极和一对冗余电极，所述冗余电极暴露下导电膜的第二部分的一部分; 去除下导电膜的第二部分的暴露部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

公开(公告)号：US07459323B2

公开(公告)日：2008-12-02

申请号：US11512805

申请日：2006-08-30

申请人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

发明人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

IPC分类号： H01L21/00

CPC分类号： G02F1/1368 ,  G02F1/1339

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在下导电膜的第一和第二部分上形成像素电极和一对冗余电极，所述冗余电极暴露下导电膜的第二部分的一部分; 去除下导电膜的第二部分的暴露部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

公开(公告)号：US07119368B2

公开(公告)日：2006-10-10

申请号：US10926719

申请日：2004-08-26

申请人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

发明人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

IPC分类号： H01L31/0376

CPC分类号： G02F1/1368 ,  G02F1/1339

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

公开(公告)号：US20060289965A1

公开(公告)日：2006-12-28

申请号：US11512805

申请日：2006-08-30

申请人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

发明人： Min-Wook Park ,  Sang-Jin Jeon ,  Jung-Joon Park ,  Jeong-Young Lee ,  Bum-Ki Baek ,  Se-Hwan Yu ,  Sang-Ki Kwak ,  Han-Ju Lee ,  Kwon-Young Choi

IPC分类号： H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： G02F1/1368 ,  G02F1/1339

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，包括：在基板上形成栅极线; 在栅极线上依次沉积栅极绝缘层和半导体层; 在半导体层上沉积下导电膜和上导电膜; 对上导电膜，下导电膜和半导体层进行光蚀刻; 沉积钝化层; 对所述钝化层进行光蚀刻以暴露所述上导电膜的第一和第二部分; 去除上导电膜的第一和第二部分以暴露下导电膜的第一和第二部分; 在下导电膜的第一和第二部分上形成像素电极和一对冗余电极，所述冗余电极暴露下导电膜的第二部分的一部分; 去除下导电膜的第二部分的暴露部分以暴露半导体层的一部分; 以及在半导体层的暴露部分上形成柱状间隔物。

公开(公告)号：US20100151121A1

公开(公告)日：2010-06-17

申请号：US12714341

申请日：2010-02-26

申请人： Jung-Joon Park ,  Su-Ho Song ,  Wan-Seog Oh ,  Jae-Chul Um

发明人： Jung-Joon Park ,  Su-Ho Song ,  Wan-Seog Oh ,  Jae-Chul Um

IPC分类号： B05D5/12

CPC分类号： H01M4/525 ,  C01G51/42 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/40 ,  H01M4/1315 ,  H01M10/0525

摘要： Disclosed in a positive active material for a lithium secondary battery including a compound represented by formula 1 and having a 10% to 70% ratio of diffracted intensity of diffraction lines in 2θ=53° (104 plane) with respect to diffracted intensity of diffraction lines in the vicinity of 2θ=22° (003 plane) in X-ray diffraction patterns using a CoKα-ray, LixCoO2-yAy  (1) wherein, x is from 0.90 to 1.04, y is from 0 to 0.5, and A is selected from the group consisting of F, S and P.

摘要翻译： 公开了一种锂二次电池的正极活性物质，其包含由式1表示的化合物，并且衍射线的衍射强度的比例在2θ= 53°（104平面）中相对于衍射衍射强度为10％至70％ 使用CoKα射线，LixCoO2-yAy（1），X为0.90〜1.04，y为0〜0.5，X为0〜0.5的X射线衍射图中，2θ附近= 22°（003面） 选自F，S和P.

