公开(公告)号：US20160139034A1

公开(公告)日：2016-05-19

申请号：US14657209

申请日：2015-03-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toru MIKAMI

IPC: G01N21/25 ,  G01J3/02 ,  G01B11/02 ,  G01J3/44

CPC classification number: G01B11/02 ,  G01J3/0264 ,  G01J3/4412 ,  G01J2003/284 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/95615

Abstract: In accordance with an embodiment, a measurement apparatus includes a library creation unit, a spectral profile acquiring unit, and a measurement unit. The library creation unit creates a library in which a layer stack model is matched to a theoretical profile regarding a pattern of stacked layers. The spectral profile acquiring unit acquires an actual measured profile by applying light to a measurement target pattern obtained when the pattern is actually created. The measurement unit measures the sectional shape of the measurement target pattern by performing fitting of the theoretical profile to the actual measured profile. The layer stack model is created by calculating a feature value that reflects the intensity of reflected light from an interface for each of the layers, determining a priority order of analysis from the feature value, and sequentially performing fitting of the theoretical profile to the measured profile in the determined priority order.

Abstract translation: 根据实施例，测量装置包括库创建单元，光谱轮廓获取单元和测量单元。 库创建单元创建库，其中层堆栈模型与关于层叠图案的理论简档相匹配。 光谱轮廓获取单元通过将光施加到当实际创建图案时获得的测量目标图案来获取实际测量的轮廓。 测量单元通过将理论曲线拟合到实际测量曲线来测量测量目标图案的截面形状。 通过计算反映来自每个层的界面的反射光的强度的特征值来创建层堆叠模型，从特征值确定分析的优先级顺序，并且顺序地将理论分布拟合到测量的轮廓 以确定的优先顺序。

公开(公告)号：US20140238605A1

公开(公告)日：2014-08-28

申请号：US14021221

申请日：2013-09-09

Applicant: Kabushiki Kaisha Toshiba

Inventor： Toru MIKAMI

IPC: H01L21/66 ,  G01B11/06

CPC classification number: G01B11/0625 ,  B24B37/013 ,  B24B49/12 ,  H01L21/67253

Abstract: In accordance with an embodiment, a film thickness monitoring method includes applying light to a laminated body, detecting reflected light from the laminated body and outputting signals corresponding to the detected light, and judging whether a film thickness of an opaque film which is a polishing target has reached a desired film thickness. The laminated body includes a transparent film and the opaque film on the transparent film. A comparison value between the signal before polishing the opaque film and the signal after starting the polishing is obtained at predetermined time intervals, and whether the film thickness of the opaque film has reached the desired film thickness is judged based on a relationship between the comparison value of the signals and a predetermined threshold value.

Abstract translation: 根据实施方式，膜厚监视方法包括：对层叠体施加光，检测来自层叠体的反射光并输出与​​检测出的光对应的信号，判断作为研磨对象物的不透明膜的膜厚 已经达到所需的膜厚度。 层压体包括透明膜和透明膜上的不透明膜。 以预定的时间间隔获得抛光不透明膜之前的信号和开始抛光后的信号之间的比较值，并且基于比较值之间的关系来判断不透明膜的膜厚是否达到期望的膜厚度 的信号和预定的阈值。

公开(公告)号：US20140224425A1

公开(公告)日：2014-08-14

申请号：US14021340

申请日：2013-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toru MIKAMI

IPC: H01L21/66 ,  H01L21/67

CPC classification number: H01L22/12 ,  B24B37/013 ,  B24B37/04 ,  B24B49/12 ,  G01B11/0625 ,  H01L21/67253

Abstract: In accordance with an embodiment, a film thickness monitoring method includes applying light to a substrate, which is a processing target, in a semiconductor manufacturing process involving rotation of the substrate, detecting reflected light from the substrate, and calculating a thickness of a film on the substrate. The thickness of the film is calculated from intensity of the reflected light detected in an identified time zone in which incident light passes a desired region on the substrate during the semiconductor manufacturing process.

Abstract translation: 根据实施例，膜厚监视方法包括在涉及基板的旋转的半导体制造工艺中对作为处理对象的基板施加光，检测来自基板的反射光，并计算膜的厚度 底物。 在半导体制造过程中，通过入射光通过衬底上的期望区域的识别时区中检测到的反射光的强度来计算膜的厚度。