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    Optical recording media
    2.
    发明授权
    Optical recording media 失效
    光记录媒体

    公开(公告)号：US5498507A

    公开(公告)日：1996-03-12

    申请号：US394817

    申请日：1995-02-27

    申请人： Tokuhiko Handa ,  Ryo Inaba ,  Susumu Haratani ,  Junji Tominaga

    发明人： Tokuhiko Handa ,  Ryo Inaba ,  Susumu Haratani ,  Junji Tominaga

    IPC分类号： B41M5/26 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/24 ,  G11B7/243 ,  G11B7/254

    CPC分类号： G11B7/257 ,  G11B7/243 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/006 ,  G11B7/258 ,  G11B7/266 ,  Y10S430/146

    摘要： In a phase change type of optical recording medium including on a substrate a lower dielectric layer, a recording layer, a first upper dielectric layer contiguous to said recording layer, a second upper dielectric layer and a reflective layer, the recording layer comprises a recording material containing an element A that represents silver and/or gold, an element B that represents antimony and/or bismuth, an element C that represents tellurium and/or selenium, an element indium, and an element M that represents at least one element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, manganese, tungsten and molybdenum, with the atomic ratio of the elements in said recording material having the following formula:{(A.sub.a B.sub.b C.sub.1-a-b).sub.x (In.sub.0.5 C.sub.0.5).sub.y B.sub.1-x-y }.sub.1-z M.sub.zwherein 0.10.ltoreq.a.ltoreq.0.40, 0.10.ltoreq.b.ltoreq.0.40, 0.20.ltoreq.x.ltoreq.0.80, 0.01.ltoreq.y.ltoreq.0.60, and 0.001.ltoreq.z.ltoreq.0.20. The first upper dielectric layer contains at least one compound selected from the group consisting of aluminum nitride, silicone nitride and aluminum oxide. The second upper dielectric layer is made up of a material that has a thermal conductivity lower than that of said first upper dielectric layer.

    摘要翻译： 在包括在基底上的下介电层，记录层，与所述记录层邻接的第一上电介质层，第二上电介质层和反射层的相变型光记录介质中，所述记录层包括记录材料 含有表示银和/或金的元素A，表示锑和/或铋的元素B，表示碲和/或硒的元素C，元素铟和元素M，其表示选自以下的至少一种元素： 由钛，锆，铪，钒，铌，钽，锰，钨和钼组成的组，所述记录材料中的元素的原子比具有下式：{（AaBbC1-ab）x（In0.5C0。 5）yB1-xy} 1-zMz其中0.10≤i≤0.40,0.10≤b≤0.40,0.20≤x≤0.80,0.01≤y≤0.60， 和0.001≤z≤0.20。 第一上介电层包含至少一种选自氮化铝，氮化硅和氧化铝的化合物。 第二上介电层由热导率低于所述第一上电介质层的材料构成。

    Optical recording method and medium
    3.
    发明授权
    Optical recording method and medium 失效
    光记录方法和介质

    公开(公告)号：US5523140A

    公开(公告)日：1996-06-04

    申请号：US400765

    申请日：1995-03-08

    申请人： Junji Tominaga ,  Tokuhiko Handa ,  Susumu Haratani ,  Ryo Inaba

    发明人： Junji Tominaga ,  Tokuhiko Handa ,  Susumu Haratani ,  Ryo Inaba

    IPC分类号： B41M5/26 ,  G11B7/00 ,  G11B7/0045 ,  G11B7/243 ,  B32B3/00

    CPC分类号： G11B7/243 ,  G11B7/00454 ,  G11B2007/24308 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： A phase change type optical recording medium has a recording layer of a recording material containing elements A, B, and C wherein A is Ag and/or Au, B is Sb and/or Bi, and C is Te and/or Se. Information is recorded by directing a light beam to the recording layer to form recorded marks therein such that the recorded marks are amorphous or microcrystalline while an unrecorded portion of the recording layer remains crystalline, and the A concentration of the unrecorded portion is at least 0.5 atom % higher than the A concentration of the recorded marks. C/N and modulation factor are improved and such improvements are kept even after hot humid storage.

    摘要翻译： 相变型光学记录介质具有记录材料的记录层，其中A，B和C元素A，B和C中的A是Ag和/或Au，B是Sb和/或Bi，C是Te和/或Se。 通过将光束引导到记录层以在其中形成记录标记来记录信息，使得记录的标记是非晶或微晶的，而记录层的未记录部分保持结晶，并且未记录部分的A浓度为至少0.5原子 高于记录标记的A浓度％。 C / N和调制因子得到改善，即使在潮湿潮湿储存之后也能保持这样的改善。

    Method for preparing phase change optical recording medium
    6.
    发明授权
    Method for preparing phase change optical recording medium 失效
    制备相变光记录介质的方法

