PATTERN FORMATION DEVICE, METHOD FOR PATTERN FORMATION, AND PROGRAM FOR PATTERN FORMATION
    1.
    发明申请
    PATTERN FORMATION DEVICE, METHOD FOR PATTERN FORMATION, AND PROGRAM FOR PATTERN FORMATION 审中-公开
    图案形成装置,图案形成方法和图案形成程序

    公开(公告)号:US20140346701A1

    公开(公告)日:2014-11-27

    申请号:US14454955

    申请日:2014-08-08

    Abstract: According to one embodiment, a pattern formation device that presses a template that includes a concave and convex part onto a transferring object and that forms a pattern in which a shape of the concave and convex part is transferred is provided. The device includes: a calculation part; an adjustment part; and a transfer. The calculation part calculates, using design information of the pattern, the distribution of force applied to the pattern at a time of releasing the template pressed onto the transferring object from the transferring object. The adjustment part adjusts forming conditions of the pattern in order to uniformly approach the distribution of force calculated by the calculation part. The transfer part transfers the shape of the concave and convex part to the transferring object according to the forming conditions adjusted by the adjustment part.

    Abstract translation: 根据一个实施例,提供了一种图案形成装置,其将包括凹凸部分的模板按压到转印体上并形成其中转移了凹凸部分的形状的图案。 该装置包括:计算部分; 调整部分; 和转移。 所述计算部使用所述图案的设计信息,计算从所述转印体上释放压印在所述转印体上的所述模板时施加到所述图案的力的分布。 调整部调整图案的成形条件,以均匀地接近由计算部计算出的力的分布。 转印部件根据由调节部件调整的成形条件将凹凸部的形状转印到转印体上。

    DEVICE SUBSTRATE, METHOD OF MANUFACTURING DEVICE SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    DEVICE SUBSTRATE, METHOD OF MANUFACTURING DEVICE SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    器件基板,制造器件基板的方法和制造半导体器件的方法

    公开(公告)号:US20160372333A1

    公开(公告)日:2016-12-22

    申请号:US15010041

    申请日:2016-01-29

    CPC classification number: H01L21/0334 G03F7/0002

    Abstract: According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A main face on which the device element is disposed includes a patterning region on which a resist is to be applied during an imprint process, and a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate. The bevel region includes a region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region. The upper surface of the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the patterning region, at a boundary between the patterning region and the bevel region.

    Abstract translation: 根据一个实施例,器件衬底包括多层膜,其包括构成器件元件的膜并设置在衬底上。 设置有元件的主面包括在压印处理期间在其上施加抗蚀剂的构图区域,以及设置为从图案形成区域的周边部分到端部的区域的斜面区域 器件衬底。 斜面区域包括相对于图案化区域的上表面,斜面区域的上表面朝向器件衬底的端部变低的区域。 在图案化区域和斜面区域的边界处,斜面区域的上表面相对于图案化区域的上表面具有10°以上且90°以下的倾斜角。

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