公开(公告)号：US11901020B2

公开(公告)日：2024-02-13

申请号：US17459712

申请日：2021-08-27

Applicant: KIOXIA CORPORATION

Inventor： Emiri Takada ,  Naofumi Abiko

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C16/0433 ,  G11C16/08 ,  G11C16/102 ,  G11C16/26

Abstract: [Problem] To provide a semiconductor storage device capable of reducing the load on a controller.
[Solution] According to one embodiment, a semiconductor storage device 2 includes a memory cell array 110 including a plurality of memory cell transistors MT, a plurality of word lines WL connected to gates of the respective memory cell arrays 110, a voltage generation circuit 43 generating a voltage applied to each of the word lines WL, and a sequencer 41 controlling an operation of the memory cell array 110. The sequencer 41 repeats a loop including a program operation and a verify operation multiple times in a write operation. The sequencer 41 controls an operation of the voltage generation circuit 43 so that a rate increase in a voltage applied to a non-selected word line in the verify operation of a last loop is smaller than the rate increase in the voltage applied to the non-selected word line in the verify operation of a first loop.