公开(公告)号：US07051724B2

公开(公告)日：2006-05-30

申请号：US10481637

申请日：2002-12-13

申请人： Junpei Uruno ,  Yasuhiko Kouno

发明人： Junpei Uruno ,  Yasuhiko Kouno

IPC分类号： F02P3/00

CPC分类号： H01L29/7395 ,  F02D2041/2048 ,  F02D2041/2051 ,  F02D2041/2058 ,  F02D2041/2075 ,  F02P3/051 ,  F02P3/053 ,  F02P3/055

摘要： An igniter of the present invention has an insulated gate semiconductor device having a collector terminal, an emitter terminal and a gate terminal, a current control circuit which limits current by controlling voltage at the gate terminal when current for flowing through the insulated gate semiconductor device exceeds a fixed value, a voltage monitor circuit for detecting a potential of the collector, and a control current adjusting circuit for controlling current which flows through the gate terminal by receiving output from the voltage monitor circuit.

摘要翻译： 本发明的点火器具有绝缘栅半导体器件，其具有集电极端子，发射极端子和栅极端子，电流控制电路，当流过绝缘栅极半导体器件的电流超过时，通过控制栅极端子处的电压来限制电流 固定值，用于检测集电极的电位的电压监视电路，以及控制电流调节电路，用于通过接收来自电压监视电路的输出来控制流过栅极端的电流。

公开(公告)号：US06803294B2

公开(公告)日：2004-10-12

申请号：US10413562

申请日：2003-04-15

申请人： Yasuhiko Kouno ,  Hideo Miura ,  Nobuyoshi Matsuura ,  Masaharu Kubo

发明人： Yasuhiko Kouno ,  Hideo Miura ,  Nobuyoshi Matsuura ,  Masaharu Kubo

IPC分类号： H01L2146

CPC分类号： H01L29/66333 ,  H01L21/304 ,  H01L21/78 ,  H01L24/05 ,  H01L24/45 ,  H01L29/7395 ,  H01L2224/04042 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4911 ,  H01L2224/73265 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Gate oxide films, gate electrodes, base regions and emitter regions, which constitute IGBTs, are formed on a semiconductor wafer. A silicon oxide film is formed on the gate electrodes. Further, an emitter electrode is formed thereabove, and a passivation film is formed over the emitter electrode. Thereafter, an internal area of a back surface of the semiconductor wafer is polished to form a protrusion at its outer peripheral portion. Afterwards, an impurity is injected from the back surface of the semiconductor wafer to form a collector region. After a collector electrode is further formed, the semiconductor wafer is mounted on a stage smaller than the internal area and subjected to dicing along scribe areas. Thus, the strength of the semiconductor wafer is held by the protrusion, and cracking or the like of the semiconductor wafer can be reduced owing to the execution of the dicing in the above-described manner.

摘要翻译： 构成IGBT的栅极氧化膜，栅极电极，基极区域和发射极区域形成在半导体晶片上。 在栅电极上形成氧化硅膜。 此外，在上方形成发射电极，在发射电极上形成钝化膜。 此后，对半导体晶片的背面的内部区域进行研磨，在其外周部形成突起。 之后，从半导体晶片的背面注入杂质，形成集电极区域。 在进一步形成集电极之后，将半导体晶片安装在小于内部区域的台上，并沿划线区进行切割。 因此，半导体晶片的强度由突起保持，并且由于以上述方式执行切割，可以减小半导体晶片的破裂等。

公开(公告)号：US06821867B2

公开(公告)日：2004-11-23

申请号：US10421927

申请日：2003-04-24

申请人： Nobuyoshi Matsuura ,  Yasuhiko Kouno ,  Hideo Miura ,  Masaharu Kubo

发明人： Nobuyoshi Matsuura ,  Yasuhiko Kouno ,  Hideo Miura ,  Masaharu Kubo

IPC分类号： H01L2178

CPC分类号： H01L29/7811 ,  H01L23/544 ,  H01L23/562 ,  H01L27/092 ,  H01L29/0657 ,  H01L29/66242 ,  H01L29/66734 ,  H01L29/7371 ,  H01L29/7813 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device and a manufacturing method thereof which can realize fine processing while preventing a warp of a semiconductor wafer. In forming a plurality of semiconductor elements on a semiconductor wafer, grooves for attenuating stress are formed in scribe regions defined between semiconductor element forming regions. Here, the grooves are formed in the scribe regions except for alignment pattern forming regions such that the alignment pattern forming regions remain in the scribe regions. On the alignment pattern forming regions of the scribe regions, an alignment pattern or a TEG pattern which is used in a photolithography step is formed.

摘要翻译： 本发明提供一种能够在防止半导体晶片翘曲的同时实现精细加工的半导体器件及其制造方法。 在半导体晶片上形成多个半导体元件时，在形成半导体元件的区域之间的划线区域形成用于衰减应力的沟槽。 这里，除了对准图案形成区域之外的划线区域中形成凹槽，使得取向图案形成区域保留在划线区域中。 在划线区域的取向图案形成区域中，形成在光刻工序中使用的取向图案或TEG图案。