Abstract:
A method for processing a substrate exposes a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed, performs surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed, supplies the resist material onto the substrate to be processed after the surface processing, and transfers a template pattern to the resist material.
Abstract:
An imprinting template substrate has a protruded portion, and a protective layer on a side surface of the protruded portion, and having a contact angle higher with respect to a resist material than a contact angle of the protruded portion with respect to the resist material. Even when the template is pressed to the resist, the resist hardly adheres to the side surface of the template. An imprinting process using the present template forms a pattern on a semiconductor substrate and then a semiconductor apparatus is manufactured.
Abstract:
A method for manufacturing an imprinting template substrate forms a protruded mesa portion by removing a part of the substrate, and forms a film containing silicon, carbon, and fluorine, on a side surface of the mesa portion. Even when the template is pressed to the resist, the resist barely adheres to the side surface of the template. Therefore, no defect that the resist having adhered to the side surface of the template falls on the wafer and then defective parts increase, occurs.