    公开(公告)号：US5627012A

    公开(公告)日：1997-05-06

    申请号：US598913

    申请日：1996-02-09

    申请人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

    发明人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

    IPC分类号： B41M5/26 ,  C23C14/06 ,  G11B7/0045 ,  G11B7/243 ,  G11B7/26 ,  C23C14/34

    CPC分类号： C23C14/0623 ,  G11B7/243 ,  G11B7/26 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/00454 ,  Y10S430/146

    摘要： An optical recording medium is prepared by forming on a substrate a phase change recording layer comprising elements A, B, C and optional D wherein A is silver and/or gold, B is antimony and/or bismuth, C is tellurium and/or selenium, D is indium or a mixture of indium and aluminum and/or phosphorus. Formation of the recording layer is carried out by the step of sputtering an A--C base metal and the step of sputtering a B base metal optionally containing D in this successive order or reverse order; or by the step of sputtering an A--C base metal, the step of sputtering a B base metal, and the step of sputtering a D base metal in this successive order or reverse order. Since the resulting recording layer is already crystallized, the method eliminates a need for extra initialization.

    摘要翻译： 通过在基板上形成包含元素A，B，C和任选D的相变记录层来制备光记录介质，其中A是银和/或金，B是锑和/或铋，C是碲和/或硒 ，D是铟或铟和铝和/或磷的混合物。 记录层的形成通过溅射A-C基体金属的步骤和以任选地含有D的B基底金属以相继的顺序或相反的顺序溅射的步骤进行; 或通过溅射A-C基底金属的步骤，溅射B母材的步骤，以及以相继的顺序或相反顺序溅射D母材的步骤。 由于所得记录层已经结晶，所以该方法消除了对额外的初始化的需要。

    Optical information medium
    8.
    发明授权
    Optical information medium 失效
    光信息媒体

    公开(公告)号：US5569517A

    公开(公告)日：1996-10-29

    申请号：US462286

    申请日：1995-06-05

    申请人： Junji Tominaga ,  Susumu Haratani ,  Ryo Inaba ,  Tsuneo Kuwahara

    发明人： Junji Tominaga ,  Susumu Haratani ,  Ryo Inaba ,  Tsuneo Kuwahara

    IPC分类号： G11B7/0045 ,  G11B7/005 ,  G11B7/006 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B11/10 ,  G11B11/105 ,  B32B3/00

    CPC分类号： G11B7/00454 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B11/10515 ,  G11B11/10584 ,  G11B11/10593 ,  G11B2007/24304 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/0062 ,  Y10S428/913 ,  Y10S430/146 ,  Y10T428/21

    摘要： An optical information medium has on a substrate (2) with information-carrying pits (21), a light transmittance control layer (3) including a lower dielectric layer (31), a mask layer (32) and an upper dielectric layer (33). The mask layer has an original state before irradiation of reading light. Upon irradiation of a reading light beam to define a beam spot, the mask layer undergoes a crystal-to-crystal transition in a region (H) of the beam spot depending on the intensity distribution of the beam spot. Multiple reflection condition changes in the transition portion so that the beam spot contributing to read-out is limited to the transition or transition-free region (H or L). The transition temperature is in the range of 200.degree. to 450.degree. C. The mask layer returns to the original state after passage of the beam spot. The invention is also applicable to an optical recording medium having a recording layer above or below the transmittance control layer.

    摘要翻译： 光信息介质在具有信息输送凹坑（21）的基板（2）上，具有下介电层（31），掩模层（32）和上介电层（33）的透光控制层（3） ）。 掩模层在读取光照射之前具有原始状态。 在照射读取光束以限定束斑时，掩模层根据束斑的强度分布在束斑的区域（H）中经历晶体到晶体的转变。 过渡部分中的多重反射条件发生变化，使得有助于读出的光束点被限制在过渡或过渡区域（H或L）。 转变温度在200〜450℃的范围内。通过光斑后，掩模层返回到原始状态。 本发明也可应用于具有在透光控制层之上或之下的记录层的光记录介质。

    Current sensor
    10.
    发明授权
    Current sensor 有权
    电流传感器

    公开(公告)号：US08593134B2

    公开(公告)日：2013-11-26

    申请号：US13042833

    申请日：2011-03-08

    申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

    发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

    IPC分类号： G01R15/20

    CPC分类号： G01R15/205 ,  B82Y25/00 ,  G01R33/093

    摘要： A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

    摘要翻译： 电流传感器包括各自具有电阻值的第一至第四磁阻元件; 以及向磁阻元件施加补偿磁场的补偿电流线。 桥接电路由磁阻元件形成。 第一和第三磁阻元件的电阻值在一个递减方向上一起变化。 第二和第四磁阻元件的电阻值在另一个增加/减小方向上一起变化。 响应于在第三和第四结之间的电压施加，补偿电流由第一和第二结之间的电位差产生。 补偿电流线包括第一至第四线部分。 每个线部分沿与磁阻元件的延伸方向相同的方向延伸，与相应的磁阻元件重叠。 基于补偿电流检测要检测的电流。