公开(公告)号：US20130288397A1

公开(公告)日：2013-10-31

申请号：US13932974

申请日：2013-07-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Masaru Tokou ,  Tadashi Kai ,  Makato Nagamine ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Taro Nagahama ,  Akio Fukushima ,  Koji Ando

IPC分类号： H01L43/10

CPC分类号： H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

摘要翻译： 根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜 以及从包括Co和Fe的第二组中选择的元素，包括垂直于膜表面的磁各向异性的第二磁性层和可变的磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。 磁性膜包括非晶相和粒径为0.5nm以上的晶体。

公开(公告)号：US09076960B2

公开(公告)日：2015-07-07

申请号：US14017237

申请日：2013-09-03

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Masahiko Nakayama ,  Tatsuya Kishi ,  Masaru Toko ,  Akiyuki Murayama ,  Yutaka Hashimoto ,  Hisanori Aikawa

IPC分类号： H01L43/00 ,  H01L43/10 ,  H01L43/08

CPC分类号： H01L43/10 ,  H01L43/08

摘要： A magnetic memory element includes a memory layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is variable, a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is not variable, and a tunnel barrier layer which is interposed between the memory layer and the reference layer. The memory layer is made of an alloy including cobalt (Co) andiron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer.

摘要翻译： 磁存储元件包括在垂直方向上在其膜表面上具有磁各向异性的记录层，其磁化方向可变，在垂直方向上在其膜表面上具有磁各向异性的参考层，其磁化方向 并且是介于存储层和参考层之间的隧道势垒层。 记忆层由包括钴（Co）和铁（Fe）的合金制成。 多个氧原子存在于存储层的两个界面上。

公开(公告)号：US09653138B1

公开(公告)日：2017-05-16

申请号：US15264539

申请日：2016-09-13

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yutaka Hashimoto ,  Katsuya Nishiyama

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1677 ,  G11C2207/002

摘要： A memory includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a third magnetic layer synthetic-antiferromagnetic-coupled with the second magnetic layer, and a controller controlling a read operation and a write operation. The write operation includes a first operation, a second operation and a third operation. A first potential of the first magnetic layer is larger than a second potential of the third magnetic layer in the first operation. A third potential of the third magnetic layer is larger than a fourth potential of the first magnetic layer in the second operation. A fifth potential of the first magnetic layer is larger than a sixth potential of the third magnetic layer in the third operation.

公开(公告)号：US09647034B2

公开(公告)日：2017-05-09

申请号：US15065829

申请日：2016-03-09

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Masahiko Nakayama ,  Yutaka Hashimoto ,  Yasuyuki Sonoda ,  Tadashi Kai ,  Kenji Noma

IPC分类号： H01L29/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L27/222 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive memory device includes a stacked layer structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on the first magnetic layer, which is opposite the nonmagnetic layer. The third magnetic layer includes a first magnetic material portion and a second magnetic material portion provided between the stacked layer structure and the first magnetic material portion. The saturation magnetization of the second magnetic material portion is smaller than that of the first magnetic material portion.