公开(公告)号：US20140138583A1

公开(公告)日：2014-05-22

申请号：US14162383

申请日：2014-01-23

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yumi FUKUDA ,  Hironori ASAI

IPC: C09K11/77

CPC classification number: C09K11/7728 ,  C04B35/597 ,  C04B2235/3217 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C09K11/0883 ,  C09K11/7734 ,  H01L33/504 ,  H01L33/507 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

Abstract translation: 本发明提供了量子效率和温度特性都优异的荧光物质，并且还提供了利用荧光物质的发光装置。 该荧光物质含有包含金属元素M，金属元素M以外的三价元素M1，金属元素M以外的四价元素M2，O和N中的任一种或两者的无机化合物。在无机化合物中， 金属元素M部分地被发光中心元件R替代。荧光物质的晶体结构基本上与Sr 3 Al 3 Si 13 O 2 N 21相同，但M1-N和M2-N的化学键长度在±15％的范围内基于 分别由Sr3Al3Si13O2N21的晶格常数和原子坐标计算Al-N和Si-N。 当用250〜500nm的光激发时，荧光物质发射具有在490〜580nm范围内的峰值的发光。

公开(公告)号：US20150034968A1

公开(公告)日：2015-02-05

申请号：US14516616

申请日：2014-10-17

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shinji SAITO ,  Rei HASHIMOTO ,  Mizunori EZAKI ,  Shinya NUNOUE ,  Hironori ASAI

IPC: H01L31/167 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/024

CPC classification number: H01L31/167 ,  H01L31/00 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02327 ,  H01L31/024 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/06875 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  H01L31/1884 ,  H01L33/0075 ,  H01L33/30 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp

Abstract translation: 实施例的光电转换元件是通过接收具有具有峰值能量Ap（eV）（其中1＆nlE; p＆nlE; n和2＆nlE; n）的n个发光峰的照明光1.59＆amp; （eV）（其中1＆nlE; p＆nlE; n和2＆nlE; n）的全宽度，其中光电转换元件包括具有带隙能量Bq（eV）的m个光电转换层（其中1＆nlE; q＆nlE ; m和2＆nlE; m＆nlE; n），并且m个光电转换层各自满足关于n个发光峰中的任一个的Ap-Fp

公开(公告)号：US20140048818A1

公开(公告)日：2014-02-20

申请号：US13953029

申请日：2013-07-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shinji SAITO ,  Rei HASHIMOTO ,  Mizunori EZAKI ,  Shinya NUNOUE ,  Hironori ASAI

IPC: H01L33/30 ,  H01L33/00

CPC classification number: H01L31/167 ,  H01L31/00 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02327 ,  H01L31/024 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/06875 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  H01L31/1884 ,  H01L33/0075 ,  H01L33/30 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp

Abstract translation: 实施例的光电转换元件是通过接收具有峰值能量Ap（eV）的n个发光峰值（其中1≤p≤n和2n）为1.59 @ Ap @的照明光进行光电转换的光电转换元件， 3.26和半峰全宽度Fp（eV）（其中1 @ p @ n和2 @ n），其中光电转换元件包括具有带隙能量Bq（eV）的m个光电转换层（其中1 @ m和2 @ m @ n），并且m个光电转换层各自满足关于n个发光峰中的任一个的Ap-Fp