公开(公告)号：US07085220B2

公开(公告)日：2006-08-01

申请号：US10386681

申请日：2003-03-13

申请人： Junichi Fujikata ,  Hitoshi Yokota ,  Tsutomu Ishi

发明人： Junichi Fujikata ,  Hitoshi Yokota ,  Tsutomu Ishi

IPC分类号： G11B7/00

CPC分类号： B82Y10/00 ,  G11B7/1387

摘要： A optical device including conductive films having a first and second surfaces, one hole, surface specific shapes periodically, and a layer inserted as an intermediate layer between the first and the second surface of conductive films. The intermediate layer has the effect for improving surface roughness of the surface of conductive film. A light incident upon one surface enhances an intensity transmitted though the hole.

摘要翻译： 一种光学器件，包括具有第一表面和第二表面的导电膜，一个孔，周期性的表面特定形状以及在导电膜的第一和第二表面之间作为中间层插入的层。 中间层具有改善导电膜表面粗糙度的效果。 在一个表面上入射的光增强了穿过孔传播的强度。

公开(公告)号：US20060232894A1

公开(公告)日：2006-10-19

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US20050019610A1

公开(公告)日：2005-01-27

申请号：US10923990

申请日：2004-08-23

申请人： Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

发明人： Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11B5/64

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/12 ,  Y10T428/1114

摘要： In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10−6 Torr to 10−9 Torr, reduces the substrate temperature to 0° C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.

摘要翻译： 在通过反铁磁性薄膜进行交换耦合而施加了交换偏压的磁性薄膜和检测磁场的磁性薄膜的自旋隧道磁阻效应薄膜中，形成磁性薄膜或抗反射膜 将铁磁性薄膜（PtMn，PdMn，NiMn）层压到底层（Ta，Zr，Hf）上，其表面粗糙度在0.1〜5埃的范围内。 用于控制表面粗糙度的手段将氧气，氮气，氢气或其气体混合物引入10 -6 Torr至10 -9 Torr的真空中，将衬底温度降至0° C.或更低，或氧化底层。 所使用的下电极层材料是高磁导率非晶磁性材料和非磁性金属层的膜层叠体。

公开(公告)号：US07883911B2

公开(公告)日：2011-02-08

申请号：US12402223

申请日：2009-03-11

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L21/00

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US07369375B2

公开(公告)日：2008-05-06

申请号：US11477411

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnetic layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 第一磁性层设置在下导电层上。 在第一磁性层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离 层保持不变。

公开(公告)号：US20070047158A1

公开(公告)日：2007-03-01

申请号：US11477411

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 在下导电层上提供自由层。 在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不被放置在垂直偏置层的正上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层与垂直偏置之间的距离 层保持不变。

公开(公告)号：US20060007606A1

公开(公告)日：2006-01-12

申请号：US11227143

申请日：2005-09-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US07728366B2

公开(公告)日：2010-06-01

申请号：US10599609

申请日：2005-04-05

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L31/113

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US07161774B2

公开(公告)日：2007-01-09

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06999287B2

公开(公告)日：2006-02-14

申请号：US10803144

申请日：2004-03-18

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.