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公开(公告)号：US09733142B2
公开(公告)日：2017-08-15
申请号：US14436280
申请日：2013-10-15
发明人： Takuro Ishikawa , Yuji Kanai , Kazuhiro Matsunami
CPC分类号： G01L19/069 , G01L9/0054 , G01L19/0645 , G01L19/142 , H01L2924/0002 , H01L2924/10253 , H01L2924/3025 , H01L2924/00
摘要： When a main body of a sensor chip (1) is in a grounded state, a shield layer (71) constituting a shield electrode formed on a circuit layer (72) is grounded through a resistor (46).
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公开(公告)号：US20150285703A1
公开(公告)日：2015-10-08
申请号：US14436280
申请日：2013-10-15
发明人： Takuro Ishikawa , Yuji Kanai , Kazuhiro Matsunami
IPC分类号： G01L19/06
CPC分类号： G01L19/069 , G01L9/0054 , G01L19/0645 , G01L19/142 , H01L2924/0002 , H01L2924/10253 , H01L2924/3025 , H01L2924/00
摘要： When a main body of a sensor chip (1) is in a grounded state, a shield layer (71) constituting a shield electrode formed on a circuit layer (72) is grounded through a resistor (46).
摘要翻译： 当传感器芯片（1）的主体处于接地状态时，形成在电路层（72）上的构成屏蔽电极的屏蔽层（71）通过电阻（46）接地。
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公开(公告)号：US09245851B2
公开(公告)日：2016-01-26
申请号：US14328222
申请日：2014-07-10
IPC分类号： H01L23/544 , H01L21/768 , H01L23/528
CPC分类号： H01L23/544 , H01L21/76895 , H01L23/528 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a plurality of first opening portions formed in an interlayer insulating film. The surface is covered with a metal film with a surface having concavities and convexities which scatter reflected light. Size of the first opening portion is of the same level as a contact hole of a component and cannot be recognized by an image recognition apparatus. The metal film can be recognized by the image recognition apparatus. By forming a TiN film serving as a reflection prevention film on an end of the metal film, portions that can easily scatter light and a portion that cannot easily reflect light are adjacent in an alignment marker. A passivation film is formed on the interlayer insulating film and the TiN film. Recessed portions disposed in the metal film are exposed to a second opening portion formed in the passivation film and the TiN film.
摘要翻译： 半导体器件具有形成在层间绝缘膜中的多个第一开口部。 该表面覆盖有表面具有散射反射光的凹凸的金属膜。 第一开口部分的尺寸与部件的接触孔具有相同的水平，并且不能被图像识别装置识别。 金属膜可以被图像识别装置识别。 通过在金属膜的端部形成用作防反射膜的TiN膜，可以容易地散射光的部分和不容易反射光的部分在对准标记中相邻。 在层间绝缘膜和TiN膜上形成有钝化膜。 设置在金属膜中的凹入部分暴露于形成在钝化膜和TiN膜中的第二开口部分。
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4.发明授权Semiconductor integrated circuit and semiconductor physical quantity sensor device 有权半导体集成电路和半导体物理量传感器装置公开(公告)号：US08934309B2
公开(公告)日：2015-01-13
申请号：US13941001
申请日：2013-07-12
CPC分类号： G11C16/102 , G01R1/20 , G11C16/10 , G11C16/12 , G11C16/30 , G11C2216/30
摘要： In aspects of the invention, an auxiliary memory circuit includes a shift register wherein a plurality of flip-flops are cascade-connected and a plurality of inversion circuits that invert and output outputs of each D flip-flop. A main memory circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and an EPROM connected in series to the switch and driven by a writing voltage. A variable resistance circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and a resistor connected in series to the switch. With aspects of the invention, it is possible for terminals of the writing voltage and a writing voltage to be commonized. Also, it is possible to provide a low-cost semiconductor physical quantity sensor device that can carry out electrical trimming with the voltage when writing into the EPROM kept constant.
