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公开(公告)号：US20220352219A1
公开(公告)日：2022-11-03
申请号：US17680184
申请日：2022-02-24
发明人： Mariko SHIMIZU , Ikuo FUJIWARA , Keita SASAKI , Kazuaki OKAMOTO , Honam KWON , Kazuhiro SUZUKI
IPC分类号： H01L27/146 , G01S7/481
摘要： According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.
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公开(公告)号：US20180231621A1
公开(公告)日：2018-08-16
申请号：US15705579
申请日：2017-09-15
发明人： Yoshihiro HIGASHI , Michiko HARA , Tomohiko NAGATA , Shiori KAJI , Yoshihiko FUJI , Akiko YUZAWA , Kenji OTSU , Kazuaki OKAMOTO , Shotaro BABA
IPC分类号： G01R33/09
CPC分类号： G01R33/093
摘要： According to one embodiment, a sensor includes a first film, a first sensor portion, a driving portion, and a processor. The first sensor portion is provided at the first film. The first sensor portion includes a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first film and the first magnetic layer. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The driving portion causes the first film to deform at a first frequency. The processor outputs a third signal based on a first signal and a second signal. The first signal relates to the first frequency. The second signal is output from the first sensor portion.
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公开(公告)号：US20150271586A1
公开(公告)日：2015-09-24
申请号：US14584476
申请日：2014-12-29
发明人： Hideaki FUKUZAWA , Masatoshi SAKURAI , Masayuki KII , Yoshihiko FUJI , Michiko HARA , Yoshihiro HIGASHI , Kenji OTSU , Akiko YUZAWA , Kazuaki OKAMOTO
CPC分类号： G01L9/0051 , G01L9/16 , H04R19/005 , H04R19/04
摘要： According to one embodiment, a pressure sensor includes: a base body; a sensor section; and a processing circuit. The sensor section includes: a transducing thin film; a first strain sensing element; and a second strain sensing element. The transducing thin film has a film surface and is flexible. The processing circuit is configured to output as an output signal at least one of a first signal obtained from the first strain sensing element upon application of external pressure to the transducing thin film and a second signal obtained from the second strain sensing element upon application of the external pressure to the transducing thin film.
摘要翻译： 根据一个实施例，压力传感器包括：基体; 传感器部分; 和处理电路。 传感器部分包括：传感薄膜; 第一应变传感元件; 和第二应变传感元件。 换能薄膜具有膜表面并且是柔性的。 处理电路被配置为当施加外部压力到转换薄膜时从第一应变感测元件获得的第一信号中的至少一个输出作为输出信号，以及在应用第二应变感测元件时从第二应变感测元件获得的第二信号 对转换薄膜的外部压力。
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4.发明公开公开(公告)号：US20240170011A1
公开(公告)日：2024-05-23
申请号：US18364747
申请日：2023-08-03
发明人： Kazuaki OKAMOTO , Yousuke ISOWAKI
CPC分类号： G11B5/09 , G11B5/4886 , G11B5/59627
摘要： According to one embodiment, a data processor includes an interface section and a processor. The interface section is configured to acquire partial data relating to a control condition of a magnetic recording/reproducing device. The processor is configured to process the partial data. The processor is configured to derive a first data by processing the partial data with a first model based on characteristics of the partial data, a first resolution of the first data being higher than a partial resolution of the partial data. The processor is configured to derive a second data by processing the partial data with a second model based on the characteristic. The second model is different from the first model. A second resolution of the second data being higher than the partial resolution.
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公开(公告)号：US20210293967A1
公开(公告)日：2021-09-23
申请号：US17015774
申请日：2020-09-09
发明人： Ikuo FUJIWARA , Honam KWON , Keita SASAKI , Kazuhiro SUZUKI , Masaki ATSUTA , Mariko SHIMIZU , Kazuaki OKAMOTO
IPC分类号： G01S17/931 , H01L31/107 , G01S17/89 , G01S7/481
摘要： According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.
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公开(公告)号：US20180226572A1
公开(公告)日：2018-08-09
申请号：US15699813
申请日：2017-09-08
CPC分类号： H01L43/10 , B32B15/043 , B32B2307/208 , B32B2457/00 , G11B5/3906 , G11B5/4833 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to an embodiment, a magnetic element includes a first layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second layer, and a third magnetic layer. The first layer includes ruthenium. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second layer includes tantalum. The second layer contacts the first layer and is provided between the first layer and the second magnetic layer. A lattice plane spacing of the second layer in a first direction is not less than 0.23 nm and not more than 0.25 nm. The first direction is from the first layer toward the first magnetic layer. The third magnetic layer includes manganese. The third magnetic layer is provided between the second layer and the second magnetic layer.
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公开(公告)号：US20230296776A1
公开(公告)日：2023-09-21
申请号：US17823596
申请日：2022-08-31
发明人： Kazuaki OKAMOTO , Honam KWON , Kazuhiro SUZUKI
IPC分类号： G01S17/89 , H01L31/107 , H01L27/144
CPC分类号： G01S17/89 , H01L31/107 , H01L27/1446 , H01L31/022408
摘要： According to one embodiment, a light detection device includes a first region, a second region, a first electrode, and a second electrode. The first region includes a plurality of first semiconductor light detection elements, and a plurality of first lenses respectively located on the plurality of first semiconductor light detection elements. The second region includes a plurality of second semiconductor light detection elements. No lens is located directly above the plurality of second semiconductor light detection elements. The first electrode is electrically connected with the plurality of first semiconductor light detection elements. The second electrode is electrically connected with the plurality of second semiconductor light detection elements.
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公开(公告)号：US20220223631A1
公开(公告)日：2022-07-14
申请号：US17445590
申请日：2021-08-20
发明人： Kazuaki OKAMOTO , Honam KWON , Mariko SHIMIZU , Kazuhiro SUZUKI , Keita SASAKI , Ikuo FUJIWARA
IPC分类号： H01L27/144 , G01S7/481 , G01S17/10 , H01L31/0232 , H01L31/0352 , H01L31/107
摘要： According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.
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公开(公告)号：US20200049574A1
公开(公告)日：2020-02-13
申请号：US16281180
申请日：2019-02-21
摘要： According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.
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公开(公告)号：US20190272934A1
公开(公告)日：2019-09-05
申请号：US16119008
申请日：2018-08-31
发明人： Kazuaki OKAMOTO , Yoshihiko FUJI , Shiori KAJI , Yoshihiro HIGASHI , Tomohiko NAGATA , Shotaro BABA , Michiko HARA
摘要： According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.
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