公开(公告)号：US12142324B2

公开(公告)日：2024-11-12

申请号：US17681547

申请日：2022-02-25

Applicant: KIOXIA CORPORATION

Inventor： Tomoya Sanuki ,  Keisuke Nakatsuka ,  Daisuke Fujiwara ,  Toshio Fujisawa

IPC: G11C16/08 ,  G11C8/12 ,  G11C16/04 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/34

Abstract: A semiconductor storage device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory strings, a plurality of word lines, each of which is connected to the memory strings, and a plurality of bit lines connected to the memory strings, respectively. The plurality of bit lines are grouped into a plurality of bit line groups. The control circuit is configured to receive a read command and first address information specifying one or more of the bit line groups. The control circuit is configured to, in response to the read command, read data selectively from each memory string connected to each bit line in the one or more bit line groups specified by the first address information, and output the read data.