摘要翻译： 在本发明的方面中，辅助存储电路包括一个移位寄存器，其中多个触发器是级联的，以及多个反相电路，其反相和输出每个D触发器的输出。 主存储器电路包括根据来自辅助存储器电路的信号起作用的开关和与开关串联连接并由写入电压驱动的EPROM。 可变电阻电路包括根据来自辅助存储器电路的信号起作用的开关和与开关串联连接的电阻器。 在本发明的方面中，可以使写入电压和写入电压的端子共同化。 此外，可以提供一种低成本的半导体物理量传感器装置，其能够在写入EPROM中保持恒定时能够进行电压修整。
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公开(公告)号：US11422049B2
公开(公告)日：2022-08-23
申请号：US16794231
申请日：2020-02-19
摘要： It is desired to further reduce output errors which are caused by temperature characteristics. A sensor device is provided which includes a sense circuit which outputs a sense signal according to a magnitude of a detected physical quantity, an amplifier circuit which amplifies the sense signal, and a switching unit which switches at least one of a sensitivity of the sense circuit and an offset of the amplifier circuit discontinuously according to whether a temperature measurement value exceeds a threshold value.
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公开(公告)号：US11415473B2
公开(公告)日：2022-08-16
申请号：US17033914
申请日：2020-09-27
发明人： Kazuhiro Matsunami
摘要： If the bridge circuit fails due to damage of the diaphragm, the damage is detected at an early stage. A pressure sensor comprises: a substrate provided with a diaphragm; a bridge circuit having four resistor devices provided at the diaphragm, the bridge circuit being applied with high-voltage-side voltage and low-voltage-side voltage, and having two output terminals; a detecting unit for detecting a first output at a first output terminal and a second output at a second output terminal, each output terminal being of the bridge circuit; and a failure detecting unit for detecting failure of the bridge circuit based on a detection result at the detecting unit.
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7.发明授权公开(公告)号：US11211133B2
公开(公告)日：2021-12-28
申请号：US16882531
申请日：2020-05-24
摘要： To detect deterioration of a correction memory, provided is a semiconductor device including the correction memory that stores therein correction data for correcting a correction target; a correcting section that corrects a detection value of a sensor element, using correction data read from the correction memory; a diagnosing section that diagnoses the correction memory, using the correction data read from the correction memory; and a control section that controls reading conditions used when reading the correction data from the correction memory, wherein the control section causes a first reading condition, used when reading the correction data for correcting a correction target, to differ from a second reading condition, which is used when reading the correction data for the diagnosis.
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公开(公告)号：US20210020257A1
公开(公告)日：2021-01-21
申请号：US16882531
申请日：2020-05-24
摘要： To detect deterioration of a correction memory, provided is a semiconductor device including the correction memory that stores therein correction data for correcting a correction target; a correcting section that corrects a detection value of a sensor element, using correction data read from the correction memory; a diagnosing section that diagnoses the correction memory, using the correction data read from the correction memory; and a control section that controls reading conditions used when reading the correction data from the correction memory, wherein the control section causes a first reading condition, used when reading the correction data for correcting a correction target, to differ from a second reading condition, which is used when reading the correction data for the diagnosis.
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公开(公告)号：US10197464B2
公开(公告)日：2019-02-05
申请号：US15198530
申请日：2016-06-30
摘要： A semiconductor physical quantity sensor device having a power source terminal for receiving a power source potential, a ground terminal for receiving a ground potential, and an output terminal. The semiconductor physical quantity sensor includes a sensor configured to generate a signal, an amplifier configured to amplify the signal, and to output the amplified signal through the output terminal, a first resistor electrically connected between the power source terminal and the amplifier, a second resistor electrically connected between the output terminal and the ground terminal, and a filter electrically connected between the power source terminal and the sensor, and including a third resistor and a capacitor.
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公开(公告)号：US10381827B2
公开(公告)日：2019-08-13
申请号：US15609535
申请日：2017-05-31
IPC分类号： H02H9/04 , H01L23/528 , H01L27/02 , H01L27/06 , H01L27/088 , H03K19/003 , H02H3/20 , H02H11/00 , H03K3/356 , H01L21/8234
摘要： A protection circuit includes a first PMOS and a first PDMOS receiving input of voltage of a voltage dividing point of voltage input from an external power supply terminal, and a second PMOS and a second PDMOS receiving input of drain output voltage of the first PDMOS. The first PMOS is connected on the external power supply terminal side of the first PDMOS, and the second PMOS is connected on the external power supply terminal side of the second PDMOS. During overvoltage application, the voltage of the voltage dividing point is clamped to the breakdown voltage of a Zener diode, the second PDMOS turns OFF, and supply to an integrated circuit protected from overvoltage is cut off. When the voltage source is connected in reverse, parasitic diodes of the first and second PMOSs are reverse-biased and the flow of current in a path through the parasitic diodes is inhibited.
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