公开(公告)号：US07695869B2

公开(公告)日：2010-04-13

申请号：US12354528

申请日：2009-01-15

申请人： Jung-Joon Park ,  Su-Ho Song ,  Wan-Seog Oh ,  Jae-Chul Um

发明人： Jung-Joon Park ,  Su-Ho Song ,  Wan-Seog Oh ,  Jae-Chul Um

IPC分类号： H01M4/58

CPC分类号： H01M4/525 ,  C01G51/42 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/40 ,  H01M4/1315 ,  H01M10/0525

摘要： Disclosed in a positive active material for a lithium secondary battery including a compound represented by formula 1 and having a 10% to 70% ratio of diffracted intensity of diffraction lines in 2θ=53° (104 plane) with respect to diffracted intensity of diffraction lines in the vicinity of 2θ=22° (003 plane) in X-ray diffraction patterns using a CoKα-ray, LixCoO2-yAy  (1) wherein, x is from 0.90 to 1.04, y is from 0 to 0.5, and A is selected from the group consisting of F, S and P.

公开(公告)号：US07601462B2

公开(公告)日：2009-10-13

申请号：US11037232

申请日：2005-01-19

申请人： Dong-Min Im ,  Young-Min Choi ,  Gue-Sung Kim ,  Hyo-Sug Lee ,  Jung-Joon Park

发明人： Dong-Min Im ,  Young-Min Choi ,  Gue-Sung Kim ,  Hyo-Sug Lee ,  Jung-Joon Park

IPC分类号： H01M4/48 ,  H01M4/50 ,  H01M4/52 ,  H01M4/58

CPC分类号： C01G53/42 ,  C01G45/1221 ,  C01G51/42 ,  C01P2006/40 ,  H01M4/0404 ,  H01M4/131 ,  H01M4/364 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M10/0525 ,  H01M10/4235

摘要： A cathode active material for a lithium rechargeable battery is provided. The cathode active material is used for a lithium rechargeable battery containing a cathode, an anode, and an electrolytic solution. The cathode active material is composed of 0.5% by weight or less carbonate ion (CO32−) plus bicarbonate ion (HCO3−) and 0.1% by weight or less hydroxyl ion (OH−). The swelling of lithium battery containing the cathode active material is substantially suppressed when is placed at 60° C. or more.

摘要翻译： 提供了一种用于锂可再充电电池的阴极活性材料。 正极活性物质用于含有阴极，阳极和电解液的锂可再充电电池。 正极活性物质由0.5重量％以下的碳酸根离子（CO32-）加上碳酸氢根离子（HCO3-）和0.1重量％以下的羟基离子（OH-）构成。 当放置在60℃以上时，含有正极活性物质的锂电池的膨胀基本上被抑制。

公开(公告)号：US20050181281A1

公开(公告)日：2005-08-18

申请号：US11061969

申请日：2005-02-16

申请人： Jung-Joon Park ,  Su-Ho Song ,  Wan-Seog Oh ,  Jae-Chul Um

发明人： Jung-Joon Park ,  Su-Ho Song ,  Wan-Seog Oh ,  Jae-Chul Um

IPC分类号： C01G51/00 ,  C01D15/00 ,  C01G1/02 ,  C01G51/04 ,  C01G51/08 ,  H01M4/525 ,  H01M4/52 ,  H01M4/58

CPC分类号： H01M4/525 ,  C01G51/42 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2006/40 ,  H01M4/1315 ,  H01M10/0525

摘要： Disclosed in a positive active material for a lithium secondary battery including a compound represented by formula 1 and having a 10% to 70% ratio of diffracted intensity of diffraction lines in 2θ=53° (104 plane) with respect to diffracted intensity of diffraction lines in the vicinity of 2θ=22° (003 plane) in X-ray diffraction patterns using a CoKα-ray, LixCoO2-yAy  (1)wherein, x is from 0.90 to 1.04, y is from 0 to 0.5, and A is selected from the group consisting of F, S and P.

摘要翻译： 公开了一种锂二次电池的正极活性物质，其包含由式1表示的化合物，并且在2θ= 53°（104平面）中的衍射线的衍射强度的衍射强度相对于衍射线的衍射强度为10％至70％ 在使用CoKalpha射线的X射线衍射图中在2θ= 22°（003平面）的附近，<？在线公式描述=“在线公式”end =“lead”→> （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> 其中，x为0.90〜1.04，y为0〜0.5，A选自F，S和P.