公开(公告)号：US06864169B2

公开(公告)日：2005-03-08

申请号：US10233475

申请日：2002-09-04

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/70 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

摘要翻译： 在形成通过CMP将氧化硅膜39的互连槽40中的Cu互连46a至46e形成之后，然后进行清洗，每个氧化硅膜39和Cu互连46a至46e的表面被还原 等离子体（氨等离子体）。 然后，没有真空断裂，连续形成盖膜（氮化硅膜）。 该方法使得可以提高通过镶嵌方法形成的铜互连的绝缘击穿电阻（可靠性）。

公开(公告)号：US06756679B2

公开(公告)日：2004-06-29

申请号：US10233421

申请日：2002-09-04

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L2348

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

公开(公告)号：US06797609B2

公开(公告)日：2004-09-28

申请号：US10233432

申请日：2002-09-04

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L214763

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

摘要翻译： 在形成通过CMP将氧化硅膜39的互连槽40中的Cu互连46a至46e形成之后，然后进行清洗，每个氧化硅膜39和Cu互连46a至46e的表面被还原 等离子体（氨等离子体）。 然后，没有真空断裂，连续形成盖膜（氮化硅膜）。 该方法使得可以提高通过镶嵌方法形成的铜互连的绝缘击穿电阻（可靠性）。

公开(公告)号：US20080138979A1

公开(公告)日：2008-06-12

申请号：US12018790

申请日：2008-01-23

申请人： Junji NOGUCHI ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji NOGUCHI ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L21/4763

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

摘要翻译： 在形成通过CMP将氧化硅膜39的互连槽40中的Cu互连46a至46e形成之后，然后进行清洗，氧化硅膜39和Cu互连46a至46e的表面是 用还原等离子体（氨等离子体）处理。 然后，没有真空断裂，连续形成盖膜（氮化硅膜）。 该方法使得可以提高通过镶嵌方法形成的铜互连的绝缘击穿电阻（可靠性）。

公开(公告)号：US06815330B2

公开(公告)日：2004-11-09

申请号：US10140112

申请日：2002-05-08

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L214763

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

公开(公告)号：US06797606B2

公开(公告)日：2004-09-28

申请号：US10233469

申请日：2002-09-04

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L214763

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.